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Xie Z, Xiao D, Yu Q, Wang Y, Liao H, Zhang T, Liu P, Xu L. Fabrication of Multifunctional Silylated GO/FeSiAl Epoxy Composites: A Heat Conducting Microwave Absorber for 5G Base Station Packaging. Materials (Basel) 2023; 16:7511. [PMID: 38138659 PMCID: PMC10744416 DOI: 10.3390/ma16247511] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 11/27/2023] [Accepted: 11/29/2023] [Indexed: 12/24/2023]
Abstract
A multifunctional microwave absorber with high thermal conductivity for 5G base station packaging comprising silylated GO/FeSiAl epoxy composites were fabricated by a simple solvent-handling method, and its microwave absorption properties and thermal conductivity were presented. It could act as an applicable microwave absorber for highly integrated 5G base station packaging with 5G antennas within a range of operating frequency of 2.575-2.645 GHz at a small thickness (2 mm), as evident from reflection loss with a maximum of -48.28 dB and an effective range of 3.6 GHz. Such a prominent microwave absorbing performance results from interfacial polarization resonance attributed to a nicely formed GO/FeSiAl interface through silylation. It also exhibits a significant enhanced thermal conductivity of 1.6 W/(mK) by constructing successive thermal channels.
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Affiliation(s)
- Zhuyun Xie
- Centre of Chip Chemistry, Huangpu Institution of Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510663, China; (Z.X.); (D.X.); (Q.Y.); (Y.W.); (H.L.)
| | - Dehai Xiao
- Centre of Chip Chemistry, Huangpu Institution of Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510663, China; (Z.X.); (D.X.); (Q.Y.); (Y.W.); (H.L.)
| | - Qin Yu
- Centre of Chip Chemistry, Huangpu Institution of Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510663, China; (Z.X.); (D.X.); (Q.Y.); (Y.W.); (H.L.)
| | - Yuefeng Wang
- Centre of Chip Chemistry, Huangpu Institution of Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510663, China; (Z.X.); (D.X.); (Q.Y.); (Y.W.); (H.L.)
| | - Hanyi Liao
- Centre of Chip Chemistry, Huangpu Institution of Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510663, China; (Z.X.); (D.X.); (Q.Y.); (Y.W.); (H.L.)
| | - Tianzhan Zhang
- College of Material Science and Engineering, Jilin Jianzhu University, Changchun 130119, China;
| | - Peijiang Liu
- Reliability Physics and Application Technology of Electronic Component Key Laboratory, The Fifth Electronics Research Institute of the Ministry of Information Industry, Guangzhou 510610, China
| | - Liguo Xu
- College of Light Chemical Industry and Materials Engineering, Shunde Polytechnic, Foshan 528333, China
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