Knelangen M, Hanke M, Luna E, Schrottke L, Brandt O, Trampert A. Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.
Nanotechnology 2011;
22:365703. [PMID:
21836335 DOI:
10.1088/0957-4484/22/36/365703]
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Abstract
Vertical stacks of (In, Ga)N insertions in GaN nanowires are grown by molecular beam epitaxy. The chemical composition and strain within the structure are probed by a combination of high-resolution x-ray diffraction, transmission electron microscopy, and geometrical phase analysis. The (In, Ga)N insertions are coherently strained. Finite-element simulations strongly support an ineffective [corrected] strain relaxation despite [corrected] the nanowire geometry, leading to high-quality (In, Ga)N/GaN nanowire heterostructures. An intense green photoluminescence emission is observed and attributed to an inter-well transition between the stacked (In, Ga)N insertions.
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