1
|
Winkler R, Zintler A, Recalde-Benitez O, Jiang T, Nasiou D, Adabifiroozjaei E, Schreyer P, Kim T, Piros E, Kaiser N, Vogel T, Petzold S, Alff L, Molina-Luna L. Texture Transfer in Dielectric Layers via Nanocrystalline Networks: Insights from in Situ 4D-STEM. Nano Lett 2024; 24:2998-3004. [PMID: 38319977 DOI: 10.1021/acs.nanolett.3c03941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Transition metal oxide dielectric layers have emerged as promising candidates for various relevant applications, such as supercapacitors or memory applications. However, the performance and reliability of these devices can critically depend on their microstructure, which can be strongly influenced by thermal processing and substrate-induced strain. To gain a more in-depth understanding of the microstructural changes, we conducted in situ transmission electron microscopy (TEM) studies of amorphous HfO2 dielectric layers grown on highly textured (111) substrates. Our results indicate that the minimum required phase transition temperature is 180 °C and that the developed crystallinity is affected by texture transfer. Using in situ TEM and 4D-STEM can provide valuable insights into the fundamental mechanisms underlying the microstructural evolution of dielectric layers and could pave the way for the development of more reliable and efficient devices for future applications.
Collapse
Affiliation(s)
- Robert Winkler
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Alexander Zintler
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Oscar Recalde-Benitez
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Tianshu Jiang
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Déspina Nasiou
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Esmaeil Adabifiroozjaei
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Philipp Schreyer
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Taewook Kim
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Eszter Piros
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Nico Kaiser
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Tobias Vogel
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Stefan Petzold
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Lambert Alff
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Leopoldo Molina-Luna
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| |
Collapse
|
2
|
MacLaren I, Frutos-Myro E, Zeltmann S, Ophus C. A method for crystallographic mapping of an alpha-beta titanium alloy with nanometre resolution using scanning precession electron diffraction and open-source software libraries. J Microsc 2024. [PMID: 38353362 DOI: 10.1111/jmi.13275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Revised: 12/21/2023] [Accepted: 01/30/2024] [Indexed: 02/21/2024]
Abstract
An approach for the crystallographic mapping of two-phase alloys on the nanoscale using a combination of scanned precession electron diffraction and open-source python libraries is introduced in this paper. This method is demonstrated using the example of a two-phase α/β titanium alloy. The data were recorded using a direct electron detector to collect the patterns, and recently developed algorithms to perform automated indexing and analyse the crystallography from the results. Very high-quality mapping is achieved at a 3 nm step size. The results show the expected Burgers orientation relationships between the α laths and β matrix, as well as the expected misorientations between α laths. A minor issue was found that one area was affected by 180° ambiguities in indexing occur due to this area being aligned too close to a zone axis of the α with twofold projection symmetry (not present in 3D) in the zero-order Laue Zone, and this should be avoided in data acquisition in the future. Nevertheless, this study demonstrates a good workflow for the analysis of nanocrystalline two- or multi-phase materials, which will be of widespread use in analysing two-phase titanium and other systems and how they evolve as a function of thermomechanical treatments.
Collapse
Affiliation(s)
- Ian MacLaren
- School of Physics and Astronomy, University of Glasgow, Glasgow, UK
| | - Enrique Frutos-Myro
- School of Physics and Astronomy, University of Glasgow, Glasgow, UK
- School of Engineering, University of Glasgow, Glasgow, UK
| | - Steven Zeltmann
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, USA
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York, USA
| | - Colin Ophus
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, USA
| |
Collapse
|
3
|
Vogel T, Zintler A, Kaiser N, Guillaume N, Lefèvre G, Lederer M, Serra AL, Piros E, Kim T, Schreyer P, Winkler R, Nasiou D, Olivo RR, Ali T, Lehninger D, Arzumanov A, Charpin-Nicolle C, Bourgeois G, Grenouillet L, Cyrille MC, Navarro G, Seidel K, Kämpfe T, Petzold S, Trautmann C, Molina-Luna L, Alff L. Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation. ACS Nano 2022; 16:14463-14478. [PMID: 36113861 PMCID: PMC9527794 DOI: 10.1021/acsnano.2c04841] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO2-, HfZrO2-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. With this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.
Collapse
Affiliation(s)
- Tobias Vogel
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Alexander Zintler
- Advanced
Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Nico Kaiser
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | | | | | - Maximilian Lederer
- Fraunhofer
IMPS, Center Nanoelectronic Technologies
(CNT), 01109 Dresden, Germany
| | | | - Eszter Piros
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Taewook Kim
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Philipp Schreyer
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Robert Winkler
- Advanced
Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Déspina Nasiou
- Advanced
Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | | | - Tarek Ali
- Fraunhofer
IMPS, Center Nanoelectronic Technologies
(CNT), 01109 Dresden, Germany
| | - David Lehninger
- Fraunhofer
IMPS, Center Nanoelectronic Technologies
(CNT), 01109 Dresden, Germany
| | - Alexey Arzumanov
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | | | | | | | | | | | - Konrad Seidel
- Fraunhofer
IMPS, Center Nanoelectronic Technologies
(CNT), 01109 Dresden, Germany
| | - Thomas Kämpfe
- Fraunhofer
IMPS, Center Nanoelectronic Technologies
(CNT), 01109 Dresden, Germany
| | - Stefan Petzold
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Christina Trautmann
- GSI
Helmholtzzentrum
fuer Schwerionenforschung, 64291 Darmstadt, Germany
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
| | - Leopoldo Molina-Luna
- Advanced
Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Lambert Alff
- Advanced
Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| |
Collapse
|
4
|
Vogel T, Zintler A, Kaiser N, Guillaume N, Lefèvre G, Lederer M, Serra AL, Piros E, Kim T, Schreyer P, Winkler R, Nasiou D, Olivo RR, Ali T, Lehninger D, Arzumanov A, Charpin-Nicolle C, Bourgeois G, Grenouillet L, Cyrille MC, Navarro G, Seidel K, Kämpfe T, Petzold S, Trautmann C, Molina-Luna L, Alff L. Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation. ACS Nano 2022; 16:14463-14478. [PMID: 36113861 DOI: 10.48328/tudatalib-896] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO2-, HfZrO2-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. With this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.
Collapse
Affiliation(s)
- Tobias Vogel
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Alexander Zintler
- Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Nico Kaiser
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | | | | | - Maximilian Lederer
- Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
| | | | - Eszter Piros
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Taewook Kim
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Philipp Schreyer
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Robert Winkler
- Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Déspina Nasiou
- Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | | | - Tarek Ali
- Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
| | - David Lehninger
- Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
| | - Alexey Arzumanov
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | | | | | | | | | | | - Konrad Seidel
- Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
| | - Thomas Kämpfe
- Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
| | - Stefan Petzold
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Christina Trautmann
- GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt, Germany
- Institute of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
| | - Leopoldo Molina-Luna
- Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| | - Lambert Alff
- Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
| |
Collapse
|