On-Chip Modification of Titanium Electrothermal Characteristics by Joule Heating: Application to Terahertz Microbolometer

This study demonstrates the conversion of metallic titanium (Ti) to titanium oxide just by conducting electrical current through Ti thin film in vacuum and increasing the temperature by Joule heating. This led to the improvement of electrical and thermal properties of a microbolometer. A microbolometer with an integrated Ti thermistor and heater width of 2.7 µm and a length of 50 µm was fabricated for the current study. Constant-voltage stresses were applied to the thermistor wire to observe the effect of the Joule heating on its properties. Thermistor resistance ~14 times the initial resistance was observed owing to the heating. A negative large temperature coefficient of resistance (TCR) of -0.32%/K was also observed owing to the treatment, leading to an improved responsivity of ~4.5 times from devices with untreated Ti thermistors. However, this does not improve the noise equivalent power (NEP), due to the increased flicker noise. Microstructural analyses with transmission electron microscopy (TEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) confirm the formation of a titanium oxide (TiOx) semiconducting phase on the Ti phase (~85% purity) deposited initially, further to the heating. Formation of TiOx during annealing could minimize the narrow width effect, which we reported previously in thin metal wires, leading to enhancement of responsivity.

The Effect of Sensor Dimensions on the Performance of Flexible Hot Film Shear Stress Sensors

This paper presents a study to determine the effect of sensor dimensions (length, width, and thickness) on the performance of flexible hot film shear stress sensors. The sensing component of a hot film sensor is nickel thermistor, and the flexible substrate material is polyimide. Several groups of flexible hot film shear stress sensors with different lengths, widths, and thicknesses were studied. The temperature coefficient of resistance (TCR) was measured. The TCR increased slightly with increasing thickness. The frequency response (time constant) of the flexible hot film shear stress sensor was obtained by the square wave, while the sensitivity was tested in a wind tunnel. The study found that as the sensor length was shortened, the frequency response increased, and the sensitivity decreased.

Experiments on Temperature Changes of Microbolometer under Blackbody Radiation and Predictions Using Thermal Modeling by COMSOL Multiphysics Simulator

In this study, we study a heat transfer model, with the surface of the microbolometer device receiving radiation from blackbody constructed using a COMSOL Multiphysics simulator. We have proposed three kinds of L-type 2-leg and 4-leg with the pixel pitch of 35 μm based on vanadium oxide absorbent membrane sandwiched with top passivated and bottom Si₃N₄ supporting films, respectively. Under the blackbody radiation, the surface temperature changes and distributions of these samples are simulated and analyzed in detail. The trend of change of the temperature dependent resistance of the four kinds of bolometer devices using the proposed heat transfer model is consistent with the actual results of the change of resistance of 4 samples irradiated with 325 K blackbody located in the front distance of 5 cm. In this paper, ΔT indicates the averaged differences of the top temperature on the suspended membrane and the lowest temperature on the post of legs of the microbolometers. It is shown that ΔT ≈ 17 mK is larger in nominal 2-leg microbolometer device than that of 4-leg one and of 2-leg with 2 μm × 2 μm central square hole and two 7.5 μm × 2 μm slits in suspended films. Additionally, only ΔT ≈ 5 mK with 4-leg microbolometer device under the same radiated energy of 325 K blackbody results from the larger total thermal conductance.