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Irwin J, Lindemann S, Maeng W, Wang JJ, Vaithyanathan V, Hu JM, Chen LQ, Schlom DG, Eom CB, Rzchowski MS. Magnetoelectric Coupling by Piezoelectric Tensor Design. Sci Rep 2019; 9:19158. [PMID: 31844071 PMCID: PMC6914799 DOI: 10.1038/s41598-019-55139-1] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2019] [Accepted: 11/05/2019] [Indexed: 11/24/2022] Open
Abstract
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric/ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain manipulates the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the large reduction of in-plane piezoelectric strain by substrate clamping, and in two-terminal devices, the requirement of anisotropic in-plane strain. Here we show that these limitations can be overcome by designing the piezoelectric strain tensor using the boundary interaction between biased and unbiased piezoelectric. We fabricated 500 nm thick, (001) oriented [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting electric field-driven Ni magnetization rotation. We develop a method that can apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
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Affiliation(s)
- J Irwin
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - S Lindemann
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - W Maeng
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - J J Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - V Vaithyanathan
- Department of Material Science and Engineering, Cornell University, Ithaca, New York, 14853, United States
| | - J M Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - L Q Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - D G Schlom
- Department of Material Science and Engineering, Cornell University, Ithaca, New York, 14853, United States.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, 14853, United States
| | - C B Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - M S Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States.
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