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Tian Y, Zeng X, Xing Y, Chen J, Deng S, She J, Liu F. High-Performance Planar Field-Emission Photodetector of Monolayer Tungsten Disulfide with Microtips. Small 2023:e2304233. [PMID: 37616506 DOI: 10.1002/smll.202304233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2023] [Revised: 07/30/2023] [Indexed: 08/26/2023]
Abstract
Monolayer tungsten disulfide (ML WS2 ) is believed as an ideal photosensitive material due to its small direct bandgap, large exciton/trion binding energy, high carrier mobility, and considerable quantum conversion efficiency. Compared with other photosensitive devices, planar field emission (FE)-type photodetectors with a full-plane structure should simultaneously have rapider switching speed and lower power consumption. In this work, ML WS2 microtips are fabricated by electron beam lithography (EBL) way and used to construct a planar FE-type photodetector. By optimization design, ML WS2 with three microtips can exhibit the maximum current density as high as 52 A cm-2 (@300 V µm-1 ), and the largest photoresponsivity is up to 6.8 × 105 A W-1 under green light irradiation, superior to that of many other ML transition metal dichalcogenide (TMDC) detectors. More interestingly, ML WS2 devices with microtips can effectively solve the contradictory problem between large photoresponsivity and rapid switching speed. The excellent photoresponse performances of ML WS2 with microtips should be attributed to their high carrier mobility, sharp emission edge, ultrahigh quantum yield, and unique planar FE device structure. Our research may shed new light on exploring the fabrication technology and photosensitive mechanism of two dimensional (2D) material-based planar FE photodetectors.
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Affiliation(s)
- Yan Tian
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Xiangjun Zeng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Yang Xing
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Juncong She
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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Zhang P, Cheng N, Li M, Zhou B, Bian C, Wei Y, Wang X, Jiang H, Bao L, Lin Y, Hu Z, Du Y, Gong Y. Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS 2. ACS Appl Mater Interfaces 2020; 12:18650-18659. [PMID: 32237720 DOI: 10.1021/acsami.9b22004] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The physical and chemical properties of transition metal dichalcogenides can be effectively tuned by doping or alloying, which is essential for their practical applications. However, the microstructure evolutions and their effects on the physical properties induced by alloying from hetero-atoms with different outermost electronic structures are still unclear. Here, we synthesized Nb-substituted WS2 with various Nb concentrations showing unusual changes of optical behaviors and continuous electrical polarity reversal. The fully softened Raman mode, rapidly quenched photoluminescence, and severe electron scattering can be attributed to the combined effects of charge doping and lattice strain caused by atomic Nb doping. Three types of substitution modes of Nb atoms in the WS2 lattice were observed directly from atomic-resolution scanning transmission electron microscopy. Density functional theory calculations further confirm the role of lattice strain in the evolutions of optical and electrical characteristics. With increasing Nb concentration, n-type, ambipolar, and p-type field-effect transistors can be achieved, indicating the capacity of this doping method to engineer the properties of two-dimensional materials for future electronic applications.
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Affiliation(s)
- Peng Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Ningyan Cheng
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovation Materials (AIIM), University of Wollongong, Wollongong, New South Wales 2522, Australia
| | - Mengjiao Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Bin Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Ce Bian
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yi Wei
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Xingguo Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Huaning Jiang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523803, P. R. China
| | - Yenfu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yi Du
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovation Materials (AIIM), University of Wollongong, Wollongong, New South Wales 2522, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 100191, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
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Guo WP, Liang WY, Cheng CW, Wu WL, Wang YT, Sun Q, Zu S, Misawa H, Cheng PJ, Chang SW, Ahn H, Lin MT, Gwo S. Chiral Second-Harmonic Generation from Monolayer WS 2/Aluminum Plasmonic Vortex Metalens. Nano Lett 2020; 20:2857-2864. [PMID: 32163291 DOI: 10.1021/acs.nanolett.0c00645] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional spiral plasmonic structures have emerged as a versatile approach to generate near-field vortex fields with tunable topological charges. We demonstrate here a far-field approach to observe the chiral second-harmonic generation (SHG) at designated visible wavelengths from a single plasmonic vortex metalens. This metalens comprises an Archimedean spiral slit fabricated on atomically flat aluminum epitaxial film, which allows for precise tuning of plasmonic resonances and subsequent transfer of two-dimensional materials on top of the spiral slit. The nonlinear optical measurements show a giant SHG circular dichroism. Furthermore, we have achieved an enhanced chiral SHG conversion efficiency (about an order of magnitude greater than the bare aluminum lens) from monolayer tungsten disulfide (WS2)/aluminum metalens, which is designed at the C-exciton resonance of WS2. Since the C-exciton is not a valley exciton, the enhanced chiral SHG in this hybrid system originates from the plasmonic vortex field-enhanced SHG under the optical spin-orbit interaction.
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Affiliation(s)
- Wan-Ping Guo
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Yun Liang
- Department of Photonics, College of Electrical and Computer Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
| | - Chang-Wei Cheng
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Wei-Lin Wu
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Yen-Ting Wang
- Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan
| | - Quan Sun
- Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
| | - Shuai Zu
- Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
| | - Hiroaki Misawa
- Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
- Center for Emergent Functional Matter Science, National Chiao-Tung University, Hsinchu 30010, Taiwan
| | - Pi-Ju Cheng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Shu-Wei Chang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Hyeyoung Ahn
- Department of Photonics, College of Electrical and Computer Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
| | - Minn-Tsong Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Shangjr Gwo
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan
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