Using half-metallic manganite interfaces to reveal insights into spintronics

A half-metal has been defined as a material with propagating electron states at the Fermi energy only for one of the two possible spin projections, and as such has been promoted as an interesting research direction for spin electronics. This review details recent advances on manganite thin film research within the field of spintronics, before presenting the structural, electronic and spin-polarized solid-state tunnelling transport studies that we have performed on heterostructures involving La(2/3)Sr(1/3)MnO(3) thin films separated by SrTiO(3) barriers. These experiments demonstrate that, with a polarization of spin [Formula: see text] electrons at the Fermi level that can reach 99%, the La(2/3)Sr(1/3)MnO(3)/SrTiO(3) interface for all practical purposes exhibits half-metallic behaviour. We offer insight into the electronic structure of the interface, including the electronic symmetry of any remaining spin [Formula: see text] states at the Fermi level. Finally, we present experiments that use the experimental half-metallic property of manganites as tools to reveal novel features of spintronics.

Co-doped (La, Sr)TiO(3-delta) : a high Curie temperature diluted magnetic system with large spin polarization

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La, Sr)TiO(3-delta) (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.

Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La(2/3)Sr(1/3)MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La(2/3)Sr(1/3)MnO3 including the energy gap delta between the Fermi level and the bottom of the t(2g) minority-spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.

Conductivity of underdoped YBa(2)Cu(3)O(7-delta): evidence for incoherent pair correlations in the pseudogap regime

A two-channel scenario for the conductivity of underdoped YBa 2Cu 3O (7-delta) is proposed. One is the single-particle excitations channel, which dominates in the optimally doped material, whose resistivity is linear as a function of temperature. The other one gives a contribution which merges the 3D Aslamazov-Larkin fluctuation conductivity at low temperature and obeys a power law at high temperature, depending on two superconductive parameters (T(c) and the zero temperature coherence length xi(c0)) and an energy scale Delta(*). This allows one to address the nature of the pseudogap in favor of incoherent pairing.

Role of metal-oxide interface in determining the spin polarization of magnetic tunnel junctions

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal-barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.