Highly Luminescent and Anti-Photobleaching Core-Shell Structure of Mesoporous Silica and Phosphatidylcholine Modified Superparamagnetic Iron Oxide Nanoparticles

Highly fluorescent magnetic nanoparticles (Eu(TTA)₃(P(Oct)₃)₃@mSiO₂@SPION) [europium (III) chloride hexahydrate = Eu; 4,4,4-trifluoro-1-(2-thienyl)-1,3-butanedione = TTA; trioctylphosphine = (P(Oct)₃); mesoporous silica = mSiO₂; superparamagnetic iron oxide nanoparticle = SPION] were developed as a dual-functional imaging agent. The hierarchical structure was composed of a magnetic core and mesoporous silica shell was constructed using a cationic surfactant template after coating with phosphatidylcholine of oleic acid coated SPION. Afterward, the surface and cavities of mSiO₂@SPION were modified with 3-(trimethoxysilyl) propyl methacrylate (TMSPMA) as a silane coupling agent to introduce methacrylate groups. Eu(TTA)₃(P(Oct)₃)₃ molecules are penetrated, located and bonded covalently inside of the cavities/mesopores of mSiO₂, it shows extremely stable anti-photobleaching properties. The emission spectra of Eu(TTA)₃(P(Oct)₃)₃@mSiO₂@SPION indicated typical hypersensitivity transition ⁵D₀→⁷F₂ at 621 nm. The concentration of Eu(TTA)₃(P(Oct)₃)₃@mSiO₂@SPION was varied between 10 and 500 μL/mL to evaluate the cytotoxicity with NCI-H460 (H460) cells using MTT (3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) assay. In addition, the presence of a strong red-emitting Eu(TTA)₃(P(Oct)₃)₃@mSiO₂@SPION in the cytoplasm was observed by fluorescence microscopy. Those results that it can be a potential candidate for dual-functional contrast agent and PL nanomaterials for fabricating the diagnostic kits to amplify the low signal.

Effects of surface chemical structure on the mechanical properties of Si(1-x)Ge(x) nanowires

The Young's modulus and fracture strength of Si(1-x)Ge(x) nanowires (NWs) as a function of Ge concentration were measured from tensile stress measurements. The Young's modulus of the NWs decreased linearly with increasing Ge content. No evidence was found for a linear relationship between the fracture strength of the NWs and Ge content, which is closely related to the quantity of interstitial Ge atoms contained in the wire. However, by removing some of the interstitial Ge atoms through rapid thermal annealing, a linear relationship could be produced. The discrepancy in the reported strength of Si and Ge NWs between calculated and experimented results could be related to SiO(2-x)/Si interfacial defects that are found in Si(1-x)Ge(x) NWs. It was also possible to significantly decrease the number of interfacial defects in the NWs by incorporating a surface passivated Al2O3 layer, which resulted in a substantial increase in fracture strength.