Pusep YA, Tavares BGM, Tito MA, dos Santos LF, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices.
J Phys Condens Matter 2015;
27:245601. [PMID:
26000711 DOI:
10.1088/0953-8984/27/24/245601]
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Abstract
The characteristic energies, occupancies and polarizations of the minibands formed by the Γ-Γ and Γ-Xz interlayer electon tunnelings in the InGaAs/InP superlattices are studied in the regime of the integer quantum Hall effect by polarization resolved photoluminescence. Accordingly, the magnetic field induced shrinkage of the interminiband gap, predicted by the theory, and as a consequence, the redistribution of charge over the superlattice minibands and the depolarization of the quantum Hall electron states are observed at odd filling factors. The response of the electrons residing in the InGaAs/InP superlattice minibands to the magnetic field is found very similar to the corresponding response of the electrons confined in the symmetric and anti-symmetric two-dimensional minibands of GaAs/AlGaAs double quantum wells. The presented results are evidence of the formation of the correlated states in multi-component electron systems formed in semiconductor multiple layers at odd filling factors.
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