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Dorokhin MV, Vikhrova OV, Demina PB, Kalentyeva IL, Vergeles PS, Yakimov EB, Lesnikov VP, Zvonkov BN, Ved MV, Danilov YA, Zdoroveyshchev AV. GaAs diodes for TiT 2-based betavoltaic cells. Appl Radiat Isot 2021; 179:110030. [PMID: 34814010 DOI: 10.1016/j.apradiso.2021.110030] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2021] [Revised: 09/22/2021] [Accepted: 11/11/2021] [Indexed: 11/02/2022]
Abstract
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance.
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Affiliation(s)
- M V Dorokhin
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - O V Vikhrova
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - P B Demina
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - I L Kalentyeva
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - P S Vergeles
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6 Academician Ossipyan Str., Chernogolovka, Moscow Region, 142432, Russia
| | - E B Yakimov
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6 Academician Ossipyan Str., Chernogolovka, Moscow Region, 142432, Russia
| | - V P Lesnikov
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - B N Zvonkov
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - M V Ved
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia.
| | - Yu A Danilov
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
| | - A V Zdoroveyshchev
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia
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Zdoroveyshchev AV, Vikhrova OV, Demina PB, Dorokhin MV, Kudrin AV, Temiryazev AG, Temiryazeva MP. Magneto-Optical and Micromagnetic Properties of Ferromagnet/Heavy Metal Thin Film Structures. Int J Nanosci 2019. [DOI: 10.1142/s0219581x19400192] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
This paper presents a comparative analysis of the magnetization, Kerr and Faraday magneto-optical effects, magnetic force microscopy measurements of CoPt, CoPd, FePd alloy thin films. The films were fabricated by electron-beam evaporation, with the variation of a ferromagnetic material content. A decrease in the size of magnetic domains with an increase of the Co content in CoPt and CoPd films is shown. The presence of two magnetic phases in the films is discussed.
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Affiliation(s)
| | - O. V. Vikhrova
- University of Nizhny Novgorod, Nizhny Novgorod 60390, Russia
| | - P. B. Demina
- University of Nizhny Novgorod, Nizhny Novgorod 60390, Russia
| | - M. V. Dorokhin
- University of Nizhny Novgorod, Nizhny Novgorod 60390, Russia
| | - A. V. Kudrin
- University of Nizhny Novgorod, Nizhny Novgorod 60390, Russia
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Dorokhin MV, Gavva VA, Ved' MV, Demina PB, Kuznetsov YM, Erofeeva IV, Nezhdanov AV, Boldin MS, Lantsev EA, Popov AA, Trushin VN, Vikhrova OV, Boryakov AV, Yakimov EB, Tabachkova NY. New functional material: spark plasma sintered Si/SiO 2 nanoparticles – fabrication and properties. RSC Adv 2019; 9:16746-16753. [PMID: 35516405 PMCID: PMC9064410 DOI: 10.1039/c9ra01130g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2019] [Accepted: 05/07/2019] [Indexed: 11/21/2022] Open
Abstract
A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique. Structural investigations revealed that this material has the composition of ∼14 nm core Si granules inside an SiO2 shell. Photoluminescence measurements have shown that the emission spectra lie in the energy range of 0.6–1.1 eV, which is not typical of the emissions of the Si/SiO2 nanostructures reported in numerous papers. This result can be explained by the formation of energy states in the bandgap and the participation of these states in both electronic transport and photoluminescence emission. Annealing of the sample leads to a decrease in defect density, which in turn leads to quenching of the 0.6–1.1 eV photoluminescence. In this case ∼1.13 eV inter-band transitions in the Si core start to play a dominant role in radiative recombination. Thus, the possibility of controlling the photoluminescence emission over a broad wavelength range was demonstrated. A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique.![]()
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