Murdin BN, Litvinenko K, Clarke DG, Pidgeon CR, Murzyn P, Phillips PJ, Carder D, Berden G, Redlich B, van der Meer AFG, Clowes S, Harris JJ, Cohen LF, Ashley T, Buckle L. Spin relaxation by transient monopolar and bipolar optical orientation.
Phys Rev Lett 2006;
96:096603. [PMID:
16606292 DOI:
10.1103/physrevlett.96.096603]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2004] [Indexed: 05/08/2023]
Abstract
We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.
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