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Tanide A, Nakamura S, Horikoshi A, Takatsuji S, Kimura T, Kinose K, Nadahara S, Nishikawa M, Ebe A, Ishikawa K, Oda O, Hori M. Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources. ACS Omega 2020; 5:26776-26785. [PMID: 33111004 PMCID: PMC7581250 DOI: 10.1021/acsomega.0c03865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2020] [Accepted: 09/24/2020] [Indexed: 06/11/2023]
Abstract
The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on AlN/sapphire substrates by chemically assisted dual source sputtering are studied at a low growth temperature of 600 °C under a pressure of 2 Pa using vacuum ultraviolet absorption spectroscopy. The lateral growth was strongly enhanced with an appropriate H/N flux ratio of 1.9 at a GaN growth rate of ∼1 μm h-1. X-ray photoelectron spectroscopy measurements indicated that N removal from the grown GaN surface by atomic hydrogen promoted the migration of Ga. A smooth GaN surface was achieved at a suitable N/Ga supply ratio of 53 and a H/N ratio of 1.9 with the addition of 0.5% chlorine to the Ar sputtering gas.
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Affiliation(s)
- Atsushi Tanide
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
| | - Shohei Nakamura
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
- Center
for Low-Temperature Plasma Sciences, Nagoya
University, Furo-cho, Chikusa, Nagoya, Aichi 464-8601, Japan
| | - Akira Horikoshi
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
| | - Shigeru Takatsuji
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
| | - Takahiro Kimura
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
- Center
for Low-Temperature Plasma Sciences, Nagoya
University, Furo-cho, Chikusa, Nagoya, Aichi 464-8601, Japan
| | - Kazuo Kinose
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
| | - Soichi Nadahara
- Rakusei
Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan
| | | | - Akinori Ebe
- EMD
Corp., 2426-1 Mikami, Yasu, Shiga 520-2323, Japan
| | - Kenji Ishikawa
- Center
for Low-Temperature Plasma Sciences, Nagoya
University, Furo-cho, Chikusa, Nagoya, Aichi 464-8601, Japan
| | - Osamu Oda
- Center
for Low-Temperature Plasma Sciences, Nagoya
University, Furo-cho, Chikusa, Nagoya, Aichi 464-8601, Japan
| | - Masaru Hori
- Center
for Low-Temperature Plasma Sciences, Nagoya
University, Furo-cho, Chikusa, Nagoya, Aichi 464-8601, Japan
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