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Qu Y, Xu H, Hu J, Wang F, Liu Y. Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain. Sci Rep 2024; 14:9414. [PMID: 38658733 PMCID: PMC11043405 DOI: 10.1038/s41598-024-60190-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 04/19/2024] [Indexed: 04/26/2024] Open
Abstract
The h-BN/diamond mix-dimensional heterostructure has broad application prospects in the fields of optoelectronic devices and power electronic devices. In this paper, the electronic properties and band offsets of hexagonal boron nitride (h-BN)/(H, O, F, OH)-diamond (111) heterostructures were studied by first-principles calculations under biaxial strain. The results show that different terminals could significantly affect the interface binding energy and charge transfer of h-BN/diamond heterostructure. All heterostructures exhibited semiconductor properties. The h-BN/(H, F)-diamond systems were indirect bandgap, while h-BN/(O, OH)-diamond systems were direct bandgap. In addition, the four systems all formed type-II heterostructures, among which h-BN/H-diamond had the largest band offset, indicating that the system was more conducive to the separation of electrons and holes. Under biaxial strain the bandgap values of the h-BN/H-diamond system decreased, and the band type occurred direct-indirect transition. The bandgap of h-BN/(O, F, OH)-diamond system increased linearly in whole range, and the band type only transformed under large strain. On the other hand, biaxial strain could significantly change the band offset of h-BN/diamond heterostructure and promote the application of this heterostructure in different fields. Our work provides theoretical guidance for the regulation of the electrical properties of h-BN/diamond heterostructures by biaxial strain.
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Affiliation(s)
- Yipu Qu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
| | - Hang Xu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China
| | - Jiping Hu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China
| | - Fang Wang
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Research Institute of Industrial Technology Co. Ltd, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Zhengzhou Way Do Electronics Co. Ltd, Zhengzhou, 450001, Henan, People's Republic of China.
| | - Yuhuai Liu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Research Institute of Industrial Technology Co. Ltd, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Zhengzhou Way Do Electronics Co. Ltd, Zhengzhou, 450001, Henan, People's Republic of China.
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Xu Y, Zhang P, Zhang A, Yin M, Wang F, Liou JJ, Liu Y. Performance improvement of nitride semiconductor-based deep-ultraviolet laser diodes with superlattice cladding layers. Eur Phys J D At Mol Opt Phys 2022; 76:183. [PMID: 36249893 PMCID: PMC9543930 DOI: 10.1140/epjd/s10053-022-00506-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 09/14/2022] [Indexed: 06/16/2023]
Abstract
A deep-ultraviolet (DUV) laser diode (LD) consisting of specifically designed cladding layers involving superlattice nitride alloy has been proposed. Simulation studies of different cladding layers were carried out using Crosslight software. It was found that the proposed structure effectively suppresses the leakage of the optical field from the active region and the optical confinement coefficient is 1.45 times higher than that of the conventional structure. The proposed structure has a significant increase in laser power with a low threshold current. Moreover, the introduction of novel cladding layer suppresses the electron and hole leakage from the multiple quantum well (MQW) region, which provides an attractive solution for increasing the stimulated recombination rate in the MQW region leading to the improvement in the performance of the DUV LD.
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Affiliation(s)
- Yuan Xu
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
| | - Pengfei Zhang
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
| | - Aoxiang Zhang
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
| | - Mengshuang Yin
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
| | - Fang Wang
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
- Research Institute of Sensors, Zhengzhou University, Zhengzhou, 450001 China
- Zhengzhou Way Do Electronics Technology Co. Ltd., Zhengzhou, 450001 China
- Industrial Technology Research Institute Co. Ltd., Zhengzhou University, Zhengzhou, 450001 China
| | - Juin. J. Liou
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
- Research Institute of Sensors, Zhengzhou University, Zhengzhou, 450001 China
- Industrial Technology Research Institute Co. Ltd., Zhengzhou University, Zhengzhou, 450001 China
| | - Yuhuai Liu
- National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, 450001 China
- Research Institute of Sensors, Zhengzhou University, Zhengzhou, 450001 China
- Zhengzhou Way Do Electronics Technology Co. Ltd., Zhengzhou, 450001 China
- Industrial Technology Research Institute Co. Ltd., Zhengzhou University, Zhengzhou, 450001 China
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