Characterization and enhanced field emission properties of IrO2-coated carbon nanotube bundle arrays

Low operating electric field and stable emission current have been achieved in IrO(2) nanocrystal-coated carbon nanotube bundle arrays (CNTBAs). Patterned vertically aligned CNTBAs were synthesized using thermal chemical vapor deposition followed by the deposition of IrO(2) nanocrystals by reactive radio-frequency magnetron sputtering using an Ir target. The structural and spectroscopic properties were characterized by field emission scanning and transmission electron microscopy, and Raman spectroscopy. The current density versus electric field measurements yielded a low turn-on field of 0.7 V microm(-1) at a current density of 0.1 microA cm(-2), a low threshold field of 2.3 V microm(-1) at a current density of 1 mA cm(-2) and a high field enhancement factor of 1 x 10(4) for the IrO(2)-coated CNTBAs. Long-term stability was also demonstrated. The enhancement of field emission characteristics is attributed to the combined effects of the geometrical structure of the IrO(2)-coated CNTBAs, and the natural conducting and enhanced resistance to oxidation properties of IrO(2).

Growth and characterization of V-shaped IrO(2) nanowedges via metal-organic vapor deposition

We report in detail the synthesis and characterization of V-shaped IrO(2) nanowedges (NWs) with an angle of 110° between the two arms. The NWs were grown on top of rutile (R) phase TiO(2) nanorods (NRs) sitting on a sapphire (SA)(100) substrate via metal-organic chemical vapor deposition (MOCVD) by using (C(6)H(7))(C(8)H(12))Ir and titanium-tetraisopropoxide (TTIP, Ti[OCH(CH(3))(2)](4)) as the source reagents. The surface morphology, structural, and spectroscopic properties of the as-deposited nanocrystals (NCs) were characterized by field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), micro-Raman spectroscopy, transmission electron microscopy (TEM), and selected-area electron diffractometry (SAED). The FESEM images and XRD patterns indicated growth of V-shaped IrO(2)(101) NWs on top of R-TiO(2) NRs. The Raman spectrum showed the nanosize induced redshift and peak broadening of the IrO(2) and rutile phase of TiO(2) signatures with respect to that of the bulk counterparts. TEM and SAED characterizations of IrO(2) NCs showed that the nanowedges were crystalline IrO(2) with a twin plane of (101) and twin direction of [Formula: see text] at the V-junction. The probable mechanisms for the formation of well-aligned IrO(2) NWs are discussed.

Growth and characterization of well-aligned densely-packed rutile TiO(2) nanocrystals on sapphire substrates via metal-organic chemical vapor deposition

Well-aligned densely-packed rutile TiO(2) nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC(3)H(7))(4)) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of ∼33° from the normal to substrates. TEM and SAED measurements showed that the TiO(2) NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO(2) NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO(2) NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed.

Optical characterization of a Cd(0.85)Mg(0.15)Se mixed crystal

We present an optical characterization of a Bridgman-grown wurtzite-type Cd(0.85)Mg(0.15)Se mixed crystal in the near-band-edge interband transitions using temperature-dependent contactless electroreflectance (CER) and photoreflectance (PR) in the temperature range 15-400 K. The interband excitonic transitions A and C originating from the band edge and spin-orbital splitting critical points of the sample, respectively, have been observed in the CER/PR spectra. The transition energies and broadening function of the excitonic features are determined via a lineshape fit to the CER/PR spectra. The parameters that describe the temperature dependence of the transition energies of excitons A and C, and the broadening function of exciton A, are evaluated and discussed.

Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots

The surface photovoltage (SPV) spectra of a series of vertically stacked self-organized InAs/GaAs quantum dot (QD)-based laser structures with different spacer layer (SL) thickness were obtained as a function of temperature (77 K </= T </= 300 K). A decrease of the compressive stress for thinner SL samples arising from coherent relaxation enables us to designate the effect of material intermixing as the most probable mechanism of the energetic blueshift of the observed structures. The turnaround characteristic of the temperature-dependent spectral intensity shows that the reduced SPV signal at higher temperature is limited by the carrier scattering and at lower temperature it is governed by the magnitude of built-in electric field and the escape efficiency of the photogenerated carriers. The dot states to be blueshifted by material intermixing are expected to have higher escape rate for carriers out of QDs, thus resulting in lower measurable temperature for the detected SPV signal. The relatively higher signal at low temperature for the 10 nm SL sample provides a direct evidence of the tunneling process of carriers in the stacked QD layers.

Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells

The effects of growth interruption times combined with Sb exposure of GaAsSb/GaAs multiple quantum wells (MQWs) have been investigated by using phototransmittance (PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltage spectroscopy (WMSPS). The features originated from different portions of the samples, including interband transitions of MQWs, interfaces and GaAs, are observed and identified through a detailed comparison of the obtained spectra and theoretical calculation. A red-shift of the interband transitions and a broader lineshape of the fundamental transition are observed from samples grown under Sb exposure compared to the reference sample grown without interruption. The results can be interpreted in terms of both increases in Sb content and mixing of Sb in the GaAs interface layers. An additional feature has been observed below the GaAs region in the samples with Sb treatment. The probable origin of this additional feature is discussed.