1
|
Liu L, Na N, Yu J, Zhao W, Wang Z, Zhu Y, Hu C. Sniffing Like a Wine Taster: Multiple Overlapping Sniffs (MOSS) Strategy Enhances Electronic Nose Odor Recognition Capability. Adv Sci (Weinh) 2024; 11:e2305639. [PMID: 38095453 PMCID: PMC10870059 DOI: 10.1002/advs.202305639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2023] [Revised: 10/24/2023] [Indexed: 02/17/2024]
Abstract
As highly promising devices for odor recognition, current electronic noses are still not comparable to human olfaction due to the significant disparity in the number of gas sensors versus human olfactory receptors. Inspired by the sniffing skills of wine tasters to achieve better odor perception, a multiple overlapping sniffs (MOSS) strategy is proposed in this study. The MOSS strategy involves rapid and continuous inhalation of odorants to stimulate the sensor array to generate feature-rich temporal signals. Computational fluid dynamics simulations are performed to reveal the mechanism of complex dynamic flows affecting transient responses. The proposed strategy shows over 95% accuracy in the recognition experiments of three gaseous alkanes and six liquors. Results demonstrate that the MOSS strategy can accurately and easily recognize odors with a limited sensor number. The proposed strategy has potential applications in various odor recognition scenarios, such as medical diagnosis, food quality assessment, and environmental surveillance.
Collapse
Affiliation(s)
- Luzheng Liu
- State Key Laboratory of TribologyDepartment of Mechanical EngineeringTsinghua UniversityBeijing100084China
| | - Na Na
- Key Laboratory of RadiopharmaceuticalsMinistry of EducationCollege of ChemistryBeijing Normal UniversityBeijing100875China
| | - Jichuan Yu
- State Key Laboratory of TribologyDepartment of Mechanical EngineeringTsinghua UniversityBeijing100084China
| | - Wenxiang Zhao
- State Key Laboratory of TribologyDepartment of Mechanical EngineeringTsinghua UniversityBeijing100084China
| | - Ze Wang
- State Key Laboratory of TribologyDepartment of Mechanical EngineeringTsinghua UniversityBeijing100084China
| | - Yu Zhu
- State Key Laboratory of TribologyDepartment of Mechanical EngineeringTsinghua UniversityBeijing100084China
| | - Chuxiong Hu
- State Key Laboratory of TribologyDepartment of Mechanical EngineeringTsinghua UniversityBeijing100084China
| |
Collapse
|
2
|
Wang H, Wang S, Zhang S, Zhu M, Ouyang W, Li Q. Deducing the internal interfaces of twisted multilayer graphene via moiré-regulated surface conductivity. Natl Sci Rev 2023; 10:nwad175. [PMID: 37484999 PMCID: PMC10361741 DOI: 10.1093/nsr/nwad175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Revised: 04/19/2023] [Accepted: 06/15/2023] [Indexed: 07/25/2023] Open
Abstract
The stacking state of atomic layers critically determines the physical properties of twisted van der Waals materials. Unfortunately, precise characterization of the stacked interfaces remains a great challenge as they are buried internally. With conductive atomic force microscopy, we show that the moiré superlattice structure formed at the embedded interfaces of small-angle twisted multilayer graphene (tMLG) can noticeably regulate surface conductivity even when the twisted interfaces are 10 atomic layers beneath the surface. Assisted by molecular dynamics (MD) simulations, a theoretical model is proposed to correlate surface conductivity with the sequential stacking state of the graphene layers of tMLG. The theoretical model is then employed to extract the complex structure of a tMLG sample with crystalline defects. Probing and visualizing the internal stacking structures of twisted layered materials is essential for understanding their unique physical properties, and our work offers a powerful tool for this via simple surface conductivity mapping.
Collapse
Affiliation(s)
| | | | | | - Mengzhen Zhu
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | | | | |
Collapse
|
3
|
Chai Z, Childress A, Busnaina AA. Directed Assembly of Nanomaterials for Making Nanoscale Devices and Structures: Mechanisms and Applications. ACS Nano 2022; 16:17641-17686. [PMID: 36269234 PMCID: PMC9706815 DOI: 10.1021/acsnano.2c07910] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 10/06/2022] [Indexed: 05/19/2023]
Abstract
Nanofabrication has been utilized to manufacture one-, two-, and three-dimensional functional nanostructures for applications such as electronics, sensors, and photonic devices. Although conventional silicon-based nanofabrication (top-down approach) has developed into a technique with extremely high precision and integration density, nanofabrication based on directed assembly (bottom-up approach) is attracting more interest recently owing to its low cost and the advantages of additive manufacturing. Directed assembly is a process that utilizes external fields to directly interact with nanoelements (nanoparticles, 2D nanomaterials, nanotubes, nanowires, etc.) and drive the nanoelements to site-selectively assemble in patterned areas on substrates to form functional structures. Directed assembly processes can be divided into four different categories depending on the external fields: electric field-directed assembly, fluidic flow-directed assembly, magnetic field-directed assembly, and optical field-directed assembly. In this review, we summarize recent progress utilizing these four processes and address how these directed assembly processes harness the external fields, the underlying mechanism of how the external fields interact with the nanoelements, and the advantages and drawbacks of utilizing each method. Finally, we discuss applications made using directed assembly and provide a perspective on the future developments and challenges.
Collapse
Affiliation(s)
- Zhimin Chai
- State
Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing100084, China
- NSF
Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing
(CHN), Northeastern University, Boston, Massachusetts02115, United States
| | - Anthony Childress
- NSF
Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing
(CHN), Northeastern University, Boston, Massachusetts02115, United States
| | - Ahmed A. Busnaina
- NSF
Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing
(CHN), Northeastern University, Boston, Massachusetts02115, United States
| |
Collapse
|
4
|
Zhang S, Song A, Chen L, Jiang C, Chen C, Gao L, Hou Y, Liu L, Ma T, Wang H, Feng XQ, Li Q. Abnormal conductivity in low-angle twisted bilayer graphene. Sci Adv 2020; 6:6/47/eabc5555. [PMID: 33219028 PMCID: PMC7679157 DOI: 10.1126/sciadv.abc5555] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2020] [Accepted: 10/07/2020] [Indexed: 05/19/2023]
Abstract
Controlling the interlayer twist angle offers a powerful means for tuning the electronic properties of two-dimensional (2D) van der Waals materials. Typically, the electrical conductivity would increase monotonically with decreasing twist angle owing to the enhanced coupling between adjacent layers. Here, we report a nonmonotonic angle-dependent vertical conductivity across the interface of bilayer graphene with low twist angles. More specifically, the vertical conductivity enhances gradually with decreasing twist angle up to a crossover angle at θc ≈ 5°, and then it drops notably upon further decrease in the twist angle. Revealed by density functional theory calculations and scanning tunneling microscopy, the abnormal behavior is attributed to the unusual reduction in average carrier density originating from local atomic reconstruction. The impact of atomic reconstruction on vertical conductivity is unique for low-angle twisted 2D van der Waals materials and provides a strategy for designing and optimizing their electronic performance.
Collapse
Affiliation(s)
- Shuai Zhang
- AML, CNMM, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
| | - Aisheng Song
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
| | - Lingxiu Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Chengxin Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Lei Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
| | - Yuan Hou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Tianbao Ma
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
| | - Xi-Qiao Feng
- AML, CNMM, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
| | - Qunyang Li
- AML, CNMM, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
| |
Collapse
|