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Lv W, Wang H, Jia L, Tang X, Lin C, Yuwen L, Wang L, Huang W, Chen R. Tunable Nonvolatile Memory Behaviors of PCBM-MoS 2 2D Nanocomposites through Surface Deposition Ratio Control. ACS Appl Mater Interfaces 2018; 10:6552-6559. [PMID: 29377670 DOI: 10.1021/acsami.7b16878] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Efficient preparation of single-layer two-dimensional (2D) transition metal dichalcogenides, especially molybdenum disulfide (MoS2), offers readily available 2D surface in nanoscale to template various materials to form nanocomposites with van der Waals heterostructures (vdWHs), opening up a new dimension for the design of functional electronic and optoelectronic materials and devices. Here, we report the tunable memory properties of the facilely prepared [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)-MoS2 nanocomposites in a conventional diode device structure, where the vdWHs dominate the electric characteristics of the devices for various memory behaviors depending on different surface deposition ratios of PCBM on MoS2 nanosheets. Both nonvolatile WORM and flash memory devices have been realized using the new developed PCBM-MoS2 2D composites. Specially, the flash characteristic devices show rewritable resistive switching with low switching voltages (∼2 V), high current on/off ratios (∼3 × 102), and superior electrical bistability (>104 s). This research, through successfully allocating massive vdWHs on the MoS2 surface for organic/inorganic 2D nanocomposites, illustrates the great potential of 2D vdWHs in rectifying the electronic properties for high-performance memory devices and paves a way for the design of promising 2D nanocomposites with electronically active vdWHs for advanced device applications.
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Affiliation(s)
- Wenzhen Lv
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Honglei Wang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Linlin Jia
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Xingxing Tang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Cheng Lin
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Lihui Yuwen
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Lianhui Wang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Runfeng Chen
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
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