Kolpak AM, Walker FJ, Reiner JW, Segal Y, Su D, Sawicki MS, Broadbridge CC, Zhang Z, Zhu Y, Ahn CH, Ismail-Beigi S. Interface-induced polarization and inhibition of ferroelectricity in epitaxial SrTiO₃/Si.
Phys Rev Lett 2010;
105:217601. [PMID:
21231354 DOI:
10.1103/physrevlett.105.217601]
[Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2010] [Indexed: 05/30/2023]
Abstract
We use SrTiO₃/Si as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices.
Collapse