Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Red, green, and blue light In_xGa_1-xN multiple quantum wells have been grown on GaN/γ-LiAlO₂ microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In_xGa_1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In_xGa_1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In_xGa_1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

Timing advances of commercial divalent-ion co-doped LYSO:Ce and SiPMs in sub-100 ps time-of-flight positron emission tomography

Objective.Together with novel photodetector technologies and emerging electronic front-end designs, scintillator material research is one of the key aspects to obtain ultra-fast timing in time-of-flight positron emission tomography (TOF-PET). In the late 1990s, Cerium-doped lutetium-yttrium oxyorthosilicate (LYSO:Ce) has been established as the state-of-the-art PET scintillator due to its fast decay time, high light yield and high stopping power. It has been shown that co-doping with divalent ions, such as Ca²⁺and Mg²⁺, is beneficial for its scintillation characteristics and timing performance. Therefore, this work aims to identify a fast scintillation material to combine it with novel photosensor technologies to push the state of the art in TOF-PET.Approach.This study evaluates commercially available LYSO:Ce,Ca and LYSO:Ce,Mg samples manufactured by Taiwan Applied Crystal Co., LTD regarding their rise and decay times as well as their coincidence time resolution (CTR) with both ultra-fast high-frequency (HF) readout and commercially available readout electronics, i.e. the TOFPET2 ASIC.Main results.The co-doped samples exhibit state-of-the-art rise times of on average 60 ps and effective decay times of on average 35 ns. Using the latest technological improvements made on NUV-MT SiPMs by Fondazione Bruno Kessler and Broadcom Inc., a 3 × 3 × 19 mm³LYSO:Ce,Ca crystal achieves a CTR of 95 ps (FWHM) with ultra-fast HF readout and 157 ps (FWHM) with the system-applicable TOFPET2 ASIC. Evaluating the timing limits of the scintillation material, we even show a CTR of 56 ps (FWHM) for small 2 × 2 × 3 mm³pixels. A complete overview of the timing performance obtained with different coatings (Teflon, BaSO₄) and different crystal sizes coupled to standard Broadcom AFBR-S4N33C013 SiPMs will be presented and discussed.Significance.This work thoroughly evaluates commercially available co-doped LYSO:Ce crystals and, in combination with novel NUV-MT SiPMs, shows a TOF performance that significantly exceeds the current state of the art.

Substrate-Induced Anisotropic Growth of CuAlO2 Platelets in a Liquid-Solid Reaction

This study reports a simplified method to grow CuAlO₂ crystals of submillimeter sizes with a highly anisotropic shape of a platelet. The solid-state reaction of forming CuAlO₂ at ca. 1373 K in the first stage of the conventional flux method is no longer required. The CuAlO₂ platelets nucleated directly onto the (0001)_sapphire surface in a melt of Cu₂O saturated with Al₂O₃ at 1473 K. The excess flux was mostly removed by the capped alumina plate on cooling with a limited amount of residue which can be leached afterward. The CuAlO₂ platelets all have a 3R crystal structure with no line and planar defects observed by TEM. The CuAlO₂ crystals emit a luminescence at 3.49 eV associated with resonant Raman effect resulted from a band-to-band transition in room-temperature PL measurement. The facile fabrication method for growing highly anisotropic CuAlO₂ crystals paves the way for their practical application in photoelectrochemical devices.

A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications

The development of modern cutting-edge technology relies heavily on the huge success and advancement of nanotechnology, in which nanomaterials and nanostructures provide the indispensable material cornerstone. Owing to their nanoscale dimensions with possible quantum limit, nanomaterials and nanostructures possess a high surface-to-volume ratio, rich surface/interface effects, and distinct physical and chemical properties compared with their bulk counterparts, leading to the remarkably expanded horizons of their applications. Depending on their degree of spatial quantization, low-dimensional nanomaterials are generally categorized into nanoparticles (0D); nanorods, nanowires, and nanobelts (1D); and atomically thin layered materials (2D). This review article provides a comprehensive guide to low-dimensional nanomaterials and nanostructures. It begins with the classification of nanomaterials, followed by an inclusive account of nanofabrication and characterization. Both top-down and bottom-up fabrication approaches are discussed in detail. Next, various significant applications of low-dimensional nanomaterials are discussed, such as photonics, sensors, catalysis, energy storage, diverse coatings, and various bioapplications. This article would serve as a quick and facile guide for scientists and engineers working in the field of nanotechnology and nanomaterials.

The Singularity Paramagnetic Peak of Bi0.3Sb1.7Te3 with p-type Surface State

The magnetization measurement was performed in the Bi_0.3Sb_1.7Te₃ single crystal. The magnetic susceptibility revealed a paramagnetic peak independent of the experimental temperature variation. It is speculated to be originated from the free-aligned spin texture at the Dirac point. The ARPES reveals that the Fermi level lies below the Dirac point. The Fermi wavevector extracted from the de Haas-van Alphen oscillation is consistent with the energy dispersion in the ARPES. Our experimental results support that the observed paramagnetic peak in the susceptibility curve does not originate from the free-aligned spin texture at the Dirac point.

The Magnetic Susceptibility Bifurcation in the Ni-Doped Sb2Te3 Topological Insulator with Antiferromagnetic Order Accompanied by Weak Ferromagnetic Alignment

The magnetic susceptibility reveals a discontinuity at Néel temperature and a hysteresis loop with low coercive field was observed below Néel temperature. The magnetic susceptibility of zero field cool and field cool processes coincide at a temperature above the discontinuity, and they split at temperature blow the discontinuity. The magnetic susceptibility splitting is larger at lower external magnetic fields. No more magnetic susceptibility splitting was observed at a magnetic field above 7000 Oe which is consistent with the magnetic anisotropy energy. Our study supports that these magnetic susceptibility characteristics originate from an antiferromagnetic order accompanied by weak ferromagnetism.

Rational design of hetero-dimensional C-ZnO/MoS2 nanocomposite anchored on 3D mesoporous carbon framework towards synergistically enhanced stability and efficient visible-light-driven photocatalytic activity

For efficient solar energy harvesting, various engineering strategies to strengthen visible-light responsivity of ZnO photocatalyst is under intensive investigation. In this work, a new ternary C-ZnO/MoS₂/mesoporous carbon nanocomposite was successfully prepared by a two-step solution-processed synthesis protocol. The ternary composite exhibits a well-interconnected 3D mesoporous microstructure assembled by carbon nanosheets, which is loaded with quasi 0D ZnO nanoparticles and 2D MoS₂ nanosheets. The carbonaceous nanocomposites show enhanced visible-light-driven photocatalytic performance and high photo-corrosion resistance. The incorporation of carbon in the hybrid design has manifold benefits that drastically promotes the photoactivity and photostability. The significant enhancement in photodegradation activity of the hybrid catalysts can be ascribed to a few positive synergistic effects, such as increased surface area and active reaction sites, boosted surface charge utilization efficiency, and band-gap lowering. The high porosity of the distinct microstructure raises the dye adsorption within the material. Tailored interface/surface properties enable more effective mass transport and higher separation efficiency of photo-generated carriers. The modulated electronic structure leads to the narrowing of the ZnO optical bandgap. Meanwhile, coupling with carbon prevents ZnO from photo-corrosion. Our approach highlights the roles of carbon as structure directing and stabilizing agents as well as heteroatom in defect engineering for wide band-gap oxide materials. The rational material design of multivariate mixed-dimensional architecture also provides guiding insight for the advancement of heterogeneous photocatalyst materials with superior performance and durability. The presented engineering strategy would be a promising method for the preparation of nanomaterials supported on 3D carbon network with high porosity and visible-light-driven photocatalytic performance.

2D CTAB-MoSe2 Nanosheets and 0D MoSe2 Quantum Dots: Facile Top-Down Preparations and Their Peroxidase-Like Catalytic Activity for Colorimetric Detection of Hydrogen Peroxide

We report the facile and economic preparation of two-dimensional (2D) and 0D MoSe2 nanostructures based on systematic and non-toxic top-down strategies. We demonstrate the intrinsic peroxidase-like activity of these MoSe2 nanostructures. The catalytic processes begin with facilitated decomposition of H2O2 by using MoSe2 nanostructures as peroxidase mimetics. In turn, a large amount of generated radicals oxidizes 3,3,5,5-tetramethylbenzidine (TMB) to produce a visible color reaction. The enzymatic kinetics of our MoSe2 nanostructures complies with typical Michaelis-Menten theory. Catalytic kinetics study reveals a ping-pong mechanism. Moreover, the primary radical responsible for the oxidation of TMB was identified to be Ȯ2- by active species-trapping experiments. Based on the peroxidase mimicking property, we developed a new colorimetric method for H2O2 detection by using 2D and 0D MoSe2 nanostructures. It is shown that the colorimetric sensing capability of our MoSe2 catalysts is comparable to other 2D materials-based colorimetric platforms. For instance, the linear range of H2O2 detection is between 10 and 250 μM by using 2D functionalized MoSe2 nanosheets as an artificial enzyme. Our work develops a systematic approach to use 2D materials to construct novel enzyme-free mimetic for a visual assay of H2O2, which has promising prospects in medical diagnosis and food security monitoring.

Observation of Landau Level-Dependent Aharonov-Bohm-Like Oscillations in a Topological Insulator

We study the quantum oscillations in the BiSbTe₃ topological insulator. In addition to the Shubnikov-de Haas (SdH) oscillation, the Aharonov-Bohm-like (ABL) oscillations are also observed. The ABL oscillation period is constant at each Landau level (LL) which is determined from the SdH oscillation. The shorter ABL oscillation periods are observed at lower LLs. The oscillation period is proportional to the square root of the LL at temperatures. The ratio of the ABL oscillation period to the effective mass is weak LL dependence. The LL-dependent ABL oscillation might originate from the LL-dependent effective mass.

Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1-xMgxO multiple quantum wells grown on LiGaO2 substrate

The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumably attributed to the enhanced confinement effect of a one-dimension confinement structure formed by the intersection of quantum well and basal stacking fault. The polarization of laser beam also has an influence on the DOP. It is assumed that the luminescence polarization should be affected not only by the in-plane strains but also the microstructural defects, which do modify the electronic band structure.

Facile Bottom-up Preparation of WS2-Based Water-Soluble Quantum Dots as Luminescent Probes for Hydrogen Peroxide and Glucose

Photoluminescent zero-dimensional (0D) quantum dots (QDs) derived from transition metal dichalcogenides, particularly molybdenum disulfide, are presently in the spotlight for their advantageous characteristics for optoelectronics, imaging, and sensors. Nevertheless, up to now, little work has been done to synthesize and explore photoluminescent 0D WS2 QDs, especially by a bottom-up strategy without using usual toxic organic solvents. In this work, we report a facile bottom-up strategy to synthesize high-quality water-soluble tungsten disulfide (WS2) QDs through hydrothermal reaction by using sodium tungstate dihydrate and L-cysteine as W and S sources. Besides, hybrid carbon quantum dots/WS2 QDs were further prepared based on this method. Physicochemical and structural analysis of QD hybrid indicated that the graphitic carbon quantum dots with diameters about 5 nm were held onto WS2 QDs via electrostatic attraction forces. The resultant QDs show good water solubility and stable photoluminescence (PL). The excitation-dependent PL can be attributed to the polydispersity of the synthesized QDs. We found that the PL was stable under continuous irradiation of UV light but can be quenched in the presence of hydrogen peroxide (H2O2). The obtained WS2-based QDs were thus adopted as an electrodeless luminescent probe for H2O2 and for enzymatic sensing of glucose. The hybrid QDs were shown to have a more sensitive LOD in the case of glucose sensing. The Raman study implied that H2O2 causes the partial oxidation of QDs, which may lead to oxidation-induced quenching. Overall, the presented strategy provides a general guideline for facile and low-cost synthesis of other water-soluble layered material QDs and relevant hybrids in large quantity. These WS2-based high-quality water-soluble QDs should be promising for a wide range of applications in optoelectronics, environmental monitoring, medical imaging, and photocatalysis.

Fracture Resistance of Monolithic Zirconia Crowns in Implant Prostheses in Patients with Bruxism

The aim of this study is to determine the minimum required thickness of a monolithic zirconia crown in the mandibular posterior area for patients with bruxism. Forty-nine full zirconia crowns, with seven different occlusal thicknesses of 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, and 1.0 mm, were made by using a computer-aided design/computer-aided manufacturing system (CAD/CAM). Seven crowns in each group were subjected to cyclic loading at 800 N and 5 Hz in a servohydraulic testing machine until fracture or completion of 100,000 cycles. Seven finite element models comprising seven different occlusal thicknesses of 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, and 1.0 mm were simulated using three different loads of vertical 800 N, oblique 10 degrees 800 N, and vertical 800 N + x N torque (x = 10, 50, and 100). The results of cyclic loading tests showed that the fracture resistance of the crown was positively associated with thickness. Specimen breakage differed significantly according to the different thicknesses of the prostheses (p < 0.01). Lowest von Mises stress values were determined for prostheses with a minimal thickness of 1.0 mm in different loading directions and with different forces. Zirconia specimens of 1.0 mm thickness had the lowest stress values and high fracture resistance and under 800 N of loading.

The Extremely Enhanced Photocurrent Response in Topological Insulator Nanosheets with High Conductance

The photocurrent was performed in topological insulator nanosheets with different conductances. The higher photocurrent is observed in the nanosheet with higher conductance. The responsivity is proportional to the nanosheet conductance over two orders. The responsivity is independent of the light power intensity in vacuum, but responsivity drastically decreases at low power intensity in air. The ratio of the responsivity in air to that in vacuum is negatively proportional to the the inverse of the light power intensity. These behaviors are understood as the statistical photocurrent in a system with blocked molecules. The time constant decreases as the thickness increases. A longer time constant is observed in lower atmosphere pressure.

In situ inward epitaxial growth of bulk macroporous single crystals

The functionalities of porous materials could be significantly enhanced if the materials themselves were in single-crystal form, which, owing to structural coherence, would reduce electronic and optical scattering effects. However, growing macroporous single crystals remains a fundamental challenge, let alone manufacturing crystals large enough to be of practical use. Here we demonstrate a straightforward, inexpensive, versatile method for creating macroporous gallium nitride single crystals on a centimetre scale. The synthetic strategy is built upon a disruptive crystal growth mechanism that utilises direct nitridation of a parent LiGaO₂ single crystal rendering an inward epitaxial growth process. Strikingly, the resulting single crystals exhibit electron mobility comparable to that for bulk crystals grown by the conventional sodium flux method. This approach not only affords control of both crystal and pore size through synthetic modification, but proves generic, thus opening up the possibility of designing macroporous crystals in a wealth of other materials.

Porous single crystals are desirable for optoelectronic applications, but their fabrication remains challenging. Here the authors produce centimetre-sized macroporous GaN single crystals with electron mobility comparable to that of bulk crystals via in situ inward epitaxial growth on parent LiGaO₂ crystals.

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

M-plane GaN thin films were grown on LiAlO₂ substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0]. According to high-resolution X-ray diffraction analysis, Li₅GaO₄ was observed on the interface between GaN and LiAlO₂ substrate. The formation of Li₅GaO₄ would influence the surface morphology and crystal quality.

Ultrasensitive nonlinear absorption response of large-size topological insulator and application in low-threshold bulk pulsed lasers

Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi₂Te₃ exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi₂Te₃ sheets with lateral size up to a few micrometers showed extremely low saturation absorption intensities of only 1.1 W/cm² at 1.0 and 1.3 μm, respectively. Benefiting from this sensitive response, a Q-switching pulsed laser was achieved in a 1.0 μm Nd:YVO₄ laser where the threshold absorbed pump power was only 31 mW. This is the lowest threshold in Q-switched solid-state bulk lasers to the best of our knowledge. A pulse duration of 97 ns was observed with an average power of 26.1 mW. A Q-switched laser at 1.3 μm was also realized with a pulse duration as short as 93 ns. Moreover, the mode locking operation was demonstrated. These results strongly exhibit that Bi₂Te₃ is a promising optical device for constructing broadband, miniature and integrated high-energy pulsed laser systems with low power consumption. Our work clearly points out a significantly potential avenue for the development of two-dimensional-material-based broadband ultrasensitive photodetector and other optoelectronic devices.

Fracture resistance of monolithic zirconia crowns with different occlusal thicknesses in implant prostheses

STATEMENT OF PROBLEM

The use of monolithic zirconia crowns in implant prostheses is increasing, especially when the interdental space is insufficient. However, fractures have been reported in clinical practice.

PURPOSE

The purpose of this study was to determine the minimal thickness of a complete zirconia crown used for an implant prosthesis in the posterior dental region.

MATERIAL AND METHODS

Fifty complete zirconia crowns were produced using a computer-aided design/computer-aided manufacturing technique. In each group, 5 crowns of varying thicknesses (0.4, 0.5, 0.6, 0.7, and 0.8 mm) were subjected to cycles of vertical and 10-degree oblique compressive loading at 5 Hz and 300 N in a servohydraulic testing machine. Five finite element models comprising 5 different occlusal thicknesses (0.4, 0.5, 0.6, 0.7, and 0.8 mm) were simulated at 2 loading angles (0 and 10 degrees) and 3 loading forces (300, 500, and 800 N). Data were statistically analyzed, and fracture patterns were observed with a scanning electron microscope.

RESULTS

Cyclic loading tests revealed that the fracture resistance of the specimens was positively associated with prosthesis thickness (P<.01). Low von Mises stress values were obtained for prostheses with a minimal thickness of 0.7 mm under varying loading directions and forces.

CONCLUSIONS

Zirconia prostheses with a minimal thickness of 0.7 mm had a high fracture resistance and the lowest stress values. Therefore, dentists and laboratory technicians should carefully choose the optimum thickness of zirconia prostheses.

Microstructural and optical properties of high-quality ZnO epitaxially grown on a LiGaO2 substrate

ZnO films with high crystallinity, high optical quality and very smooth surface have been epitaxially grown on (001) LiGaO₂ substrate.

The synthesis route and the growth mechanism of aligned GaN nanobelts

Crystallographically aligned GaN nanobelt arrays were synthesized through a hybrid process of Au-assisted nucleation followed by non-Au-assisted anisotropy vapor-solid growth on a (100) γ-LiAlO2 substrate. To the best of our knowledge, this is the first report on aligned GaN nanobelts.

Structural Properties of Free-Standing 50 mm Diameter GaN Wafers with (1010) Orientation Grown on LiAlO2

(1010) GaN wafers grown on (100) face of γ-LiAlO2 were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1 type. This is consistent with diffraction contrast experiments.

Acoustic velocities of shear waves in La3Ga(5.5)Ta(0.5)O14 piezoelectric crystal using singular value decomposition

La3Ga(5.5)Ta(0.5)O14 (LGT) is a new piezoelectric material with superior electromechanical properties and high Q.f product. Transverse-wave splitting behavior of LGT was observed in the acoustic velocity measurements. The velocities of the two shear waves propagating in Y-(010) direction are very close and they cannot be separated completely. This has a tremendous influence on determining the correct velocity of the shear modes. It is proposed that the singular value decomposition (SVD) technique can be used to determine the splitting time of two shear modes in Y-plane LGT crystal. Moreover, it also helps to correct the arrival time of the transverse waves. It is believed that the presented approach is efficient and accurate for determining the correct velocities of shear modes in anisotropic media.