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Rivnay J, Leleux P, Ferro M, Sessolo M, Williamson A, Koutsouras DA, Khodagholy D, Ramuz M, Strakosas X, Owens RM, Benar C, Badier JM, Bernard C, Malliaras GG. High-performance transistors for bioelectronics through tuning of channel thickness. Sci Adv 2015; 1:e1400251. [PMID: 26601178 PMCID: PMC4640642 DOI: 10.1126/sciadv.1400251] [Citation(s) in RCA: 247] [Impact Index Per Article: 27.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2014] [Accepted: 04/02/2015] [Indexed: 05/20/2023]
Abstract
Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate ( PEDOT PSS) leads to a purely volumetric capacitance of 39 F/cm(3). This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance.
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Affiliation(s)
- Jonathan Rivnay
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Pierre Leleux
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
- MicroVitae Technologies, Pôle d’Activité Y. Morandat, 1480 rue d’Arménie, 13120 Gardanne, France
| | - Marc Ferro
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Michele Sessolo
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Adam Williamson
- Aix-Marseille Université, Institut de Neurosciences des Systèmes, 13005 Marseille, France
- INSERM, UMR_S 1106, 13005 Marseille, France
| | - Dimitrios A. Koutsouras
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Dion Khodagholy
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Marc Ramuz
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Xenofon Strakosas
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Roisin M. Owens
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
| | - Christian Benar
- Aix-Marseille Université, Institut de Neurosciences des Systèmes, 13005 Marseille, France
- INSERM, UMR_S 1106, 13005 Marseille, France
| | - Jean-Michel Badier
- Aix-Marseille Université, Institut de Neurosciences des Systèmes, 13005 Marseille, France
- INSERM, UMR_S 1106, 13005 Marseille, France
| | - Christophe Bernard
- Aix-Marseille Université, Institut de Neurosciences des Systèmes, 13005 Marseille, France
- INSERM, UMR_S 1106, 13005 Marseille, France
| | - George G. Malliaras
- Department of Bioelectronics, École Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541 Gardanne, France
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