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Kunwar S, Cucciniello N, Mazza AR, Zhang D, Santillan L, Freiman B, Roy P, Jia Q, MacManus-Driscoll JL, Wang H, Nie W, Chen A. Reconfigurable Resistive Switching in VO 2/La 0.7Sr 0.3MnO 3/Al 2O 3 (0001) Memristive Devices for Neuromorphic Computing. ACS Appl Mater Interfaces 2024; 16:19103-19111. [PMID: 38578811 DOI: 10.1021/acsami.3c19032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/07/2024]
Abstract
The coexistence of nonvolatile and volatile switching modes in a single memristive device provides flexibility to emulate both neuronal and synaptic functions in the brain. Furthermore, such a device structure may eliminate the need for additional circuit elements such as transistor-based selectors, enabling low-power consumption and high-density device integration in fully memristive spiking neural networks. In this work, we report dual resistive switching (RS) modes in VO2/La0.7Sr0.3MnO3 (LSMO) bilayer memristive devices. Specifically, the nonvolatile RS is driven by the movement of oxygen vacancies (Vo) at the VO2/LSMO interface and requires a higher biasing voltage, whereas the volatile RS is controlled by the metal-insulator transition (MIT) of VO2 under a lower biasing voltage. The simple device structure is electrically driven between the two RS modes and thus can operate as a one selector-one resistor (1S1R) cell, which is a desirable feature in memristive crossbar arrays to avoid the sneak-path current issue. The RS modes are found to be stable and repeatable and can be reconfigured by exploiting the interfacial and phase transition properties, and thus, they hold great promise for applications in memristive neural networks and neuromorphic computing.
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Affiliation(s)
- Sundar Kunwar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Nicholas Cucciniello
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, New York 14260, United States
| | - Alessandro R Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Di Zhang
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Luis Santillan
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Ben Freiman
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Pinku Roy
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, New York 14260, United States
| | - Judith L MacManus-Driscoll
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Haiyan Wang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wanyi Nie
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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Roy P, Zhang D, Mazza AR, Cucciniello N, Kunwar S, Zeng H, Chen A, Jia Q. Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures. Nanoscale 2023; 15:17589-17598. [PMID: 37873761 DOI: 10.1039/d3nr02407e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Topologically protected non-trivial spin textures (e.g. skyrmions) give rise to a novel phenomenon called the topological Hall effect (THE) and have promising implications in future energy-efficient nanoelectronic and spintronic devices. Here, we have studied the Hall effect in SrRuO3/La0.42Ca0.58MnO3 (SRO/LCMO) bilayers. Our investigation suggests that pure SRO has hard and soft magnetic characteristics but the anomalous Hall effect (AHE) in SRO is governed by the high coercivity phase. We have shown that the proximity effect of a soft magnetic LCMO on SRO plays a critical role in interfacial magnetic coupling and transport properties in SRO. Upon reducing the SRO thickness in the bilayer, the proximity effect becomes the dominant feature, enhancing the magnitude and temperature range of THE-like signatures. The THE-like features in bilayers can be explained by a diffusive Berry phase transition model in the presence of an emergent magnetic state due to interface coupling. This work provides an alternative understanding of THE-like signatures and their manipulation in SRO-based heterostructures, bilayers and superlattices.
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Affiliation(s)
- Pinku Roy
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Di Zhang
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Alessandro R Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Nicholas Cucciniello
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Sundar Kunwar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Hao Zeng
- Department of Physics, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
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Cucciniello N, Mazza AR, Roy P, Kunwar S, Zhang D, Feng HY, Arsky K, Chen A, Jia Q. Anisotropic Properties of Epitaxial Ferroelectric Lead-Free 0.5[Ba(Ti 0.8Zr 0.2)O 3]-0.5(Ba 0.7Ca 0.3)TiO 3 Films. Materials (Basel) 2023; 16:6671. [PMID: 37895653 PMCID: PMC10608784 DOI: 10.3390/ma16206671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Revised: 10/06/2023] [Accepted: 10/11/2023] [Indexed: 10/29/2023]
Abstract
As the energy demand is expected to double over the next 30 years, there has been a major initiative towards advancing the technology of both energy harvesting and storage for renewable energy. In this work, we explore a subset class of dielectrics for energy storage since ferroelectrics offer a unique combination of characteristics needed for energy storage devices. We investigate ferroelectric lead-free 0.5[Ba(Ti0.8Zr0.2)O3]-0.5(Ba0.7Ca0.3)TiO3 epitaxial thin films with different crystallographic orientations grown by pulsed laser deposition. We focus our attention on the influence of the crystallographic orientation on the microstructure, ferroelectric, and dielectric properties. Our results indicate an enhancement of the polarization and strong anisotropy in the dielectric response for the (001)-oriented film. The enhanced ferroelectric, energy storage, and dielectric properties of the (001)-oriented film is explained by the coexistence of orthorhombic-tetragonal phase, where the disordered local structure is in its free energy minimum.
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Affiliation(s)
- Nicholas Cucciniello
- Department of Materials Design & Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA or (N.C.); (H.Y.F.)
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA; (A.R.M.); (P.R.); (S.K.); (D.Z.)
| | - Alessandro R. Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA; (A.R.M.); (P.R.); (S.K.); (D.Z.)
| | - Pinku Roy
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA; (A.R.M.); (P.R.); (S.K.); (D.Z.)
| | - Sundar Kunwar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA; (A.R.M.); (P.R.); (S.K.); (D.Z.)
| | - Di Zhang
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA; (A.R.M.); (P.R.); (S.K.); (D.Z.)
| | - Henry Y. Feng
- Department of Materials Design & Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA or (N.C.); (H.Y.F.)
| | - Katrina Arsky
- Department of Materials Science & Engineering, University of Illinois Urbana, Urbana, IL 61801, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA; (A.R.M.); (P.R.); (S.K.); (D.Z.)
| | - Quanxi Jia
- Department of Materials Design & Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA or (N.C.); (H.Y.F.)
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Yuan R, Kumar A, Zhuang S, Cucciniello N, Lu T, Xue D, Penn A, Mazza AR, Jia Q, Liu Y, Xue D, Li J, Hu JM, LeBeau JM, Chen A. Machine Learning-Enabled Superior Energy Storage in Ferroelectric Films with a Slush-Like Polar State. Nano Lett 2023. [PMID: 37224193 DOI: 10.1021/acs.nanolett.3c00277] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Heterogeneities in structure and polarization have been employed to enhance the energy storage properties of ferroelectric films. The presence of nonpolar phases, however, weakens the net polarization. Here, we achieve a slush-like polar state with fine domains of different ferroelectric polar phases by narrowing the large combinatorial space of likely candidates using machine learning methods. The formation of the slush-like polar state at the nanoscale in cation-doped BaTiO3 films is simulated by phase field simulation and confirmed by aberration-corrected scanning transmission electron microscopy. The large polarization and the delayed polarization saturation lead to greatly enhanced energy density of 80 J/cm3 and transfer efficiency of 85% over a wide temperature range. Such a data-driven design recipe for a slush-like polar state is generally applicable to quickly optimize functionalities of ferroelectric materials.
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Affiliation(s)
- Ruihao Yuan
- T-4, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
| | - Abinash Kumar
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shihao Zhuang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Nicholas Cucciniello
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, New York 14260, United States
| | - Teng Lu
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Deqing Xue
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Aubrey Penn
- MIT.nano, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Alessandro R Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, New York 14260, United States
| | - Yun Liu
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Dezhen Xue
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jinshan Li
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
| | - Jia-Mian Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - James M LeBeau
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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Cucciniello N, Lee D, Feng HY, Yang Z, Zeng H, Patibandla N, Zhu M, Jia Q. Superconducting niobium nitride: a perspective from processing, microstructure, and superconducting property for single photon detectors. J Phys Condens Matter 2022; 34:374003. [PMID: 35779516 DOI: 10.1088/1361-648x/ac7dd6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Superconducting niobium nitride (NbN) continues to be investigated decades on, largely in part to its advantageous superconducting properties and wide use in superconducting electronics. Particularly, NbN-based superconducting nanowire single-photon detectors (SNSPDs) have shown exceptional performance and NbN remains as the material of choice in developing future generation quantum devices. In this perspective, we describe the processing-structure-property relationships governing the superconducting properties of NbN films. We further discuss the complex interplay between the material properties, processing parameters, substrate materials, device architectures, and performance of SNSPDs. We also highlight the latest progress in optimizing SNSPD performance parameters.
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Affiliation(s)
- Nicholas Cucciniello
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY 14260, United States of America
| | - Derek Lee
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY 14260, United States of America
| | - Henry Y Feng
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY 14260, United States of America
| | - Zihao Yang
- Applied Materials, Inc., Santa Clara, CA 95054, United States of America
| | - Hao Zeng
- Department of Physics, University at Buffalo-The State University of New York, Buffalo, NY 14260, United States of America
| | - Nag Patibandla
- Applied Materials, Inc., Santa Clara, CA 95054, United States of America
| | - Mingwei Zhu
- Applied Materials, Inc., Santa Clara, CA 95054, United States of America
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY 14260, United States of America
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