Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.

Oxygen self-diffusion in HfO2 studied by electron spectroscopy

High-resolution measurement of the energy of electrons backscattered from oxygen atoms makes it possible to distinguish between (18)O and (16)O isotopes as the energy of elastically scattered electrons depends on the mass of the scattering atom. Here we show that this approach is suitable for measuring oxygen self-diffusion in HfO2 using a Hf(16)O2 (20 nm)/Hf(18)O2 bilayers (60 nm). The mean depth probed (for which the total path length equals the inelastic mean free path) is either 5 or 15 nm in our experiment, depending on the geometry used. Before annealing, the elastic peak from O is thus mainly due to electrons scattered from (16)O in the outer layer, while after annealing the signal from (18)O increases due to diffusion from the underlying Hf(18)O2 layer. For high annealing temperatures the observed interdiffusion is consistent with an activation energy of 1 eV, but at lower temperatures interdiffusion decreases with increasing annealing time. We interpret this to be a consequence of defects, present in the layers early on and enhancing the oxygen diffusivity, disappearing during the annealing process.

Crystallization of Indium Implanted Amorphous Silicon

The annealing behavior of In+-implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentrations > 0.5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.

Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous Si

The diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150–600° C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515°C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.

Co/SixGe1-x Alloy Formation on Strained SixGe1-x Layers

The thermally-induced Co/SixGe1-x reaction has been studied for a series of isochronal (25–600°C/20 min) and isothermal (600°C/u-240 min) annealing sequences using Rutherford backscattering spectrometry, transmission electron microscopy and sheet resistance measurements. Annealing at 600°C yields a reacted surface layer comprised of Si-rich CoSixGe1-x, Ge-rich SiyGe1-y and possibly CoSi2, with the two former constituents exhibiting a degree of epitaxial alignment with the substrate. The formation of Co/SiSixGe1-x alloys is discussed in terms of the ternary phase diagram.

Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires

Crystalline Si/SiOx core/shell nanowires (NWs) are self-assembled by annealing Ni-coated hydrogenated Si-rich SiOx (SRO:H) films at 1100 degrees C in the presence of Si powder. Plasma-enhanced chemical vapor deposition is used to grow 100 nm SRO:H thin films with varying silicon concentration (n(Si)). The NWs vary from SiOx nanowires to Si/SiOx core/shell structures depending on the composition of the SRO:H substrate, with the fraction of core/shell structures increasing with increasing Si concentration. As n(Si) increases from 37 to 43 at.%, the average diameter of the NWs also increases from 48 to 157 nm. A growth model based on the diffusion-assisted vapor-liquid-solid mechanism is proposed to explain how the core/shell structures are self-assembled. Photoluminescence (PL) spectra of the individual NWs have two major emission bands in the near UV (381 nm) and blue (423 nm) ranges at n(Si) = 43 at.%, named as UV and BL PL bands, respectively. In contrast, only the BL PL band is observed at n(Si) < or = 39 at.%. These results suggest that the BL and UV PL bands can be attributed to the defect states in the SiOx shell and at the Si core/SiOx shell interface, respectively, and that the BL band is closely related to the growth process of the NWs.

Gold bead-strings in silica nanowires: a simple diffusion model

Silica nanowires grown from gold droplets deposited on the surface of a silicon crystal sometimes develop within them a regular series of gold beads distributed along the wire axis in what is often called either a bead-string or a pea-pod structure. This is generally attributed to a 'Rayleigh instability' driven by the surface free energy of the included gold core. Here a new model is proposed in which quasi-conical gold inclusions are developed by the diffusion-limited growth process and are subsequently modified to spherical shape by another diffusion process that is driven by surface free energy. This model provides a possible basis for detailed numerical calculations.