Correction to "A Templating Approach to Controlling the Growth of Coevaporated Halide Perovskites"

[This corrects the article DOI: 10.1021/acsenergylett.3c01368.].

Cation-Disorder Engineering Promotes Efficient Charge-Carrier Transport in AgBiS2 Nanocrystal Films

Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities, and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored as a function of Ag and Bi cation-ordering, which can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation-disorder engineering results in a sixfold increase in the charge-carrier mobility, reaching ≈2.7 cm2 V-1 s-1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localization, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localization of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.

A Templating Approach to Controlling the Growth of Coevaporated Halide Perovskites

Metal halide perovskite semiconductors have shown significant potential for use in photovoltaic (PV) devices. While fabrication of perovskite thin films can be achieved through a variety of techniques, thermal vapor deposition is particularly promising, allowing for high-throughput fabrication. However, the ability to control the nucleation and growth of these materials, particularly at the charge-transport layer/perovskite interface, is critical to unlocking the full potential of vapor-deposited perovskite PV. In this study, we explore the use of a templating layer to control the growth of coevaporated perovskite films and find that such templating leads to highly oriented films with identical morphology, crystal structure, and optoelectronic properties independent of the underlying layers. Solar cells incorporating templated FA0.9Cs0.1PbI3-xClx show marked improvements with steady-state power conversion efficiency over 19.8%. Our findings provide a straightforward and reproducible method of controlling the charge-transport layer/coevaporated perovskite interface, further clearing the path toward large-scale fabrication of efficient PV devices.

Chloride-Based Additive Engineering For Efficient and Stable Wide-Bandgap Perovskite Solar Cells

Metal halide perovskite-based tandem solar cells are promising to achieve power conversion efficiency beyond the theoretical limit of their single-junction counterparts. However, overcoming the significant open-circuit voltage deficit present in wide-bandgap perovskite solar cells remains a major hurdle for realising efficient and stable perovskite tandem cells. Here, we report a holistic approach to overcoming challenges in 1.8 eV perovskites solar cells by engineering the perovskite crystallisation pathway by means of chloride additives. In conjunction with employing a self-assembled monolayer as the hole transport layer, we achieved an open-circuit voltage of 1.25 V and a power conversion efficiency of 17.0%. We elucidate the key role of methylammonium chloride addition in facilitating the growth of a chloride-rich intermediate phase that directs crystallisation of the desired cubic perovskite phase, and induce more effective halide homogenisation. The as-formed 1.8 eV perovskite demonstrates suppressed halide segregation and improved optoelectronic properties. This article is protected by copyright. All rights reserved.

Solvent-Free Method for Defect Reduction and Improved Performance of p-i-n Vapor-Deposited Perovskite Solar Cells

As perovskite-based photovoltaics near commercialization, it is imperative to develop industrial-scale defect-passivation techniques. Vapor deposition is a solvent-free fabrication technique that is widely implemented in industry and can be used to fabricate metal-halide perovskite thin films. We demonstrate markably improved growth and optoelectronic properties for vapor-deposited [CH(NH₂)₂]_0.83Cs_0.17PbI₃ perovskite solar cells by partially substituting PbI₂ for PbCl₂ as the inorganic precursor. We find the partial substitution of PbI₂ for PbCl₂ enhances photoluminescence lifetimes from 5.6 ns to over 100 ns, photoluminescence quantum yields by more than an order of magnitude, and charge-carrier mobility from 46 cm²/(V s) to 56 cm²/(V s). This results in improved solar-cell power conversion efficiency, from 16.4% to 19.3% for the devices employing perovskite films deposited with 20% substitution of PbI₂ for PbCl₂. Our method presents a scalable, dry, and solvent-free route to reducing nonradiative recombination centers and hence improving the performance of vapor-deposited metal-halide perovskite solar cells.