Grundmann M, Karsthof R, von Wenckstern H. Interface recombination current in type II heterostructure bipolar diodes.
ACS Appl Mater Interfaces 2014;
6:14785-14789. [PMID:
25136986 DOI:
10.1021/am504454g]
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Abstract
Wide-gap semiconductors are often unipolar and can form type II bipolar heterostructures with large band discontinuities. We present such diodes with very high rectification larger than 1 × 10(10). The current is assumed to be entirely due to interface recombination. We derive the ideality factor for both symmetric and asymmetric diodes and find it close to 2 in agreement with experimental data from NiO/ZnO and CuI/ZnO type II diodes. The comparison with experimental results shows that the actual interface recombination rate is orders of magnitude smaller than its possible maximum value.
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