Heyn C, Stemmann A, Köppen T, Strelow C, Kipp T, Grave M, Mendach S, Hansen W. Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes.
Nanoscale Res Lett 2009;
5:576-580. [PMID:
20672041 PMCID:
PMC2894351 DOI:
10.1007/s11671-009-9507-3]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2009] [Accepted: 12/09/2009] [Indexed: 05/26/2023]
Abstract
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.
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