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Cosset-Chéneau M, Vila L, Zahnd G, Gusakova D, Pham VT, Grèzes C, Waintal X, Marty A, Jaffrès H, Attané JP. Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves. Phys Rev Lett 2021; 126:027201. [PMID: 33512209 DOI: 10.1103/physrevlett.126.027201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 11/20/2020] [Indexed: 06/12/2023]
Abstract
The spin absorption process in a ferromagnetic material depends on the spin orientation relative to the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateral spin valve, we evidence and quantify a sizable orientation dependence of the spin absorption in Co, CoFe, and NiFe. These experiments allow us to determine the spin-mixing conductance, an elusive but fundamental parameter of the spin-dependent transport. We show that the obtained values cannot be understood within a model considering only the Larmor, transverse decoherence, and spin diffusion lengths, and rather suggest that the spin-mixing conductance is actually limited by the Sharvin conductance.
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Affiliation(s)
- M Cosset-Chéneau
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - L Vila
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - G Zahnd
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - D Gusakova
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - V T Pham
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - C Grèzes
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - X Waintal
- Université Grenoble Alpes, CEA, Pheliqs, F-38054 Grenoble, France
| | - A Marty
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
| | - H Jaffrès
- Unité Mixte de Physique CNRS/Thales, University Paris-Sud and Université Paris-Saclay, 91767 Palaiseau, France
| | - J-P Attané
- Université Grenoble Alpes, CEA, CNRS, INP-G, Spintec, F-38054 Grenoble, France
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2
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Noel P, Thomas C, Fu Y, Vila L, Haas B, Jouneau PH, Gambarelli S, Meunier T, Ballet P, Attané JP. Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer. Phys Rev Lett 2018; 120:167201. [PMID: 29756906 DOI: 10.1103/physrevlett.120.167201] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2017] [Revised: 03/08/2018] [Indexed: 06/08/2023]
Abstract
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0±0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.
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Affiliation(s)
- P Noel
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
| | - C Thomas
- Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, F38054 Grenoble, France
| | - Y Fu
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
| | - L Vila
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
| | - B Haas
- CEA, INAC-MEM, 38054 Grenoble, France
| | | | - S Gambarelli
- CEA, Institut Nanosciences et Cryogénie, SyMMES F-38000 Grenoble, France
| | - T Meunier
- CNRS, Institut NEEL, 38042 Grenoble, France
| | - P Ballet
- Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, F38054 Grenoble, France
| | - J P Attané
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
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3
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Pfeiffer A, Reeve RM, Voto M, Savero-Torres W, Richter N, Vila L, Attané JP, Lopez-Diaz L, Kläui M. Geometrical control of pure spin current induced domain wall depinning. J Phys Condens Matter 2017; 29:085802. [PMID: 28001132 DOI: 10.1088/1361-648x/aa5516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We investigate the pure spin-current assisted depinning of magnetic domain walls in half ring based Py/Al lateral spin valve structures. Our optimized geometry incorporating a patterned notch in the detector electrode, directly below the Al spin conduit, provides a tailored pinning potential for a transverse domain wall and allows for a precise control over the magnetization configuration and as a result the domain wall pinning. Due to the patterned notch, we are able to study the depinning field as a function of the applied external field for certain applied current densities and observe a clear asymmetry for the two opposite field directions. Micromagnetic simulations show that this can be explained by the asymmetry of the pinning potential. By direct comparison of the calculated efficiencies for different external field and spin current directions, we are able to disentangle the different contributions from the spin transfer torque, Joule heating and the Oersted field. The observed high efficiency of the pure spin current induced spin transfer torque allows for a complete depinning of the domain wall at zero external field for a charge current density of [Formula: see text] A m-2, which is attributed to the optimal control of the position of the domain wall.
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Affiliation(s)
- A Pfeiffer
- Institut für Physik, Johannes Gutenberg-Universität Mainz, 55099 Mainz, Germany. Graduate School of Excellence Materials Science in Mainz (MAINZ), Staudinger Weg 9, 55128 Mainz, Germany
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4
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Oyarzún S, Nandy AK, Rortais F, Rojas-Sánchez JC, Dau MT, Noël P, Laczkowski P, Pouget S, Okuno H, Vila L, Vergnaud C, Beigné C, Marty A, Attané JP, Gambarelli S, George JM, Jaffrès H, Blügel S, Jamet M. Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface. Nat Commun 2016; 7:13857. [PMID: 27976747 PMCID: PMC5171917 DOI: 10.1038/ncomms13857] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2016] [Accepted: 11/04/2016] [Indexed: 12/13/2022] Open
Abstract
The spin-orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect transistor. However, the spin Hall effect in bulk germanium is too weak to produce spin currents, whereas large Rashba effect at Ge(111) surfaces covered with heavy metals could generate spin-polarized currents. The Rashba spin splitting can actually be as large as hundreds of meV. Here we show a giant spin-to-charge conversion in metallic states at the Fe/Ge(111) interface due to the Rashba coupling. We generate very large charge currents by direct spin pumping into the interface states from 20 K to room temperature. The presence of these metallic states at the Fe/Ge(111) interface is demonstrated by first-principles electronic structure calculations. By this, we demonstrate how to take advantage of the spin-orbit coupling for the development of the spin field-effect transistor.
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Affiliation(s)
- S Oyarzún
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
- Departamento de Fisica, CEDENNA, Universidad de Santiago de Chile (USACH), 9170124 Santiago, Chile
| | - A K Nandy
- Peter Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - F Rortais
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - J-C Rojas-Sánchez
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - M-T Dau
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - P Noël
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - P Laczkowski
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - S Pouget
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - H Okuno
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - L Vila
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - C Vergnaud
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - C Beigné
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - A Marty
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - J-P Attané
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - S Gambarelli
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
| | - J-M George
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - H Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France
| | - S Blügel
- Peter Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - M Jamet
- Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France
- CEA, INAC, F-38000 Grenoble, France
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5
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Lesne E, Fu Y, Oyarzun S, Rojas-Sánchez JC, Vaz DC, Naganuma H, Sicoli G, Attané JP, Jamet M, Jacquet E, George JM, Barthélémy A, Jaffrès H, Fert A, Bibes M, Vila L. Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces. Nat Mater 2016; 15:1261-1266. [PMID: 27571452 DOI: 10.1038/nmat4726] [Citation(s) in RCA: 119] [Impact Index Per Article: 14.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2016] [Accepted: 07/08/2016] [Indexed: 05/23/2023]
Abstract
The spin-orbit interaction couples the electrons' motion to their spin. As a result, a charge current running through a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronic functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronic hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism-the Rashba effect-in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES and highlight the importance of a long scattering time to achieve efficient spin-to-charge interconversion.
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Affiliation(s)
- E Lesne
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - Yu Fu
- Spintec, Institut Nanosciences et Cryogenie, Univ. Grenoble Alpes, CEA, CNRS, F-38000 Grenoble, France
| | - S Oyarzun
- Spintec, Institut Nanosciences et Cryogenie, Univ. Grenoble Alpes, CEA, CNRS, F-38000 Grenoble, France
- Departamento de Física, CEDENNA, Universidad de Santiago de Chile (USACH), Avenida Ecuador 3493, 9170124 Santiago, Chile
| | - J C Rojas-Sánchez
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - D C Vaz
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - H Naganuma
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
- Tohoku University, Department of Applied Physics, 6-6-05 Aoba, Aramaki, Aoba, Sendai 980-8579, Japan
| | - G Sicoli
- Institut Nanosciences et Cryogenie, Univ. Grenoble Alpes, CEA, F-38000 Grenoble, France
| | - J-P Attané
- Spintec, Institut Nanosciences et Cryogenie, Univ. Grenoble Alpes, CEA, CNRS, F-38000 Grenoble, France
| | - M Jamet
- Spintec, Institut Nanosciences et Cryogenie, Univ. Grenoble Alpes, CEA, CNRS, F-38000 Grenoble, France
| | - E Jacquet
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - J-M George
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - A Barthélémy
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - H Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - A Fert
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - M Bibes
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
| | - L Vila
- Spintec, Institut Nanosciences et Cryogenie, Univ. Grenoble Alpes, CEA, CNRS, F-38000 Grenoble, France
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6
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Rortais F, Oyarzún S, Bottegoni F, Rojas-Sánchez JC, Laczkowski P, Ferrari A, Vergnaud C, Ducruet C, Beigné C, Reyren N, Marty A, Attané JP, Vila L, Gambarelli S, Widiez J, Ciccacci F, Jaffrès H, George JM, Jamet M. Spin transport in p-type germanium. J Phys Condens Matter 2016; 28:165801. [PMID: 26988255 DOI: 10.1088/0953-8984/28/16/165801] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.
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Affiliation(s)
- F Rortais
- Université Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France. CEA, INAC-SPINTEC, F-38000 Grenoble, France. CNRS, INAC-SPINTEC, F-38000 Grenoble, France
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7
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Zahnd G, Vila L, Pham TV, Marty A, Laczkowski P, Savero Torres W, Beigné C, Vergnaud C, Jamet M, Attané JP. Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin valves. Nanotechnology 2016; 27:035201. [PMID: 26637104 DOI: 10.1088/0957-4484/27/3/035201] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Spin injection and detection in Co60Fe40-based all-metallic lateral spin valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to those of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin-transport model and finite element method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization.
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Affiliation(s)
- G Zahnd
- Université Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France. CEA, Institut Nanosciences et Cryogénie, SP2M, F-38000 Grenoble, France
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8
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Nguyen VD, Torres WS, Laczkowski P, Marty A, Jamet M, Beigné C, Notin L, Vila L, Attané JP. Elementary depinning processes of magnetic domain walls under fields and currents. Sci Rep 2014; 4:6509. [PMID: 25270773 PMCID: PMC4180821 DOI: 10.1038/srep06509] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2014] [Accepted: 07/24/2014] [Indexed: 11/09/2022] Open
Abstract
The probability laws associated to domain wall depinning under fields and currents have been studied in NiFe and FePt nanowires. Three basic domain wall depinning processes, associated to different potential landscapes, are found to appear identically in those systems with very different anisotropies. We show that these processes constitute the building blocks of any complex depinning mechanism. A Markovian analysis is proposed, that provides a unified picture of the depinning mechanism and an insight into the pinning potential landscape.
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Affiliation(s)
- V D Nguyen
- 1] INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France [2] Institut Néel and Université Joseph Fourier, 38042 Grenoble, France
| | - W Savero Torres
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - P Laczkowski
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - A Marty
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - M Jamet
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - C Beigné
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - L Notin
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - L Vila
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
| | - J P Attané
- INAC/CEA Grenoble and Université Joseph Fourier, 38054, Grenoble, France
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9
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Savero Torres W, Laczkowski P, Nguyen VD, Rojas Sanchez JC, Vila L, Marty A, Jamet M, Attané JP. Switchable spin-current source controlled by magnetic domain walls. Nano Lett 2014; 14:4016-4022. [PMID: 24874296 DOI: 10.1021/nl501453p] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Using nonlocal spin injection, spin-orbit coupling, or spincaloritronic effects, the manipulation of pure spin currents in nanostructures underlies the development of new spintronic devices. Here, we demonstrate the possibility to create switchable pure spin current sources, controlled by magnetic domain walls. When the domain wall is located at a given point of the magnetic circuit, a pure spin current is injected into a nonmagnetic wire. Using the reciprocal measurement configuration, we demonstrate that the proposed device can also be used as a pure spin current detector. Thanks to its simple geometry, this device can be easily implemented in spintronics applications; in particular, a single current source can be used both to induce the domain wall motion and to generate the spin signal.
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Affiliation(s)
- W Savero Torres
- INAC, CEA Grenoble , 17 avenue des Martyrs, 38054, Grenoble, France
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10
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Rojas-Sánchez JC, Reyren N, Laczkowski P, Savero W, Attané JP, Deranlot C, Jamet M, George JM, Vila L, Jaffrès H. Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces. Phys Rev Lett 2014; 112:106602. [PMID: 24679318 DOI: 10.1103/physrevlett.112.106602] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2013] [Indexed: 06/03/2023]
Abstract
Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of ℓsfPt=3.4±0.4 nm and θSHEPt=0.056±0.010 for the respective spin diffusion length and spin Hall angle for Pt. Our data and model emphasize the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.
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Affiliation(s)
- J-C Rojas-Sánchez
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France and Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - N Reyren
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - P Laczkowski
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - W Savero
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - J-P Attané
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - C Deranlot
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - M Jamet
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - J-M George
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
| | - L Vila
- INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France
| | - H Jaffrès
- Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France
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Jain A, Rojas-Sanchez JC, Cubukcu M, Peiro J, Le Breton JC, Prestat E, Vergnaud C, Louahadj L, Portemont C, Ducruet C, Baltz V, Barski A, Bayle-Guillemaud P, Vila L, Attané JP, Augendre E, Desfonds G, Gambarelli S, Jaffrès H, George JM, Jamet M. Crossover from spin accumulation into interface states to spin injection in the germanium conduction band. Phys Rev Lett 2012; 109:106603. [PMID: 23005314 DOI: 10.1103/physrevlett.109.106603] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2012] [Indexed: 06/01/2023]
Abstract
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced to a value compatible with the spin diffusion model. More interestingly, the observation in this regime of inverse spin Hall effect in germanium generated by spin pumping and the modulation of the spin signal by a gate voltage clearly demonstrate spin accumulation in the germanium conduction band.
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Affiliation(s)
- A Jain
- INAC/SP2M, Commissariat à l'Energie Atomique et aux Energies Alternatives and Université Joseph Fourier, F-38054 Grenoble, France
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12
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Nguyen VD, Vila L, Laczkowski P, Marty A, Faivre T, Attané JP. Detection of domain-wall position and magnetization reversal in nanostructures using the magnon contribution to the resistivity. Phys Rev Lett 2011; 107:136605. [PMID: 22026884 DOI: 10.1103/physrevlett.107.136605] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2011] [Indexed: 05/31/2023]
Abstract
We show that magnetization reversal detection can be achieved at room temperature using the contribution of magnons to resistivity, in 50 nm wide nanowires with either perpendicular anisotropy (FePt) or in-plane magnetization (NiFe). Even though these nanowires are made from single layers, simple magnetoresistance measurements can be used to measure switching fields, or to detect the position of a domain wall along a nanowire. Surprisingly, in NiFe nanowires, and for applied fields nearly parallel to the wire, the magnon contribution is found to dominate the classical anisotropic magnetoresistance.
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13
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Attané JP, Ravelosona D, Marty A, Samson Y, Chappert C. Thermally activated depinning of a narrow domain wall from a single defect. Phys Rev Lett 2006; 96:147204. [PMID: 16712117 DOI: 10.1103/physrevlett.96.147204] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2005] [Indexed: 05/09/2023]
Abstract
We describe the field induced depinning process of a magnetic domain wall (DW) from a single bidimensional nanometric defect. The DW propagates in a wire lithographed on a film with strong perpendicular anisotropy. We observe a statistical distribution of the relaxation time consistent with a Néel-Brown picture of magnetization reversal. This indicates that the nanometric DW can be considered as an ideal monodomain particle switching over a single energy barrier. Such a stochastic character of DW depinning has to be taken into account for spintronic applications.
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Affiliation(s)
- J P Attané
- DRFMC/CEA Grenoble, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
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14
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Attané JP, Samson Y, Marty A, Toussaint JC, Dubois G, Mougin A, Jamet JP. Magnetic domain wall propagation unto the percolation threshold across a pseudorectangular disordered lattice. Phys Rev Lett 2004; 93:257203. [PMID: 15697933 DOI: 10.1103/physrevlett.93.257203] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2004] [Indexed: 05/24/2023]
Abstract
The reversal process of thin FePt/Pt(001) layers with perpendicular magnetization was observed by magnetic imaging techniques. Reversal occurs through domain wall propagation across a strongly disordered rectangular lattice of linear anisotropy defects. Micromagnetic simulations of domain wall pinning allowed deriving an analytical model of the reversal process unto percolation threshold. Quantitative agreement is found between the calculated and experimental fractal dimension of the reversed domain.
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Affiliation(s)
- J P Attané
- DRFMC/CEA Grenoble, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
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15
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Danneau R, Warin P, Attané JP, Petej I, Beigné C, Fermon C, Klein O, Marty A, Ott F, Samson Y, Viret M. Individual domain wall resistance in submicron ferromagnetic structures. Phys Rev Lett 2002; 88:157201. [PMID: 11955215 DOI: 10.1103/physrevlett.88.157201] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2001] [Indexed: 05/23/2023]
Abstract
The resistance generated by individual domain walls is measured in a FePd nanostructure. Combining transport and magnetic imaging measurements, the intrinsic domain wall resistance is quantified. It is found positive and of a magnitude consistent with that predicted by models based on spin scattering effects within the walls. This magnetoresistance at a nanometer scale allows a direct counting of the number of walls inside the nanostructure. The effect is then used to measure changes in the magnetic configuration of submicron stripes under application of a magnetic field.
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Affiliation(s)
- R Danneau
- Service de Physique de l'Etat Condensé, CEA Orme des Merisiers, F-91191 Gif-Sur-Yvette, France
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