Yu IS, Chang CP, Yang CP, Lin CT, Ma YR, Chen CC. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.
Nanoscale Res Lett 2014;
9:682. [PMID:
25593560 PMCID:
PMC4275119 DOI:
10.1186/1556-276x-9-682]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/02/2014] [Accepted: 12/12/2014] [Indexed: 06/04/2023]
Abstract
In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.
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