1
|
Liao Y, Chen C, Yin D, Cai Y, He R, Zhang M. Improved Na +/K + Storage Properties of ReSe 2-Carbon Nanofibers Based on Graphene Modifications. Nanomicro Lett 2019; 11:22. [PMID: 34137959 PMCID: PMC7770771 DOI: 10.1007/s40820-019-0248-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2018] [Accepted: 02/01/2019] [Indexed: 05/23/2023]
Abstract
Rhenium diselenide (ReSe2) has caused considerable concerns in the field of energy storage because the compound and its composites still suffer from low specific capacity and inferior cyclic stability. In this study, ReSe2 nanoparticles encapsulated in carbon nanofibers were synthesized successfully with simple electrospinning and heat treatment. It was found that graphene modifications could affect considerably the microstructure and electrochemical properties of ReSe2-carbon nanofibers. Accordingly, the modified compound maintained a capacity of 227 mAh g-1 after 500 cycles at 200 mA g-1 for Na+ storage, 230 mAh g-1 after 200 cycles at 200 mA g-1, 212 mAh g-1 after 150 cycles at 500 mA g-1 for K+ storage, which corresponded to the capacity retention ratios of 89%, 97%, and 86%, respectively. Even in Na+ full cells, its capacity was maintained to 82% after 200 cycles at 1C (117 mA g-1). The superior stability of ReSe2-carbon nanofibers benefitted from the extremely weak van der Waals interactions and large interlayer spacing of ReSe2, in association with the role of graphene-modified carbon nanofibers, in terms of the shortening of electron/ion transport paths and the improvement of structural support. This study may provide a new route for a broadened range of applications of other rhenium-based compounds.
Collapse
Affiliation(s)
- Yusha Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, People's Republic of China
| | - Changmiao Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, People's Republic of China
| | - Dangui Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, People's Republic of China
| | - Yong Cai
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, People's Republic of China
| | - Rensheng He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, People's Republic of China.
| | - Ming Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, People's Republic of China.
| |
Collapse
|