Solvation Shifts the Band-Edge Position of Colloidal Quantum Dots by Nearly 1 eV

The optoelectronic properties of colloidal quantum dots (cQDs) depend critically on the absolute energy of the conduction and valence band edges. It is well known these band-edge energies are sensitive to the ligands on the cQD surface, but it is much less clear how they depend on other experimental conditions, like solvation. Here, we experimentally determine the band-edge positions of thin films of PbS and ZnO cQDs via spectroelectrochemical measurements. To achieve this, we first carefully evaluate and optimize the electrochemical injection of electrons and holes into PbS cQDs. This results in electrochemically fully reversible electron injection with >8 electrons per PbS cQDs, allowing the quantitative determination of the conduction band energy for PbS cQDs with various diameters and surface compositions. Surprisingly, we find that the band-edge energies shift by nearly 1 eV in the presence of different solvents, a result that also holds true for ZnO cQDs. We argue that complexation and partial charge transfer between solvent and surface ions are responsible for this large effect of the solvent on the band-edge energy. The trend in the energy shift matches the results of density functional theory (DFT) calculations in explicit solvents and scales with the energy of complexation between surface cations and solvents. As a first approximation, the solvent Lewis basicity can be used as a good descriptor to predict the shift of the conduction and valence band edges of solvated cQDs.

Numerical Model to Simulate Electrochemical Charging of Nanocrystal Films

Electrochemical charging of nanocrystal films opens up new possibilities for designing quantum dot-based device structures, but a solid theoretical framework of this process and its limitations is lacking. In this work, drift-diffusion simulations are employed to model the charging of nanocrystal films and gain insight into the electrochemical doping process. Through steady state simulations it is shown that the Fermi level and doping density in the nanocrystal film depend on the concentration of the electrolyte in addition to the value of the applied potential. Time-resolved simulations reveal that charging is often limited by transport of electrolyte ions. However, ion transport in the film is dominated by drift, rather than diffusion, and the concentration profile of ions differs substantially from concentration profiles of diffusing redox species at flat electrodes. Classical electrochemical theory cannot be used to model this type of mass transport limited behavior in films of nanocrystals, so a new model is developed. We show that the Randles-Ševčík equation, which is derived for electrochemical species diffusing in solution, but is often applied to films as well, results in a significant underestimation of the diffusion coefficients of the charge compensating electrolyte ions.

Long-Range Charge Transport via Redox Ligands in Quantum Dot Assemblies

We present a strategy to actively engineer long-range charge transport in colloidal quantum dot assemblies by using ligand functionalities that introduce electronic states and provide a path for carrier transfer. This is a shift away from the use of inactive spacers to modulate charge transport through the lowering of the tunneling barrier for interparticle carrier transfer. This is accomplished with the use of electronically coupled redox ligands by which a self-exchange chain reaction takes place and long-range charge transport is enabled across the film. We identified the different modes of charge transport in these quantum dot/redox ligand assemblies, their energetic position and kinetics, and explain how to rationally manipulate them through modulation of the Fermi level and redox ligand coverage.

Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites

The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silica has grown on highly conductive Si(110) crystal facets, the silica-silicon conversion becomes reversible at room temperature and accessible within a narrow potential window. We conclude that parasitic signals commonly observed in voltammograms of silicon electrodes originate from silica-silicon redox chemistry. While these findings do not remove the requirement of high temperature toward bulk silica electrochemical reduction, they redefine for silicon the potential window free from parasitic signals and, as such, significantly restrict the conditions where electroanalytical methods can be applied to the study of silicon surface reactivity.

Covalent Linkages of Molecules and Proteins to Si-H Surfaces Formed by Disulfide Reduction

Thiols and disulfide contacts have been, for decades, key for connecting organic molecules to surfaces and nanoclusters as they form self-assembled monolayers (SAMs) on metals such as gold (Au) under mild conditions. In contrast, they have not been similarly deployed on Si owing to the harsh conditions required for monolayer formation. Here, we show that SAMs can be simply formed by dipping Si-H surfaces into dilute solutions of organic molecules or proteins comprising disulfide bonds. We demonstrate that S-S bonds can be spontaneously reduced on Si-H, forming covalent Si-S bonds in the presence of traces of water, and that this grafting can be catalyzed by electrochemical potential. Cyclic disulfide can be spontaneously reduced to form complete monolayers in 1 h, and the reduction can be catalyzed electrochemically to form full surface coverages within 15 min. In contrast, the kinetics of SAM formation of the cyclic disulfide molecule on Au was found to be three-fold slower than that on Si. It is also demonstrated that dilute thiol solutions can form monolayers on Si-H following oxidation to disulfides under ambient conditions; the supply of too much oxygen, however, inhibits SAM formation. The electron transfer kinetics of the Si-S-enabled SAMs on Si-H is comparable to that on Au, suggesting that Si-S contacts are electrically transmissive. We further demonstrate the prospect of this spontaneous disulfide reduction by forming a monolayer of protein azurin on a Si-H surface within 1 h. The direct reduction of disulfides on Si electrodes presents new capabilities for a range of fields, including molecular electronics, for which highly conducting SAM-electrode contacts are necessary and for emerging fields such as biomolecular electronics as disulfide linkages could be exploited to wire proteins between Si electrodes, within the context of the current Si-based technologies.

The corona of a surface bubble promotes electrochemical reactions

The evolution of gaseous products is a feature common to several electrochemical processes, often resulting in bubbles adhering to the electrode’s surface. Adherent bubbles reduce the electrode active area, and are therefore generally treated as electrochemically inert entities. Here, we show that this general assumption does not hold for gas bubbles masking anodes operating in water. By means of imaging electrochemiluminescent systems, and by studying the anisotropy of polymer growth around bubbles, we demonstrate that gas cavities adhering to an electrode surface initiate the oxidation of water-soluble species more effectively than electrode areas free of bubbles. The corona of a bubble accumulates hydroxide anions, unbalanced by cations, a phenomenon which causes the oxidation of hydroxide ions to hydroxyl radicals to occur at potentials at least 0.7 V below redox tabled values. The downhill shift of the hydroxide oxidation at the corona of the bubble is likely to be a general mechanism involved in the initiation of heterogeneous electrochemical reactions in water, and could be harnessed in chemical synthesis.

Gas bubbles forming on the surface of an electrode, a phenomenon common to several industrial electrolytic processes, are usually perceived as inert, passivating entities. Here, the authors show that that this general assumption does not hold for gas bubbles masking anodes operating in water.

Metal-Single-Molecule-Semiconductor Junctions Formed by a Radical Reaction Bridging Gold and Silicon Electrodes

Here we report molecular films terminated with diazonium salts moieties at both ends which enables single-molecule contacts between gold and silicon electrodes at open circuit via a radical reaction. We show that the kinetics of film grafting is crystal-facet dependent, being more favorable on ⟨111⟩ than on ⟨100⟩, a finding that adds control over surface chemistry during the device fabrication. The impact of this spontaneous chemistry in single-molecule electronics is demonstrated using STM-break junction approaches by forming metal-single-molecule-semiconductor junctions between silicon and gold source and drain, electrodes. Au-C and Si-C molecule-electrode contacts result in single-molecule wires that are mechanically stable, with an average lifetime at room temperature of 1.1 s, which is 30-400% higher than that reported for conventional molecular junctions formed between gold electrodes using thiol and amine contact groups. The high stability enabled measuring current-voltage properties during the lifetime of the molecular junction. We show that current rectification, which is intrinsic to metal-semiconductor junctions, can be controlled when a single-molecule bridges the gap in the junction. The system changes from being a current rectifier in the absence of a molecular bridge to an ohmic contact when a single molecule is covalently bonded to both silicon and gold electrodes. This study paves the way for the merging of the fields of single-molecule and silicon electronics.

Light-addressable electrochemistry at semiconductor electrodes: redox imaging, mask-free lithography and spatially resolved chemical and biological sensing

Spatial confinement of electrochemical reactions at solid/liquid interfaces is a mature area of research, and a central theme from cell biology to analytical chemistry. Monitoring or manipulating the kinetics of a charge transfer reaction in 2D is generally achieved using scanning electrochemical microscopy or multielectrode arrays, techniques that rely on moving physical probes or on a network of electrical connections. This tutorial is introducing concepts and instruments to confine faradaic electrochemical reactions in 2D without resorting to the mechanical movement of a probe, and with the simple design of one semiconducting electrode, one electrical lead and a single-channel potentiostat. We provide a theoretical background of semiconductor electrochemistry, and describe the use of localised visible light stimuli on photoconductor/liquid and semiconductor/liquid interfaces to address electrical conductivity - hence chemical reactivity - only at one specific site defined by the experimentalist. This enables shifting of the tenet of one electrode/one wire towards one wire/many electrodes. We discuss the applications of this emerging platform in the context of surface chemistry patterning, redox imaging, chemical and biological sensing, generating chemical gradients, electrocatalysis, nanotechnology and cell biology.

Quantitative Analysis of Cyclic Voltammetry of Redox Monolayers Adsorbed on Semiconductors: Isolating Electrode Kinetics, Lateral Interactions, and Diode Currents

The design of devices whose functions span from sensing their environments to converting light into electricity or guiding chemical reactivity at surfaces often hinges around a correct and complete understanding of the factors at play when charges are transferred across an electrified solid-liquid interface. For semiconductor electrodes in particular, published values for charge-transfer kinetic constants are scattered. Furthermore, received wisdom suggests slower charge-transfer kinetics for semiconductors than for metal electrodes. We have used cyclic voltammetry of ferrocene-modified silicon photoanodes and photocathodes as the experimental model system and described a systematic analysis to separate charge-transfer kinetics from diode effects and interactions between adsorbed species. Our results suggest that literature values of charge-transfer kinetic constants at semiconductor electrodes are likely to be underestimates of their actual values. This is revealed by experiments and analytical models showing that the description of the potential distribution across the semiconductor-monolayer-electrolyte interface has been largely oversimplified.

Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring

Here we show that within a single polyhedral metal oxide nanoparticle a nanometer-scale lateral or vertical sliding of a small metal top contact ( e. g., <50 nm) leads to a 10-fold change in current rectification ratios. Electron tunneling imaging and constant-force current-potential analysis in atomic force microscopy demonstrate that within an individual p-n rectifier (a Cu₂O nanocrystal on silicon) the degree of current asymmetry can be modulated predictably by a set of geometric considerations. We demonstrate the concept of a single nanoscale entity displaying an in-built range of discrete electrical signatures and address fundamental questions in the direction of "landing" contacts in single-particle diodes. This concept is scalable to large 2D arrays, up to millimeters in size, with implications in the design and understanding of nanoparticle circuitry.