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Cao S, Zhao Y, Feng S, Zuo Y, Zhang L, Cheng B, Li C. Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes. Nanoscale Res Lett 2019; 14:3. [PMID: 30607636 PMCID: PMC6318157 DOI: 10.1186/s11671-018-2827-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/01/2018] [Accepted: 12/06/2018] [Indexed: 06/09/2023]
Abstract
Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.
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Affiliation(s)
- Siyu Cao
- School of Science, Minzu University of China, Beijing, 100081 China
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Yue Zhao
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Shuai Feng
- School of Science, Minzu University of China, Beijing, 100081 China
| | - Yuhua Zuo
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Lichun Zhang
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025 China
| | - Buwen Cheng
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Chuanbo Li
- School of Science, Minzu University of China, Beijing, 100081 China
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
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