Regulating excitonic effects in non-oxide based XPSe3 (X = Cd, Zn) monolayers towards enhanced photocatalysis for overall water splitting

The non-oxide 2D materials have garnered considerable interest due to their potential utilization as photocatalysts, which offer a superior substitute to metal-oxide-based photocatalysts. This study investigates the impact of the dielectric environment on the size and binding energy of excitons in atomically thin, experimentally synthesized semiconducting monolayers [XPSe₃, X = (Cd, Zn)] to address the critical problem of electron-hole recombination, which significantly hinders the efficiency of most photocatalysts. We employ a precise non-hydrogenic model surpassing the hydrogenic-based Mott-Wannier model. Our findings are among the first few demonstrations of an increase in exciton size (and decrease in exciton binding energy) as environmental screening increases. These findings have implications for photocatalytic water splitting and are not limited to metal phosphorus trichalcogenides, but can be applied to other classes of 2D materials as well. This work also compares metal-oxide photocatalysts, which have been the focus of much research over the past five decades, to non-oxide-based metal phosphorus trichalcogenide photocatalysts, which offer a superior alternative due to their ability to address issues such as light-harvesting inability in the visible spectrum and unwanted charge recombination centres. Furthermore, the implications of this study extend beyond photocatalysts and are significant for the design and development of next-generation optoelectronic devices that incorporate excitonic processes, such as solar cells, photodetectors, LEDs, etc.

Anisotropy in colossal piezoelectricity, giant Rashba effect and ultrahigh carrier mobility in Janus structures of quintuple Bi2X3(X = S, Se) monolayers

Due to their asymmetric structures, two-dimensional (2D) Janus materials have gained significant attention in research for their intriguing piezoelectric and spintronic properties. In the present work, Quintuple Bi2X3 (X = S, Se) monolayers (MLs) have been modified to create stable Janus Bi2X2Y (X ≠Y= S, Se) MLs that display piezoelectricity in both the planes along with Rashba effect. The out-of-plane piezoelectric constant (d33) is 41.18 (-173.14) pm/V, while the in-plane piezoelectric constant (d22) is 5.23 (6.21) pm/V for Janus Bi2S2Se (Bi2Se2S) ML. Including spin-orbit coupling (SOC) in the Janus MLs results in anisotropic giant Rashba spin splitting (RSS) at the Γ point in the valence band, with RSS proportional to d33. The Rashba constant along the Γ - K path, α_R^(Γ - K), is 3.30 (2.27) eVÅ, whereas along Γ - M, α_R^(Γ - M) is 3.58 (3.60) eVÅ for Janus Bi2S2Se (Bi2Se2S) ML. The MLs exhibit ultrahigh electron mobility (~ 5442 cm2V-1s-1) and have electron to hole mobility ratio of more than 2 due to their tiny electron-effective masses. The flexibility of the MLs allows for a signification alteration in its properties, like band gap, piezoelectric coefficient, and Rashba constant, via mechanical (biaxial) strain. For the MLs, bandgap and d33 value are enhanced with compressive strain. The d33 value of Janus Bi2Se2S reaches 4886.51 pm/V under compressive strain. The coexistence of anisotropic colossal out-of-plane piezoelectricity, giant RSS, and ultrahigh carrier mobilities in Janus Bi2S2Se and Bi2Se2S MLs showcase their tremendous prospects in nanoelectronic, piezotronics, and spintronics devices.

Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties

The new paradigm in electronics consists in realizing the seamless integration of many properties latent in nanomaterials, such as mechanical flexibility, strong spin-orbit coupling (Rashba spin splitting-RSS), and piezoelectricity. Taking cues from the pointers given on 1D ZnO nanowires (ACS Nano2018121811-20), the concept can be extended to multifunctional two-dimensional (2D) materials, which can serve as an ideal platform in next-generation electronics such as self-powered flexible piezo-spintronic device. However, a microscopically clear understanding reachable from the state-of-the-art density functional theory-based approaches is a prerequisite to advancing this research domain. Atomic-scale insights gained from meticulously performed scientific computations can firmly anchor the growth of this important research field, and that is of undeniable relevance from scientific and technological outlooks. This article reviews the scientific advance in understanding 2D materials hosting all the essential properties, i.e. flexibility, piezoelectricity, and RSS. Important 2D semiconducting monolayers that deserve a special mention, include monolayers of buckled MgX (X = S, Se, Te), CdTe, ZnTe, Janus structures of transition metal trichalcogenides, Janus tellurene and 2D perovskites. van Der Waals multilayers are also built to design multifunctional materials via modulation of the stacking sequence and interlayer coupling between the constituent layers. External electric field, strain engineering and charge doping are perturbations mainly used to tune the spintronic properties. Finally, the contact properties of these monolayers are also crucial for their actual implementation in electronic devices. The nature of the contacts, Schottky/Ohmic, needs to be carefully examined first as it controls the device's performance. In this regard, the rare occurrence of Ohmic contact in graphene/MgS van der Waals hetero bilayer has been presented in this review article.

Engineering Catalytically Active Sites by Sculpting Artificial Edges on MoS2 Basal Plane for Dinitrogen Reduction at a Low Overpotential

Engineering catalytically active sites have been a challenge so far and often relies on optimization of synthesis routes, which can at most provide quantitative enhancement of active facets, however, cannot provide control over choosing orientation, geometry and spatial distribution of the active sites. Artificially sculpting catalytically active sites via laser-etching technique can provide a new prospect in this field and offer a new species of nanocatalyst for achieving superior selectivity and attaining maximum yield via absolute control over defining their location and geometry of every active site at a nanoscale precision. In this work, a controlled protocol of artificial surface engineering is shown by focused laser irradiation on pristine MoS₂ flakes, which are confirmed as catalytic sites by electrodeposition of AuNPs. The preferential Au deposited catalytic sites are found to be electrochemically active for nitrogen adsorption and its subsequent reduction due to the S-vacancies rather than Mo-vacancy, as advocated by DFT analysis. The catalytic performance of Au-NR/MoS₂ shows a high yield rate of ammonia (11.43 × 10^-8  mol s^-1 cm^-2 ) at a potential as low as -0.1 V versus RHE and a notable Faradaic efficiency of 13.79% during the electrochemical nitrogen reduction in 0.1 m HCl.

Experimental and computational insights into luminescence in atomically precise bimetallic Au6-nCun(MPA)5 (n = 0-2) clusters

Bimetallic nanoclusters (NCs) have emerged as a new class of luminescent materials for potential applications in sensing, bio-imaging, and light-emitting diodes (LEDs). Here, we have synthesized gold-copper bimetallic nanoclusters (AuCu NCs) using a one-step co-reduction method and tuned the emission wavelength from 520 nm to 620 nm by changing the [Cu²⁺]/[Au³⁺] molar ratio. The quantum yield (QY) increases from 6% to 13% upon incorporation of the Cu atom in the Au NCs. MALDI-TOF mass spectrometric analysis reveals that the composition of the Au NCs is Au₆(MPA)₅, and the bimetallic nanocluster is Au₄Cu₂(MPA)₅, where 3-mercaptopropionic acid (MPA) is used as the capping ligand. Furthermore, we investigated the optimized structures of the as-synthesized NCs using density functional theory (DFT) along with analysis of the preferable adsorption sites using Fukui functions. We report the HOMO-LUMO gap, which is consistent with the experimentally observed red shift in the UV-Vis absorption features of the Au NCs upon copper doping. XPS studies suggest the formation of intermixing of states between the 5d orbitals of Au and the 3d orbitals of Cu in the AuCu NCs after incorporating Cu atoms into the Au NCs, which is corroborated by the DFT calculations on electronic charge transfer from the Cu to the Au atom in the NCs. The coupling between Au(I) and Cu(I) facilitates the formation of a low-lying mixed Au(I)-Cu(I) energy state. This study elaborates on the impact of Cu doping on the excited-state relaxation dynamics of AuCu NCs.

Nanocatalytic Interface to Decode the Phytovolatile Language for Latent Crop Diagnosis in Future Farms

Crop diseases cause the release of volatiles. Here, the use of an SnO₂-based chemoresistive sensor for early diagnosis has been attempted. Ionone is one of the signature volatiles released by the enzymatic and nonenzymatic cleavage of carotene at the latent stage of some biotic stresses. To our knowledge, this is the first attempt at sensing volatiles with multiple oxidation sites, i.e., ionone (4 oxidation sites), from the phytovolatile library, to derive stronger signals at minimum concentrations. Further, the sensitivity was enhanced on an interdigitated electrode by the addition of platinum as the dopant for a favorable space charge layer and for surface island formation for reactive interface sites. The mechanistic influence of oxygen vacancy formation was studied through detailed density functional theory (DFT) calculations and reactive oxygen-assisted enhanced binding through X-ray photoelectron spectroscopy (XPS) analysis.

Spin-Current Modulation in Hexagonal Buckled ZnTe and CdTe Monolayers for Self-Powered Flexible-Piezo-Spintronic Devices

The next-generation spintronic device demands the gated control of spin transport across the semiconducting channel through the replacement of the external gate voltage source by the piezo potential, as experimentally demonstrated in Zhu et al. ACS Nano, 2018, 12 (2), 1811-1820. Consequently, a high level of out-of-plane piezoelectricity together with a large Rashba spin splitting is sought after in semiconducting channel materials. Inspired by this experiment, a new hexagonal buckled two-dimensional (2D) semiconductor, ZnTe, and its iso-electronic partner, CdTe, are proposed herewith. These 2D materials show a strong spin-orbit coupling (SOC), which is evidenced by a large Rashba constant of 1.06 and 1.27 eV·Å, respectively, in ZnTe and CdTe monolayers. Moreover, these Rashba semiconductors exhibit a giant out-of-plane piezoelectric coefficient (d₃₃) = 88.68 and 172.61 pm/V, and can thereby generate a high piezo potential for gating purposes in spin field-effect transistors (spin-FETs). While the low elastic stiffness implies the mechanical flexibility or stretchability in these monolayers. The Rashba constants are found to be effectively modulated via external perturbations, such as strain and electric field. The wide band gap provides ample room for modulation in its electronic properties via external perturbations. Such scope is severely limited in previously reported narrow band gap Rashba semiconductors. The fascinating results found in this work indicate their great potential for applications in next-generation self-powered flexible-piezo-spintronic devices. Moreover, a new class of hexagonal buckled ZnX (X: S, Se, or Te) monolayers is proposed herein based on their previously synthesized bulk counterparts, while their electronic, mechanical, piezoelectric, and thermal properties have been thoroughly investigated using the state-of-art density functional theory (DFT).

Conflux of tunable Rashba effect and piezoelectricity in flexible magnesium monochalcogenide monolayers for next-generation spintronic devices

The coupling of piezoelectric properties with Rashba spin-orbit coupling (SOC) has proven to be the limit breaker that paves the way for a self-powered spintronic device (ACS Nano, 2018, 12, 1811-1820). For further advancement in next-generation devices, a new class of buckled, hexagonal magnesium-based chalcogenide monolayers (MgX; X = S, Se, Te) have been predicted which are direct band gap semiconductors satisfying all the stability criteria. The MgTe monolayer shows a strong SOC with a Rashba constant of 0.63 eV Å that is tunable to the extent of ±0.2 eV Å via biaxial strain. Also, owing to its broken inversion symmetry and buckling geometry, MgTe has a very large in-plane as well as out-of-plane piezoelectric coefficient. These results indicate its prospects for serving as a channel semiconducting material in self-powered piezo-spintronic devices. Furthermore, a prototype for a digital logic device can be envisioned using the ac pulsed technology via a perpendicular electric field. Heat transport is significantly suppressed in these monolayers as observed from their intrinsic low lattice thermal conductivity at room temperature: MgS (9.32 W m-1 K-1), MgSe (4.93 W m-1 K-1) and MgTe (2.02 W m-1 K-1). Further studies indicate that these monolayers can be used as photocatalytic materials for the simultaneous production of hydrogen and oxygen on account of having suitable band edge alignment and high charge carrier mobility. This work provides significant theoretical insights into both the fundamental and applied properties of these new buckled MgX monolayers, which are highly suitable for futuristic applications at the nanoscale in low-power, self-powered multifunctional electronic and spintronic devices and solar energy harvesting.

Group-IV(A) Janus dichalcogenide monolayers and their interfaces straddle gigantic shear and in-plane piezoelectricity

Inversion symmetry in the 1T-phase of pristine dichalcogenide monolayer MX2 (M = Ge, Sn; X = S, Se) is broken in their Janus structures, MXY (M = Ge, Sn; X ≠ Y = S, Se), which induces an in-plane piezoelectric coefficient, d22 = 4.09 (2.15) pm V-1 and a shear piezoelectric coefficient, d15 = 7.90 (13.68) pm V-1 in the GeSSe (SnSSe) monolayer. High flexibility arising from the small Young's modulus (60-70 N m-1) found in these Group-IV(A) Janus monolayers makes them suitable for large-scale strain engineering. Application of 7% uniaxial tensile strain increases d22 and d15 colossally to 267.07 pm V-1 and 702.34 pm V-1, respectively, thereby reaching the level of bulk piezoelectric perovskite materials. When the Janus GeSSe monolayers are stacked to form a van der Waals (vdW) homo-bilayer, d22 lies between 19.87 and 73.26 pm V-1, while d15 falls into the range between 83.01 and 604.34 pm V-1, depending on the stacking order. The chalcogen exchange energies and overall stabilities of the monolayers and bilayers confirm the feasibility of their experimental synthesis. Moreover, hole mobility in the GeSSe monolayer is greater than the electron mobility along its zigzag directions (μe = 883 cm2 V-1 s-1 and μh = 1134 cm2 V-1 s-1). Therefore, the semiconducting, flexible, and piezoelectric Janus GeSSe monolayer and bilayers are immensely promising for futuristic applications in energy harvesting, nanopiezotronic field-effect transistors, atomically thin sensors, shear/torsion actuators, transducers, self-powered circuits in nanorobotics, and electromechanical memory devices, and biomedical and other nanoelectronic applications.

Two-dimensional ultrathin van der Waals heterostructures of indium selenide and boron monophosphide for superfast nanoelectronics, excitonic solar cells, and digital data storage devices

Semiconducting indium selenide (InSe) monolayers have drawn a great deal of attention among all the chalcogenide two-dimensional materials on account of their high electron mobility; however, they suffer from low hole mobility. This inherent limitation of an InSe monolayer can be overcome by stacking it on top of a boron phosphide (BP) monolayer, where the complementary properties of BP can bring additional benefits. The electronic, optical, and external perturbation-dependent electronic properties of InSe/BP hetero-bilayers have been systematically investigated within density functional theory in anticipation of its cutting-edge applications. The InSe/BP heterostructure has been found to be an indirect semiconductor with an intrinsic type-II band alignment where the conduction band minimum (CBM) and valence band maximum (VBM) are contributed by the InSe and BP monolayers, respectively. Thus, the charge carrier mobility in the heterostructure, which is mainly derived from the BP monolayer, reaches as high as 12 × 10³ cm² V^-1 s^-1, which is very much desired in superfast nanoelectronics. The suitable bandgap accompanied by a very low conduction band offset between the donor and acceptor along with robust charge carrier mobility, and the mechanical and dynamical stability of the heterostructure attests its high potential for applications in solar energy harvesting and nanoelectronics. The solar to electrical power conversion efficiency (20.6%) predicted in this work surpasses the efficiencies reported for InSe based heterostructures, thereby demonstrating its superiority in solar energy harvesting. Moreover, the heterostructure transits from the semiconducting state (the OFF state) to the metallic state (the ON state) by the application of a small electric field (∼0.15 V Å^-1) which is brought about by the actual movement of the bands rather than via the nearly empty free electron gas (NFEG) feature. This thereby testifies to its potential for applications in digital data storage. Moreover, the heterostructure shows strong absorbance over a wide spectrum ranging from UV to the visible light of solar radiation, which will be of great utility in UV-visible light photodetectors.

Interfacial hybridization of Janus MoSSe and BX (X = P, As) monolayers for ultrathin excitonic solar cells, nanopiezotronics and low-power memory devices

In this work, we explored the interfacial two-dimensional (2D) physics and significant advancements in the application prospects of MoSSe monolayer when it is combined with a boron pnictide (BP, BAs) monolayer in a van der Waals heterostructure (vdWH) setup. The constructed vdWHs were found to be mechanically and dynamically stable, and they form type-II p-n heterojunctions. Thus, the photogenerated electron-hole pairs are spatially separated. In the BX/MoSSe vdWHs, the BX monolayer serves as excellent donor material for MoSSe, having an ideal donor band gap of ∼1.3 eV. The small value of the conduction band offset (CBO) between the individual monolayers in the vdWHs makes it an excellent candidate for solar energy harvesting in excitonic solar cells, where the power conversion efficiencies were calculated to be 22.97% (BP/MoSSe) and 20.86% (BAs/MoSSe). Also, more than four-fold enhancement in the out-of-plane piezoelectric coefficient (d₃₃) was observed in the MoSSe-based vdWH relative to that in the MoS₂-based vdWH owing to the intrinsic built-in vertical electric field in MoSSe. This is consistent with the out-of-plane piezoelectricity brought about by the alteration in symmetry at the metal-semiconductor Schottky junction, which has been observed experimentally [M.-M. Yang, Z.-D. Luo, Z. Mi, J. Zhao, S. P. E and M. Alexe, Nature, 2020, 584, 377-381]. The results obtained in this work provide useful insights into the design of nanomaterials for future applications in nano-optoelectronics, more efficient excitonic solar cells, and nanoelectromechanical systems (NEMS). Furthermore, this work demonstrates outstanding potential for the application of these vdWHs in superfast electronics, including low-power digital data storage and memory devices, where the tunnel current between the source and drain is effectively tunable using a normal electric field of small magnitude serving as the gate voltage.

Experimental and Theoretical Study into Interface Structure and Band Alignment of the Cu2Zn1-x Cd x SnS4 Heterointerface for Photovoltaic Applications

To improve the constraints of kesterite Cu₂ZnSnS₄ (CZTS) solar cell, such as undesirable band alignment at p-n interfaces, bandgap tuning, and fast carrier recombination, cadmium (Cd) is introduced into CZTS nanocrystals forming Cu₂Zn_1-x Cd _x SnS₄ through cost-effective solution-based method without postannealing or sulfurization treatments. A synergetic experimental-theoretical approach was employed to characterize and assess the optoelectronic properties of Cu₂Zn_1-x Cd _x SnS₄ materials. Tunable direct band gap energy ranging from 1.51 to 1.03 eV with high absorption coefficient was demonstrated for the Cu₂Zn_1-x Cd _x SnS₄ nanocrystals with changing Zn/Cd ratio. Such bandgap engineering in Cu₂Zn_1-x Cd _x SnS₄ helps in effective carrier separation at interface. Ultrafast spectroscopy reveals a longer lifetime and efficient separation of photoexcited charge carriers in Cu₂CdSnS₄ (CCTS) nanocrystals compared to that of CZTS. We found that there exists a type-II staggered band alignment at the CZTS (CCTS)/CdS interface, from cyclic voltammetric (CV) measurements, corroborated by first-principles density functional theory (DFT) calculations, predicting smaller conduction band offset (CBO) at the CCTS/CdS interface as compared to the CZTS/CdS interface. These results point toward efficient separation of photoexcited carriers across the p-n junction in the ultrafast time scale and highlight a route to improve device performances.

Superhigh flexibility and out-of-plane piezoelectricity together with strong anharmonic phonon scattering induced extremely low lattice thermal conductivity in hexagonal buckled CdX (XS, Se) monolayers

Although CdX (X = S, Se) has been mostly studied in the field of photocatalysis, photovoltaics, their intrinsic properties, such as, mechanical, piezoelectric, electron and phonon transport properties have been completely overlooked in buckled CdX monolayers. Ultra-low lattice thermal conductivity [1.08 W m-1K-1(0.75 W m-1K-1)] and high p-type Seebeck coefficient [1300μV K-1(850μV K-1)] in CdS (CdSe) monolayers have been found in this work based on first-principles DFT coupled to semi-classical Boltzmann transport equations, combining both the electronic and phononic transport. The dimensionless thermoelectric figure of merit is calculated to be 0.78 (0.5) in CdS (CdSe) monolayers at room temperature, which is comparable to that of two-dimensional (2D) tellurene (0.8), arsenene and antimonene (0.8), indicating its great potential for applications in 2D thermoelectrics. Such a low lattice thermal conductivity arise from the participation of both acoustic [91.98% (89.22%)] and optical modes [8.02% (10.78%)] together with low Debye temperature [254 K (187 K)], low group velocity [4 km s-1(3 km s-1)] in CdS (CdSe) monolayers, high anharmonicity and short phonon lifetime. Substantial cohesive energy (∼4-5 eV), dynamical and mechanical stability of the monolayers substantiate the feasibility in synthesizing the single layers in experiments. The inversion symmetry broken along thezdirection causes out-of-plane piezoelectricity. |d33| ∼ 21.6 pm V-1, calculated in CdS monolayer is found to be the highest amongst structures having atomic-layer thickness. Superlow Young's modulus ∼41 N m-1(31 N m-1) in CdS (CdSe) monolayers, which is comparable to that of planar CdS (29 N m-1) and TcTe2(34 N m-1), is an indicator of its superhigh flexibility. Direct semiconducting band gap, high carrier mobility (∼500 cm2V-1s-1) and superhigh flexibility in CdX monolayers signify its gigantic potential for applications in ultrathin, stretchable and flexible nanoelectronics. The all-round properties can be synergistically combined together in futuristic applications in nano-piezotronics as well.

Ultra-low lattice thermal conductivity and giant phonon-electric field coupling in hafnium dichalcogenide monolayers

Phonons in crystalline solids are of utmost importance in governing its lattice thermal conductivity (k L). In this work, k L in hafnium (Hf) dichalcogenide monolayers has been investigated based on ab initio DFT coupled to linearized Boltzmann transport equation together with single-mode relaxation-time approximation. Ultra-low k L found in HfS2 (2.19 W m-1 K-1), HfSe2 (1.23 W m-1 K-1) and HfSSe (1.78 W m-1 K-1) monolayers at 300 K, is comparable to that of the state-of-art bulk thermoelectric materials, such as, Bi2Te3 (1.6 W m-1 K-1), PbTe (2.2 W m-1 K-1) and SnSe (2.6 W m-1 K-1). Gigantic longitudinal-transverse optical (LO-TO) splitting of up to 147.7 cm-1 is noticed at the Brillouin zone-centre (Γ-point), which is much higher than that in MoS2 single layer (∼2 cm-1). It is driven by the colossal phonon-electric field coupling arising from the domination of ionic character in the interatomic bonds and Born effective or dynamical charges as high as 7.4e on the Hf ions, which is seven times that on Mo in MoS2 single layer. Enhancement in k L occurs in HfS2 (2.19 to 4.1 W m-1 K-1), HfSe2 (1.23 to 1.7 W m-1 K-1) and HfSSe (1.78 to 2.2 W m-1 K-1) upon the incorporation of the non-analytic correction term. Furthermore, the mode Grüneisen parameter is calculated to be as high as ∼2.0, at room temperature, indicating a strong anharmonicity. Moreover, the contribution of optical phonons to k L is found to be ∼12%, which is significantly high than that in single-layer MoS2. Large atomic mass of Hf (178.5 u), small phonon group velocities (4-5 km s-1), low Debye temperature (∼166 K), low bond and elastic stiffness (Young's modulus ∼75 N m-1), small phonon lifetimes (∼6 ps), low specific heat capacity (∼17 J K-1 mol-1) and strong anharmonicity are collectively found to be the factors responsible for such a low k L. These findings would be immensely helpful in designing thermoelectric interconnects at the nanoscale and 2D material-based energy harvesters.

Tweaking the Physics of Interfaces between Monolayers of Buckled Cadmium Sulfide for a Superhigh Piezoelectricity, Excitonic Solar Cell Efficiency, and Thermoelectricity

Interfaces of heterostructures are routinely studied for different applications. Interestingly, monolayers of the same material when interfaced in an unconventional manner can bring about novel properties. For instance, CdS monolayers, stacked in a particular order, are found to show unprecedented potential in the conversion of nanomechanical energy, solar energy, and waste heat into electricity, which has been systematically investigated in this work, using DFT-based approaches. Moreover, stable ultrathin structures showing strong capabilities for all kinds of energy conversion are scarce. The emergence of a very high out-of-plane piezoelectricity, |d₃₃| ≈ 56 pm/V, induced by the inversion symmetry broken in the buckled structure helps to supersede the previously reported bulk wurzite GaN, AlN, and Janus multilayer structures of Mo- and W-based dichalcogenides. The piezoelectric coefficients have been found to be largely dependent on the relative stacking between the two layers. CdS bilayer is a direct band gap semiconductor, with its band edges straddling the water redox potential, thereby making it thermodynamically favorable for photocatalytic applications. Strain engineering facilitates its transition from type I to type II semiconductor in CdS bilayer stacked over monolayer boron phosphide, and the theoretically calculated power conversion efficiency (PCE) in the 2D excitonic solar cell exceeds 27% for a fill factor of 0.8, which is much higher than that in ZnO/CdS/CuInGaSe solar cell (20% efficiency). Thermoelectric properties have been investigated using semi classical Boltzmann transport equations for electrons and phonons within the constant relaxation time approximation coupled to deformation potential theory, which reveal ultralow thermal conductivity (κ_l ≈ 0.78 W m^-1 K^-1) at room temperature because of the presence of heavy element Cd, strong anharmonicity (high mode Gruneisen parameter at long wavelength, phonon lifetime <5 ps), low phonon group velocity (4 km/s), and low Debye temperature (260 K). Such a low thermal conductivity is lower than that of dumbbell silicene (2.86 W m^-1 K^-1), SnS₂ (6.41 W m^-1 K^-1) and SnSe₂ (3.82 W m^-1 K^-1), and SnP₃ (4.97 W m^-1 K^-1). CdS bilayer shows a thermoelectric figure of merit (ZT) ≈ 0.8 for p-type and ∼0.7 for n-type doping at room temperature. Its ultrahigh carrier mobility (μ_e ≈ 2270 cm² V^-1 s^-1) is higher than that of single-layer MoS₂ and comparable to that in InSe. The versatile properties of CdS bilayer together with its all-round stability supported by ab initio molecular dynamics simulation, phonon dispersion, and satisfaction of Born-Huang stability criteria highlight its outstanding potential for applications in device fabrication and applications in next-generation nanoelectronics and energy harvesting.

Proton-Triggered Fluorescence Switching in Self-Exfoliated Ionic Covalent Organic Nanosheets for Applications in Selective Detection of Anions

The exfoliation of covalent organic frameworks into covalent organic nanosheets (CONs) not only helps to reduce fluorescence turn-off phenomena but also provides well-exposed active sites for fast response and recovery for various applications. The present work is an example of rational designing of a structure constructed by condensing triaminoguanidinium chloride (TG_Cl), an intrinsic ionic linker, with a fluorophore, 2, 5-dimethoxyterephthalaldehyde (DA), to produce highly fluorescent self-exfoliable ionic CONs (DATG_Cl-iCONs). These fluorescent iCONs are able to sense fluoride ions selectively down to the ppb level via the fluorescence turn-off mechanism. A closer look at the quenching mechanism via NMR, zeta potential measurement, lifetime measurement, and density functional theory calculations reveals unique proton-triggered fluorescence switching behavior of newly synthesized DATG_Cl-iCONs.

Interfacing Boron Monophosphide with Molybdenum Disulfide for an Ultrahigh Performance in Thermoelectrics, Two-Dimensional Excitonic Solar Cells, and Nanopiezotronics

A stable ultrathin 2D van der Waals (vdW) heterobilayer, based on the recently synthesized boron monophosphide (BP) and the widely studied molybdenum disulfide (MoS₂), has been systematically explored for the conversion of waste heat, solar energy, and nanomechanical energy into electricity. It shows a gigantic figure of merit (ZT) > 12 (4) for p (n)-type doping at 800 K, which is the highest ever reported till date. At room temperature (300 K), ZT reaches 1.1 (0.3) for p (n)-type doping, which is comparable to experimentally measured ZT = 1.1 on the PbTe-PbSnS₂ nanocomposite at 300 K, while it outweighs the Cu₂Se-CuInSe₂ nanocomposite (ZT = 2.6 at 850 K) and the theoretically calculated ZT = 7 at 600 K on silver halides. Lattice thermal conductivity (κ_l ≈ 49 W m^-1 K^-1) calculated at room temperature is lesser than those of black phosphorene (78 W m^-1 K^-1) and arsenene (61 W m^-1 K^-1). The nearly matched lattice constants in the commensurate lattices of the constituent monolayers help to preserve the direct band gap at the K point in the type II vdW heterobilayer of MoS₂/BP, where BP and MoS₂ serve as donor and acceptor materials, respectively. An ultrahigh carrier mobility of ∼20 × 10³ cm² V^-1 s^-1 is found, which exceeds those of previously reported transition metal dichalcogenide-based vdW heterostructures. The exciton binding energy (0.5 eV) is close to those of MoS₂ (0.54 eV) and C₃N₄ (0.33 eV) single layers. The calculated power conversion efficiency (PCE) in the monolayer MoS₂/BP heterobilayer exceeds 20%. It surpasses the efficiency in MoS₂/p-Si heterojunction solar cells (5.23%) and competes with the theoretically calculated ones, as listed in the manuscript. Furthermore, a high optical absorbance (∼10⁵ cm^-1) of visible light and a small conduction band offset (0.13 eV) make MoS₂/BP very promising in 2D excitonic solar cells. The out-of-plane piezoelectric strain coefficient, d₃₃ ≈ 3.16 pm/V, is found to be enhanced 4-fold (∼14.3 pm/V) upon applying 7% vertical compressive strain on the heterobilayer, which corresponds to ∼1 kbar of hydrostatic pressure. Such a high out-of-plane piezoelectric coefficient, which can tune top-gating effects in ultrathin 2D nanopiezotronics, is a relatively new finding. As BP has been synthesized recently, experimental realization of the multifunctional, versatile MoS₂/BP heterostructure would be highly feasible.

Exceptional mechano-electronic properties in the HfN2 monolayer: a promising candidate in low-power flexible electronics, memory devices and photocatalysis

The response of the electronic properties of the HfN₂ monolayer to external perturbation such as strain and electric fields has been investigated using density functional theory calculations for its device-based applications and photocatalysis.

Superhigh out-of-plane piezoelectricity, low thermal conductivity and photocatalytic abilities in ultrathin 2D van der Waals heterostructures of boron monophosphide and gallium nitride

A stable 2D van der Waals (vdW) heterobilayer, constituted by boron monophosphide (BP) and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy conversion and nanoelectronics. The nearly matched lattice constants of GaN and BP are commensurate with each other in their lattice structures. The out-of-plane inversion asymmetry coupled with the large difference in atomic charges between the GaN and BP monolayers induces in the heterobilayer a giant out-of-plane piezoelectric coefficient (|d33|max ≈ 40 pm V-1), which is the highest ever reported in 2D materials of a finite thickness. It is much higher than the out-of-plane piezoelectric coefficient reported earlier in multilayered Janus transition metal dichalcogenide MXY (M = Mo, W; X, Y = S, Se, Te) (|d33|max = 10.57 pm V-1). Such a high out-of-plane piezoelectricity found in a BP/GaN heterobilayer can bring about gigantic strain-tunable top gating effects in nanopiezotronic devices based on the same. Moreover, electron mobility (∼104 cm2 V-1 s-1) is much higher than that of transition metal dichalcogenides and conventional semiconductors. The origin of low lattice thermal conductivity (κL ∼ 25.25 W m-1 K-1) in BP/GaN at room temperature, which is lower than that of black phosphorene (78 W m-1 K-1), buckled arsenene (61 W m-1 K-1), BCN (90 W m-1 K-1), MoS2 (34.5 W m-1 K-1) and WS2 (32 W m-1 K-1) monolayers, has been systematically investigated via phonon dispersion, lattice thermal conductivity, phonon lifetime and mode Grüneisen parameters. The valence band maximum (VBM) and conduction band minimum (CBM) arising from GaN and BP monolayers respectively result in a type II vdW heterobilayer, which is found to be thermodynamically favorable for photocatalytic water splitting in both acidic and neutral media. The exciton binding energies are comparable to those of MoS2 and C3N4 single layers, while the absorbance reaches as high as ∼105 cm-1 in the visible wavelength region. The emergence of high piezoelectricity, high carrier mobility, low lattice thermal conductivity and photocatalytic water splitting abilities in the proposed vdW heterobilayer signifies enormous potential for its versatile applications in nanoscale energy harvesting, e.g., nano-sensors in medical devices, future nanopiezotronics, 2D thermoelectrics and solar energy conversion.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS₂ (ML-MoS₂) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid-Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS₂ is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the (direct) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm² V^-1 s^-1. Such strain sensitive thermoelectric responses in ML-MoS₂ could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting.

Electronic and transport behavior of doped armchair silicene nanoribbons exhibiting negative differential resistance and its FET performance

The electronic and transport properties of armchair silicene nanoribbons (ASiNRs) doped with various elements are investigated.

A systematic investigation of acetylene activation and hydracyanation of the activated acetylene on Aun (n = 3–10) clusters via density functional theory

Vinyl isocyanide formation: adsorption of C₂H₂ and HCN in succession on the Au₉ cluster; towards polymerization: clustering of C₂H₂ on Au₉.

Tailoring the transmission lineshape spectrum of zigzag graphene nanoribbon based heterojunctions via controlling their width and edge protrusions

We report a first-principles analysis of electron transport through narrow zigzag graphene nanoribbon (up to 2.2 nm) based wedge-shaped heterojunctions. We show that the width difference between the electrode and the scattering region and the edge protrusion of heterojunctions can be tuned to endow the system's transmission spectrum with distinctive features. In particular, transport through junctions with a one sided protrusion in the scattering region is always dominated by a Breit-Wigner-type resonance right at the Fermi level, regardless of the large or small width difference. On the other hand, a junction with protrusions on both sides of the scattering region shows insulating behaviour near the Fermi level for a large width difference but weak transmission channels are formed at the core of the scattering region for a small width difference. When the protrusion is absent in the junction, transmission functions display rather complex structures: double peaks situating nearly symmetrically away from the Fermi level and a strongly asymmetric profile in the vicinity of the Fermi level are observed for large and small width differences, respectively. These results may shed light on the design of real connecting components in nanocircuits.

TiO2-based gas sensor: a possible application to SO2

Fixation of SO2 molecules on anatase TiO2 surfaces with defects have been investigated by first-principles density functional theory (DFT) calculations and in situ Fourier transform infrared (FTIR) surface spectroscopy on porous TiO2 films. Intrinsic oxygen-vacancy defects, which are formed on TiO2(001) and TiO2(101) surfaces by ultraviolet (UV) light irradiation and at elevated temperatures, are found to be most effective in anchoring the SO2 gas molecules to the TiO2 surfaces. Both TiO2(101) and TiO2(001) surfaces with oxygen vacancies are found to exhibit higher SO2 adsorption energies in the DFT calculations. The adsorption mechanism of SO2 is explained on the basis of electronic structure, charge transfer between the molecule and the surface, and the oxidation state of the adsorbed molecule. The theoretical findings are corroborated by FTIR experiments. Moreover, the (001) surface with oxygen vacancies is found to bind SO2 gas molecules more strongly, as compared to the (101) surface. Higher concentration of oxygen vacancies on the TiO2 surfaces is found to significantly increase the adsorption energy. The results shed new insight into the sensing properties of TiO2-based gas sensors.

Inducing novel electronic properties in <112> Ge nanowires by means of variations in their size, shape and strain: a first-principles computational study

The size, shape and strain dependences of the electronic properties of germanium nanowires (GeNWs) along the <112> direction are investigated using first-principles calculations based on density functional theory. The structures of relatively stable <112> GeNWs of different sizes have been revealed. The <112> GeNWs exhibit direct band gaps when the cross-sectional aspect ratio of the (111) to the (110) facet is larger than 1. For a relatively high stability of the <112> GeNWs, the compressive strain tends to widen the band gap, whereas tensile strain tends to narrow it. The variation in band gaps originates from the different responses of valence and conduction bands to externally applied strain. Our results demonstrate that size, shape and strain can be used in unison to effectively tune the band structures of GeNWs, providing useful guidance for designing future nanoelectronic devices.

Manipulating molecular quantum states with classical metal atom inputs: demonstration of a single molecule NOR logic gate

Quantum states of a trinaphthylene molecule were manipulated by putting its naphthyl branches in contact with single Au atoms. One Au atom carries 1-bit of classical information input that is converted into quantum information throughout the molecule. The Au-trinaphthylene electronic interactions give rise to measurable energy shifts of the molecular electronic states demonstrating a NOR logic gate functionality. The NOR truth table of the single molecule logic gate was characterized by means of scanning tunnelling spectroscopy.