Formation of NV centers in diamond by a femtosecond laser single pulse

The NV centers in a diamond were successfully created by the femtosecond laser single pulse. We also investigated the effect on the diamond lattice induced by the different laser pulse widths from both experimental and theoretical perspectives. Interestingly, in spite of the high thermal conductivity of a diamond, we found that there is a suitable pulse repetition rate of several tens kHz for the formation of NV center ensembles by the femtosecond laser pulse irradiation.

Optically detected magnetic resonance of high-density ensemble of NV- centers in diamond

Optically detected magnetic resonance (ODMR) is a way to characterize the ensemble of NV^-centers. Recently, a remarkably sharp dip was observed in the ODMR with a high-density ensemble of NV centers. The model (Zhu et al 2014 Nat. Commun. 5 3424) indicated that such a dip was due to the spin-1 properties of the NV^- centers. Here, we present many more details of the analysis to show how this model can be applied to investigate the properties of the NV^- centers. By using our model, we have reproduced the ODMR with and without applied external magnetic fields. Additionally, we investigate how the ODMR is affected by the typical parameters of the ensemble NV^- centers such as strain distributions, inhomogeneous magnetic fields, and homogeneous broadening width. Our model provides a way to characterize the NV^- center from the ODMR, which would be crucial to realize diamond-based quantum information processing.

Analysis of the spectroscopy of a hybrid system composed of a superconducting flux qubit and diamond NV(-) centers

A hybrid system that combines the advantages of a superconductor flux qubit and an electron spin ensemble in diamond is one of the promising devices to realize quantum information processing. Exploring the properties of the superconductor diamond system is essential for the efficient use of this device. When we perform spectroscopy of this system, significant power broadening is observed. However, previous models to describe this system are known to be applicable only when the power broadening is negligible. Here, we construct a new approach to analyze this system with strong driving, and succeed in reproducing the spectrum with the power broadening. Our results provide an efficient way to analyze this hybrid system.

Highly sensitive nanoscale spin-torque diode

Highly sensitive microwave devices that are operational at room temperature are important for high-speed multiplex telecommunications. Quantum devices such as superconducting bolometers possess high performance but work only at low temperature. On the other hand, semiconductor devices, although enabling high-speed operation at room temperature, have poor signal-to-noise ratios. In this regard, the demonstration of a diode based on spin-torque-induced ferromagnetic resonance between nanomagnets represented a promising development, even though the rectification output was too small for applications (1.4 mV mW(-1)). Here we show that by applying d.c. bias currents to nanomagnets while precisely controlling their magnetization-potential profiles, a much greater radiofrequency detection sensitivity of 12,000 mV mW(-1) is achievable at room temperature, exceeding that of semiconductor diode detectors (3,800 mV mW(-1)). Theoretical analysis reveals essential roles for nonlinear ferromagnetic resonance, which enhances the signal-to-noise ratio even at room temperature as the size of the magnets decreases.

Response to Comment on "Multipartite Entanglement Among Single Spins in Diamond"

Our study reported entanglement among single spins in diamond. Lovett and Benjamin argue that three of six described entangled states were not achieved. Here, we explain our choice of entangled states and discuss their importance for quantum information processing. We also show that the eigenstates discussed by Lovett and Benjamin, although formally entangled and routinely generated in our experiments, cannot be used to detect nonlocal correlations.

In situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111)

We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center density reached around 2.5-3.0 x 10(12) cm(-2), which is the same density as in the case of thick SiO2. This result shows that the Pb center density does not originate from the long-range accumulation of the structural stress between two materials, but from the chemical reactions of oxidation within a few Si atomic layers.