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Jiang X, Zhou Q, Lu Y, Liang H, Li W, Wei Q, Pan M, Wen X, Wang X, Zhou W, Yu D, Wang H, Yin N, Chen H, Li H, Pan T, Ma M, Liu G, Zhou W, Su Z, Chen Q, Fan F, Zheng F, Gao X, Ji Q, Ning Z. Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells. Natl Sci Rev 2024; 11:nwae055. [PMID: 38577668 PMCID: PMC10989298 DOI: 10.1093/nsr/nwae055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 01/26/2024] [Accepted: 02/04/2024] [Indexed: 04/06/2024] Open
Abstract
Enhancing the quality of junctions is crucial for optimizing carrier extraction and suppressing recombination in semiconductor devices. In recent years, metal halide perovskite has emerged as the most promising next-generation material for optoelectronic devices. However, the construction of high-quality perovskite junctions, as well as characterization and understanding of their carrier polarity and density, remains a challenge. In this study, using combined electrical and spectroscopic characterization techniques, we investigate the doping characteristics of perovskite films by remote molecules, which is corroborated by our theoretical simulations indicating Schottky defects consisting of double ions as effective charge dopants. Through a post-treatment process involving a combination of biammonium and monoammonium molecules, we create a surface layer of n-type low-dimensional perovskite. This surface layer forms a heterojunction with the underlying 3D perovskite film, resulting in a favorable doping profile that enhances carrier extraction. The fabricated device exhibits an outstanding open-circuit voltage (VOC) up to 1.34 V and achieves a certified efficiency of 19.31% for single-junction wide-bandgap (1.77 eV) perovskite solar cells, together with significantly enhanced operational stability, thanks to the improved separation of carriers. Furthermore, we demonstrate the potential of this wide-bandgap device by achieving a certified efficiency of 27.04% and a VOC of 2.12 V in a perovskite/perovskite tandem solar cell configuration.
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Affiliation(s)
- Xianyuan Jiang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qilin Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hao Liang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wenzhuo Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qi Wei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Mengling Pan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xin Wen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xingzhi Wang
- Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wei Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Danni Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hao Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou 215123, China
| | - Hao Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hansheng Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ting Pan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Mingyu Ma
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Gaoqi Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wenjia Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou 215123, China
| | - Fengjia Fan
- Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Fan Zheng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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Shang Y, Liao Y, Wei Q, Wang Z, Xiang B, Ke Y, Liu W, Ning Z. Highly stable hybrid perovskite light-emitting diodes based on Dion-Jacobson structure. Sci Adv 2019; 5:eaaw8072. [PMID: 31453330 PMCID: PMC6697432 DOI: 10.1126/sciadv.aaw8072] [Citation(s) in RCA: 66] [Impact Index Per Article: 13.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2019] [Accepted: 07/08/2019] [Indexed: 05/11/2023]
Abstract
Organic-inorganic hybrid halide perovskites are emerging as promising materials for next-generation light-emitting diodes (LEDs). However, the poor stability of these materials has been the main obstacle challenging their application. Here, we performed first-principles calculations, revealing that the molecule dissociation energy of Dion-Jacobson (DJ) structure using 1,4-bis(aminomethyl)benzene molecules as bridging ligands is two times higher than the typical Ruddlesden-Popper (RP) structure based on phenylethylammonium ligands. Accordingly, LEDs based on the DJ structure show a half-lifetime over 100 hours, which is almost two orders of magnitude longer compared with those based on RP structural quasi-two-dimensional perovskite. To the best of our knowledge, this is the longest lifetime reported for all organic-inorganic hybrid perovskites operating at the current density, giving the highest external quantum efficiency (EQE) value. In situ tracking of the film composition in operation indicates that the DJ structure was maintained well after continuous operation under an electric field.
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Affiliation(s)
- Yuequn Shang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuan Liao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qi Wei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ziyu Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Bo Xiang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Youqi Ke
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Weimin Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Corresponding author. (W.L.); (Z.N.)
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Corresponding author. (W.L.); (Z.N.)
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