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Zhang H, Piazza V, Neplokh V, Guan N, Bayle F, Collin S, Largeau L, Babichev A, Julien FH, Tchernycheva M. Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes. Nanotechnology 2021; 32:105202. [PMID: 33142273 DOI: 10.1088/1361-6528/abc70e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The performance of core-shell InGaN/GaN nanowire (NW) light emitting diodes (LEDs) can be limited by wire-to-wire electrical inhomogeneities. Here we investigate an array of core-shell InGaN/GaN NWs which are morphologically identical, but present electrical dissimilarities in order to understand how the nanoscale phenomena observed in individual NWs affect the working performance of the whole array. The LED shows a low number of NWs (∼20%) producing electroluminescence under operating conditions. This is related to a presence of a potential barrier at the interface between the NW core and the radially grown n-doped layer, which differently affects the electrical properties of the NWs although they are morphologically identical. The impact of the potential barrier on the performance of the NW array is investigated by correlating multi-scanning techniques, namely electron beam induced current microscopy, electroluminescence mapping and cathodoluminescence analysis. It is found that the main cause of inhomogeneity in the array is related to a non-optimized charge injection into the active region, which can be overcome by changing the contact architecture so that the electrons become injected directly in the n-doped underlayer. The LED with so-called 'front-n-contacting' is developed leading to an increase of the yield of emitting NWs from 20% to 65%.
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Affiliation(s)
- H Zhang
- School of Microelectronics, Dalian University of Technology, 116024 Dalian, People's Republic of China
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - V Piazza
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
- Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - V Neplokh
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
- National Research Academic University of the Russian Academy of Sciences, 194021, Saint Petersburg, Russia
| | - N Guan
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - F Bayle
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - S Collin
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - L Largeau
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - A Babichev
- ITMO University, 197101, Saint Petersburg, Russia
| | - F H Julien
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
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Kochetkov FM, Neplokh V, Fedorov VV, Bolshakov AD, Sharov VA, Eliseev IE, Tchernycheva M, Cirlin GE, Nasibulin AG, Islamova RM, Mukhin IS. Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices. Nanotechnology 2020; 31:46LT01. [PMID: 32877371 DOI: 10.1088/1361-6528/abae98] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. The synthesized graft-copolymers of polydimethylsiloxane (PDMS) and polystyrene demonstrated two times lower adhesion to Si compared to standard PDMS, allowing 3 square inch area high quality silicone/nanowire membrane mechanical release, preserving the growth Si substrate for a further re-use after chemical cleaning. The 90% transparent single-walled carbon nanotubes electrical contacts to the embedded n-GaP nanowires demonstrated mechanical and electrical stability. The presented methods can be used for the fabrication of large scale flexible inorganic optoelectronic devices.
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Messanvi A, Zhang H, Neplokh V, Julien FH, Bayle F, Foldyna M, Bougerol C, Gautier E, Babichev A, Durand C, Eymery J, Tchernycheva M. Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires. ACS Appl Mater Interfaces 2015; 7:21898-21906. [PMID: 26378593 DOI: 10.1021/acsami.5b06473] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.
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Affiliation(s)
- A Messanvi
- Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France
- Université Grenoble Alpes , 38000 Grenoble, France
- CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000 Grenoble, France
| | - H Zhang
- Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France
| | - V Neplokh
- Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France
| | - F H Julien
- Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France
| | - F Bayle
- Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France
| | - M Foldyna
- LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France
| | - C Bougerol
- Université Grenoble Alpes , 38000 Grenoble, France
- CNRS, Inst. NEEL, 38042 Grenoble, France
| | - E Gautier
- Université Grenoble Alpes , 38000 Grenoble, France
- CEA, INAC-SPINTEC, 38000 Grenoble, France
| | - A Babichev
- ITMO University , 197101 St. Petersburg, Russia
| | - C Durand
- Université Grenoble Alpes , 38000 Grenoble, France
- CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000 Grenoble, France
| | - J Eymery
- Université Grenoble Alpes , 38000 Grenoble, France
- CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000 Grenoble, France
| | - M Tchernycheva
- Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France
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Tchernycheva M, Neplokh V, Zhang H, Lavenus P, Rigutti L, Bayle F, Julien FH, Babichev A, Jacopin G, Largeau L, Ciechonski R, Vescovi G, Kryliouk O. Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping. Nanoscale 2015; 7:11692-11701. [PMID: 26100114 DOI: 10.1039/c5nr00623f] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully operational devices allows to probe the electrical properties of the active region with a nanoscale resolution. In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. The EBIC maps combined with CL characterization demonstrate the impact of the compositional gradients along the wire axis on the electrical and optical signals: the reduction of the EBIC signal toward the nanowire top is accompanied by an increase of the CL intensity. This effect is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency. The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal. This observation is explained by the presence of charged traps at this interface, which can be saturated by electron irradiation.
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Affiliation(s)
- M Tchernycheva
- Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, 91405 Orsay cedex, France.
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