On the roles of graphene oxide doping for enhanced supercurrent in MgB2 based superconductors

Due to their graphene-like properties after oxygen reduction, incorporation of graphene oxide (GO) sheets into correlated-electron materials offers a new pathway for tailoring their properties. Fabricating GO nanocomposites with polycrystalline MgB2 superconductors leads to an order of magnitude enhancement of the supercurrent at 5 K/8 T and 20 K/4 T. Herein, we introduce a novel experimental approach to overcome the formidable challenge of performing quantitative microscopy and microanalysis of such composites, so as to unveil how GO doping influences the structure and hence the material properties. Atom probe microscopy and electron microscopy were used to directly image the GO within the MgB2, and we combined these data with computational simulations to derive the property-enhancing mechanisms. Our results reveal synergetic effects of GO, namely, via localized atomic (carbon and oxygen) doping as well as texturing of the crystals, which provide both inter- and intra-granular flux pinning. This study opens up new insights into how low-dimensional nanostructures can be integrated into composites to modify the overall properties, using a methodology amenable to a wide range of applications.

Direct observation of local potassium variation and its correlation to electronic inhomogeneity in (Ba(1-x)K(x))Fe2As2 pnictide

Local fluctuations in the distribution of dopant atoms are thought to cause the nanoscale electronic disorder or phase separation in pnictide superconductors. Atom probe tomography has enabled the first direct observations of dopant species clustering in a K-doped 122-phase pnictide. First-principles calculations suggest the coexistence of static magnetism and superconductivity on a lattice parameter length scale over a wide range of dopant concentrations. Our results provide evidence for a mixed scenario of phase coexistence and phase separation, depending on local dopant atom distributions.

Mechanism of enhancement in electromagnetic properties of MgB2 by Nano SiC doping

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.