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Miniussi E, Bernard C, Cun HY, Probst B, Leuenberger D, Mette G, Zabka WD, Weinl M, Haluska M, Schreck M, Osterwalder J, Greber T. Fermi surface map of large-scale single-orientation graphene on SiO 2. J Phys Condens Matter 2017; 29:475001. [PMID: 28949299 DOI: 10.1088/1361-648x/aa8f27] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Large scale tetraoctylammonium-assisted electrochemical transfer of graphene grown on single-crystalline Ir(1 1 1) films by chemical vapour deposition is reported. The transferred samples are characterized in air with optical microscopy, Raman spectroscopy and four point transport measurements, providing the sheet resistance and the Hall carrier concentration. In vacuum we apply low energy electron diffraction and photoelectron spectroscopy that indicate transferred large-scale single orientation graphene. Angular resolved photoemission reveals a Fermi surface and a Dirac point energy which are consistent with charge neutral graphene.
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Affiliation(s)
- E Miniussi
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
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Hemmi A, Bernard C, Cun H, Roth S, Klöckner M, Kälin T, Weinl M, Gsell S, Schreck M, Osterwalder J, Greber T. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers. Rev Sci Instrum 2014; 85:035101. [PMID: 24689614 DOI: 10.1063/1.4866648] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.
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Affiliation(s)
- A Hemmi
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - C Bernard
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - H Cun
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - S Roth
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - M Klöckner
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - T Kälin
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - M Weinl
- Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
| | - S Gsell
- Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
| | - M Schreck
- Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
| | - J Osterwalder
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
| | - T Greber
- Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
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