A comprehensive calibration of integrated magnetron sputtering and plasma enhanced chemical vapor deposition for rare-earth doped thin films

A new integrated deposition system taking advantage of magnetron sputtering and electron cyclotron-plasma enhanced chemical vapour deposition (IMS ECR-PECVD) is presented that mitigates the drawbacks of each fabrication system. This tailor-made system provides users with highly homogeneous and pure thin films with less undesired hydrogen and well-controlled rare-earth concentration compared to existing methods of rare-earth doping, such as metalorganic powders, sputtering, and ion implantation. We established the first comprehensive report on the deposition parameters of argon flow and sputtering power to achieve desired rare-earth concentrations in a wide composition range of terbium (Tb) doped-silicon oxide (Tb:SiOx) matrices including silicon-rich (x < 2), oxygen-rich (x > 2), and stoichiometric silicon oxide (x = 2). The deposition parameters to fabricate crystalline structure (Tb2Si2O7) in oxygen-rich samples are reported where Tb ions are optically active. IMS ECR-PECVD pushes the solubility limit of the rare-earth dopant in silicon films to 17 at.% for the desired future nanophotonic devices.

Graphical Abstract

Supplementary Information

The online version contains supplementary material available at 10.1557/s43578-023-01207-2.

Graphene oxide-functionalized nanocomposites promote osteogenesis of human mesenchymal stem cells via enhancement of BMP-SMAD1/5 signaling pathway

Biomaterials that can harness the intrinsic osteogenic potential of stem cells offer a promising strategy to accelerate bone regeneration and repair. Previously, we had used methacrylated gelatin (GelMA)-based scaffolds to achieve bone formation from human mesenchymal stem cells (hMSCs). In this study, we aimed to further enhance hMSC osteogenesis by incorporating graphene oxide (GO)-based nanosheets into GelMA. In vitro results showed high viability and metabolic activities in hMSCs encapsulated in the newly developed nanocomposites. Incorporation of GO markedly increased mineralization within hMSC-laden constructs, which was further increased by replacing GO with silica-coated graphene oxide (SiGO). Mechanistic analysis revealed that the nanosheet enhanced the production, retention, and biological activity of endogenous bone morphogenetic proteins (BMPs), resulting in robust osteogenesis in the absence of exogenous osteoinductive growth factors. Specifically, the osteoinductive effect of the nanosheets was abolished by inhibiting the BMP signaling pathway with LDN-193189 treatment. The bone formation potential of the technology was further tested in vivo using a mouse subcutaneous implantation model, where hMSCs-laden GO/GelMA and SiGO/GelMA samples resulted in bone volumes 108 and 385 times larger, respectively, than the GelMA control group. Taken together, these results demonstrate the biological activity and mechanism of action of GO-based nanosheets in augmenting the osteogenic capability of hMSCs, and highlights the potential of leveraging nanomaterials such as GO and SiGO for bone tissue engineering applications.

A new silanizing agent tailored to surface bio-functionalization

Amino-terminated surfaces can be effectively obtained by means of silanizing agents, realizing surfaces suitable for the purification of biomarkers of several pathologies. Since the level of biomarkers, such as microRNAs and cell-free DNA, into circulation may be extremely low, new and ameliorated capturing molecules and protocols are highly required. In this work, a new silane, acetone-imine propyl trimethoxysilane (AIPTMS), is synthesized with a simple and elegant reaction, via the nucleophilic addition of the primary amino group to the carbonyl group of acetone. AIPTMS and APTMS were used to silanize silicon oxide surfaces, which were characterized chemically (XPS) and morphologically (AFM). The two types of surfaces were chemically similar, but behaved very differently both for surface morphology and functional properties. The AIPTMS-modified surface was indeed very smooth and homogeneous with respect to the APTMS-modified surface. Moreover, the AIPTMS surface captured larger amounts of nucleic acids almost immediately after preparation, while APTMS-based functional surfaces needed longer time to reach comparable efficiency. AIPTMS shows several advantages over standard aminosilanes, as it realizes a more homogeneous surface coverage that, in turn, produces an improved response towards the capture of nucleic acids. AIPTMS is a very promising reagent for the reliable and reproducible preparation of active biofunctional surfaces for the purification and analysis of circulating biomarkers.

Evaluation of tolerance of tubers Solanum tuberosum to silicа nanoparticles

In recent years, researches on the impact of nanometals on the state of soil ecosystems, including silicon, which is known to have a positive effect on plants under stressful conditions, have become relevant. The aim of this study was to assess the biological effects of nanoparticles (NP) of SiO₂ on the plant Solanum tuberosum. Testing of biological activity of NP SiO₂ on potato tubers was carried out on the example of five concentrations of metal increasing exponentially (0.03, 0.09, 0.18, 0.21, and 0.36 g/kg of potatoes) and control (without processing of NP SiO₂). We have shown that on the 21st day of the experiment after tuber treatment, the average mass of tuber in concentrations 0.18 and 0.21 g/kg of NP SiO₂ increased by 6.6% and 2.2%, respectively; stimulation of root length by 27.8-21.0%, the length of sprouts increased to 55.3%, and at a concentration of 0.36 g/kg on the 14th and 45th days, there was a maximum accumulation of Si in different parts of the plants. Analysis of chlorophyll content in the sprouts Solanum tuberosum showed that concentrations of nanoform SiO₂ 0.03-0.21 g/kg chlorophyll were higher than control by 48.8% and content of carotenoids by 29.7%. According to the results of field studies, the maximum mass of potato stems and tubers was observed at concentrations of 0.09 g/kg and 0.18 g/kg NP SiO₂, which confirmed the absence of toxic properties of NP SiO₂. The absence of the toxic effect of the investigated range of concentrations of NP SiO₂ from 0.03 to 0.36 g/kg was also confirmed by electrophoretic mobility of plant DNA molecules after incubation with silicon nanoparticles in vitro.

Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

This letter presents dual functions including selector and memory switching in a V/SiO_x/AlO_y/p⁺⁺Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VO_x layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiO_y layer. 1.5-nm-thick AlO_y layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.

Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Physical and chemical mechanisms in oxide-based resistance random access memory

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Serum protein layers on parylene-C and silicon oxide: effect on cell adhesion

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We studied how cell adhesion is affected by serum protein adsorbed on parylene-C.

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Serum proteins form distinct layers when adsorbed onto parylene-C or silicon oxide.

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Biosensing technique elucidates contrasting protein layer densities and thicknesses.

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Fibronectin supports cell adhesion on both surfaces.

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Albumin outcompetes fibronectin on parylene-C and vice versa on silicon oxide.

Among the range of materials used in bioengineering, parylene-C has been used in combination with silicon oxide and in presence of the serum proteins, in cell patterning. However, the structural properties of adsorbed serum proteins on these substrates still remain elusive. In this study, we use an optical biosensing technique to decipher the properties of fibronectin (Fn) and serum albumin adsorbed on parylene-C and silicon oxide substrates. Our results show the formation of layers with distinct structural and adhesive properties. Thin, dense layers are formed on parylene-C, whereas thicker, more diffuse layers are formed on silicon oxide. These results suggest that Fn acquires a compact structure on parylene-C and a more extended structure on silicon oxide. Nonetheless, parylene-C and silicon oxide substrates coated with Fn host cell populations that exhibit focal adhesion complexes and good cell attachment. Albumin adopts a deformed structure on parylene-C and a globular structure on silicon oxide, and does not support significant cell attachment on either surface. Interestingly, the co-incubation of Fn and albumin at the ratio found in serum, results in the preferential adsorption of albumin on parylene-C and Fn on silicon oxide. This finding is supported by the exclusive formation of focal adhesion complexes in differentiated mouse embryonic stem cells (CGR8), cultured on Fn/albumin coated silicon oxide, but not on parylene-C. The detailed information provided in this study on the distinct properties of layers of serum proteins on substrates such as parylene-C and silicon oxide is highly significant in developing methods for cell patterning.