Defining the Genetic Landscape of Congenital Mirror Movements in 80 Affected Individuals

BACKGROUND

Congenital mirror movements (CMM) is a rare neurodevelopmental disorder characterized by involuntary movements from one side of the body that mirror voluntary movements on the opposite side. To date, five genes have been associated with CMM, namely DCC, RAD51, NTN1, ARHGEF7, and DNAL4.

OBJECTIVE

The aim of this study is to characterize the genetic landscape of CMM in a large group of 80 affected individuals.

METHODS

We screened 80 individuals with CMM from 43 families for pathogenic variants in CMM genes. In large CMM families, we tested for presence of pathogenic variants in multiple affected and unaffected individuals. In addition, we evaluated the impact of three missense DCC variants on binding between DCC and Netrin-1 in vitro.

RESULTS

Causal pathogenic/likely pathogenic variants were found in 35% of probands overall, and 70% with familial CMM. The most common causal gene was DCC, responsible for 28% of CMM probands and 80% of solved cases. RAD51, NTN1, and ARHGEF7 were rare causes of CMM, responsible for 2% each. Penetrance of CMM in DCC pathogenic variant carriers was 68% and higher in males than females (74% vs. 54%). The three tested missense variants (p.Ile164Thr; p.Asn176Ser; and p.Arg1343His) bind Netrin-1 similarly to wild type DCC.

CONCLUSIONS

A genetic etiology can be identified in one third of CMM individuals, with DCC being the most common gene involved. Two thirds of CMM individuals were unsolved, highlighting that CMM is genetically heterogeneous and other CMM genes are yet to be discovered. © 2024 The Authors. Movement Disorders published by Wiley Periodicals LLC on behalf of International Parkinson and Movement Disorder Society.

Genetics of mirror movements identifies a multifunctional complex required for Netrin-1 guidance and lateralization of motor control

Mirror movements (MM) disorder is characterized by involuntary movements on one side of the body that mirror intentional movements on the opposite side. We performed genetic characterization of a family with autosomal dominant MM and identified ARHGEF7, a RhoGEF, as a candidate MM gene. We found that Arhgef7 and its partner Git1 bind directly to Dcc. Dcc is the receptor for Netrin-1, an axon guidance cue that attracts commissural axons to the midline, promoting the midline crossing of axon tracts. We show that Arhgef7 and Git1 are required for Netrin-1-mediated axon guidance and act as a multifunctional effector complex. Arhgef7/Git1 activates Rac1 and Cdc42 and inhibits Arf1 downstream of Netrin-1. Furthermore, Arhgef7/Git1, via Arf1, mediates the Netrin-1-induced increase in cell surface Dcc. Mice heterozygous for Arhgef7 have defects in commissural axon trajectories and increased symmetrical paw placements during skilled walking, a MM-like phenotype. Thus, we have delineated how ARHGEF7 mutation causes MM.

Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing

The present work aims to develop ultra-wide bandwidth air-coupled capacitive micromachined ultrasonic transducers (CMUTs) for binary gas mixture analysis. The detection principle is based on time-of-flight (ToF) measurements, in order to monitor gas ultrasound velocity variations. To perform such measurements, CMUTs were especially designed to work out of resonance mode, like a microphone. The chosen membrane size is 32 × 32 µm² and gap height is 250 nm. The resonance frequency and collapse voltage were found at 8 MHz and 58 V respectively. As mentioned, the CMUTs were exploited in quasi-static operating mode, in a very low frequency band, from 1 MHz to 1.5 MHz frequencies. The transducer impulse response was characterised, and a -6 dB relative fractional frequency bandwidth (FBW) higher than 100% was measured, enabling to use CMUT for the targeted application. Additionally, a measuring cell has been designed to hold the fabricated CMUT emitter and receiver prototypes facing each other. The volume inside the cell was kept lower than 3 mL and the surface of emitter/receiver was 1.6 × 8 mm². To validate the general principle of the proposed technique, two binary gas mixtures of CO₂/N₂ and H₂/N₂, with varying concentrations, have been tested. The results are very promising with a measured limit of detection (LOD) of 0.3% for CO₂ in N₂ and 0.15% for H₂ in N₂.

Boc Acts via Numb as a Shh-Dependent Endocytic Platform for Ptch1 Internalization and Shh-Mediated Axon Guidance

During development, Shh attracts commissural axons toward the floor plate through a non-canonical, transcription-independent signaling pathway that requires the receptor Boc. Here, we find that Shh induces Boc internalization into early endosomes and that endocytosis is required for Shh-mediated growth-cone turning. Numb, an endocytic adaptor, binds to Boc and is required for Boc internalization, Shh-mediated growth-cone turning in vitro, and commissural axon guidance in vivo. Similar to Boc, Ptch1 is also internalized by Shh in a Numb-dependent manner; however, the binding of Shh to Ptch1 alone is not sufficient to induce Ptch1 internalization nor growth-cone turning. Therefore, the binding of Shh to Boc is required for Ptch1 internalization and growth-cone turning. Our data support a model where Boc endocytosis via Numb is required for Ptch1 internalization and Shh signaling in axon guidance. Thus, Boc acts as a Shh-dependent endocytic platform gating Ptch1 internalization and Shh signaling.

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is mesoporous (diameters in the range of 5 to 50 nm) with an increase of the 'chevron shaped' pore density with depth. In the case of the C face, a columnar morphology is observed, and the etch rate is twice greater than for the one for the Si face. We've also observed the evolution of the potential for a fixed applied current density. Finally, some wafer defects induced by polishing are clearly revealed at the sample surfaces even for very short etching times.