Ding M, Xie B, Lv M, Lu Z. Effects of O
2/Ar Ratio on Preparation and Dielectric Properties of CaZrO
3 Films by Radio Frequency (RF) Magnetron Sputtering.
Materials (Basel) 2024;
17:1120. [PMID:
38473591 DOI:
10.3390/ma17051120]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 02/23/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
CaZrO3 (CZO) thin films were deposited on Pt/Ti/SiO2/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O2 partial pressure in the flow ratio of O2/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O2/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO3 with a small amount of Ca0.2Zr0.8O1.8. The main crystal phase was Ca0.2Zr0.8O1.8 when the film was deposited under an O2/Ar ratio of 40:10. The annealed film with a 40:40 O2/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10-7 A/cm2 at 30 V with an ohmic conduction mechanism.
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