Direct Quantifying Charge Transfer by 4D-STEM: A Study on Perfect and Defective Hexagonal Boron Nitride

Four-dimensional scanning transmission electron microscopy (4D-STEM) offers an attractive approach to simultaneously obtain precise structural determinations and capture details of local electric fields and charge densities. However, accurately extracting quantitative data at the atomic scale poses challenges, primarily due to probe propagation and size-related effects, which may even lead to misinterpretations of qualitative effects. In this study, we present a comprehensive analysis of electric fields and charge densities in both pristine and defective h-BN flakes. Through a combination of experiments and first-principle simulations, we demonstrate that while precise charge quantification at individual atomic sites is hindered by probe effects, 4D-STEM can directly measure charge transfer phenomena at the monolayer edge with sensitivity down to a few tenths of an electron and a spatial resolution on the order of a few angstroms.

On-Surface Synthesis and Evolution of Self-Assembled Poly(p-phenylene) Chains on Ag(111): A Joint Experimental and Theoretical Study

The growth of controlled 1D carbon-based nanostructures on metal surfaces is a multistep process whose path, activation energies, and intermediate metastable states strongly depend on the employed substrate. Whereas this process has been extensively studied on gold, less work has been dedicated to silver surfaces, which have a rather different catalytic activity. In this work, we present an experimental and theoretical investigation of the growth of poly-p-phenylene (PPP) chains and subsequent narrow graphene ribbons starting from 4,4″-dibromo-p-terphenyl molecular precursors deposited at the silver surface. By combing scanning tunneling microscopy (STM) imaging and density functional theory (DFT) simulations, we describe the molecular morphology and organization at different steps of the growth process and we discuss the stability and conversion of the encountered species on the basis of calculated thermodynamic quantities. Unlike the case of gold, at the debromination step we observe the appearance of organometallic molecules and chains, which can be explained by their negative formation energy in the presence of a silver adatom reservoir. At the dehydrogenation temperature, the persistence of intercalated Br atoms hinders the formation of well-structured graphene ribbons, which are instead observed on gold, leading only to a partial lateral coupling of the PPP chains. We numerically derive very different activation energies for Br desorption from the Ag and Au surfaces, thereby confirming the importance of this process in defining the kinetics of the formation of molecular chains and graphene ribbons on different metal surfaces.

Cathodoluminescence excitation spectroscopy: Nanoscale imaging of excitation pathways

Following optical excitations' life span from creation to decay into photons is crucial in understanding materials photophysics. Macroscopically, this is studied using optical techniques, such as photoluminescence excitation spectroscopy. However, excitation and emission pathways can vary at nanometer scales, preventing direct access, as no characterization technique has the relevant spatial, spectral, and time resolution. Here, using combined electron spectroscopies, we explore excitations' creation and decay in two representative optical materials: plasmonic nanoparticles and luminescent two-dimensional layers. The analysis of the energy lost by an exciting electron that is coincident in time with a visible-ultraviolet photon unveils the decay pathways from excitation toward light emission. This is demonstrated for phase-locked (coherent) interactions (localized surface plasmons) and non-phase-locked ones (point defect excited states). The developed cathodoluminescence excitation spectroscopy images energy transfer pathways at the nanometer scale, widening the available toolset to explore nanoscale materials.

Nanoscale Modification of WS2 Trion Emission by Its Local Electromagnetic Environment

Structural, electronic, and chemical nanoscale modifications of transition metal dichalcogenide monolayers alter their optical properties. A key missing element for complete control is a direct spatial correlation of optical response to nanoscale modifications due to the large gap in spatial resolution between optical spectroscopy and nanometer-resolved techniques. Here, we bridge this gap by obtaining nanometer-resolved optical properties using electron spectroscopy at cryogenic temperatures, specifically electron energy loss spectroscopy for absorption and cathodoluminescence for emission, which are then directly correlated to chemical and structural information. In an h-BN/WS₂/h-BN heterostructure, we observe local modulation of the trion (X^-) emission due to tens of nanometer wide dielectric patches. Trion emission also increases in regions where charge accumulation occurs, close to the carbon film supporting the heterostructures. The localized exciton emission (L) detected here is not correlated to strain above 1%, suggesting point defects might be involved in their formation.

Mapping Modified Electronic Levels in the Moiré Patterns in MoS2/WSe2 Using Low-Loss EELS

Hybrid/moiré interlayer and intralayer excitons have been realized in twisted two-dimensional transition metal chalcogenides (2D-TMD) due to variation in local moiré potential within a moiré supercell. Though moiré excitons have been detected in TMD heterostructures by macroscopic spectroscopic techniques, their spatial distribution is experimentally unknown. In the present work, using high-resolution scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS), we explore the effect of the twist angle in MoS₂/WSe₂ heterostructures. We observe weak interaction between the layers at higher twist angles (>5°) and stronger interaction for lower twist angles. The optical response of the heterostructure varies within the moiré supercell, with a lower energy absorption peak appearing in regions with the AA stacking.

Tailored Nanoscale Plasmon-Enhanced Vibrational Electron Spectroscopy

Atomic vibrations and phonons are an excellent source of information on nanomaterials that we can access through a variety of methods including Raman scattering, infrared spectroscopy, and electron energy-loss spectroscopy (EELS). In the presence of a plasmon local field, vibrations are strongly modified and, in particular, their dipolar strengths are highly enhanced, thus rendering Raman scattering and infrared spectroscopy extremely sensitive techniques. Here, we experimentally demonstrate that the interaction between a relativistic electron and vibrational modes in nanostructures is fundamentally modified in the presence of plasmons. We finely tune the energy of surface plasmons in metallic nanowires in the vicinity of hexagonal boron nitride, making it possible to monitor and disentangle both strong phonon-plasmon coupling and plasmon-driven phonon enhancement at the nanometer scale. Because of the near-field character of the electron beam-phonon interaction, optically inactive phonon modes are also observed. Besides increasing our understanding of phonon physics, our results hold great potential for investigating sensing mechanisms and chemistry in complex nanomaterials down to the molecular level.

Interplay Between Cr Dopants and Vacancy Clustering in the Structural and Optical Properties of WSe2

Here, we analyze the effect of Cr doping on WSe₂ crystals. The topology and the chemistry of the doped samples have been investigated by atom-resolved scanning transmission electron microscopy combined with electron energy loss spectroscopy. Cr (measured to have formal valence 3+) occupies W sites (formal valence 4+), indicating a possible hole doping. However, single or double Se vacancies cluster near Cr atoms, leading to an effective electron doping. These defects organization can be explained by the strong binding energy of the Cr_W-V_se complex obtained by density functional theory calculations. In highly Cr-doped samples, a local phase transition from the 2H to the to 1T phase is observed, which has been previously reported for other electron-doped transition-metal dichalcogenides. Cr-doped crystals suffer a compressive strain, resulting in an isotropic lattice contraction and an anisotropic optical bandgap energy shift (25 meV in-plane and 80 meV out-of-plane).

Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer

The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp² hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.

Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions

Recent experimental investigations have confirmed the possibility to synthesize and exploit polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles methods based on density functional theory and many-body perturbation theory to investigate the electronic and optical properties of hexagonal-diamond and cubic-diamond Si NWs as well as their homojunctions. We show that hexagonal-diamond NWs are characterized by a more pronounced quantum confinement effect than cubic-diamond NWs. Furthermore, they absorb more light in the visible region with respect to cubic-diamond ones and, for most of the studied diameters, they are direct band gap materials. The study of the homojunctions reveals that the diameter has a crucial effect on the band alignment at the interface. In particular, at small diameters the band-offset is type-I whereas at experimentally relevant sizes the offset turns up to be of type-II. These findings highlight intriguing possibilities to modulate electron and hole separations as well as electronic and optical properties by simply modifying the crystal phase and the size of the junction.

Bright UV Single Photon Emission at Point Defects in h-BN

To date, quantum sources in the ultraviolet (UV) spectral region have been obtained only in semiconductor quantum dots. Color centers in wide bandgap materials may represent a more effective alternative. However, the quest for UV quantum emitters in bulk crystals faces the difficulty of combining an efficient UV excitation/detection optical setup with the capability of addressing individual color centers in potentially highly defective materials. In this work we overcome this limit by employing an original experimental setup coupling cathodoluminescence within a scanning transmission electron microscope to a Hanbury-Brown-Twiss intensity interferometer. We identify a new extremely bright UV single photon emitter (4.1 eV) in hexagonal boron nitride. Hyperspectral cathodoluminescence maps show a high spatial localization of the emission (∼80 nm) and a typical zero-phonon line plus phonon replica spectroscopic signature, indicating a point defect origin, most likely carbon substitutional at nitrogen sites. An additional nonsingle-photon broad emission may appear in the same spectral region, which can be attributed to intrinsic defects related to electron irradiation.

Atomic structure of epitaxial graphene sidewall nanoribbons: flat graphene, miniribbons, and the confinement gap

Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional quantized ballistic transport up to 15 μm at room temperature. Angular-resolved photoemission spectroscopy (ARPES) has shown that the ribbons have the band structure of charge neutral graphene, while bent regions of the ribbon develop a bandgap. We present scanning tunneling microscopy and transmission electron microscopy of armchair nanoribbons grown on recrystallized sidewall trenches etched in SiC. We show that the nanoribbons consist of a single graphene layer essentially decoupled from the facet surface. The nanoribbons are bordered by 1-2 nm wide bent miniribbons at both the top and bottom edges of the nanoribbons. We establish that nanoscale confinement in the graphene miniribbons is the origin of the local large band gap observed in ARPES. The structural results presented here show how this gap is formed and provide a framework to help understand ballistic transport in sidewall graphene.

Electric-field control of magnetic order above room temperature

Controlling magnetism by means of electric fields is a key issue for the future development of low-power spintronics. Progress has been made in the electrical control of magnetic anisotropy, domain structure, spin polarization or critical temperatures. However, the ability to turn on and off robust ferromagnetism at room temperature and above has remained elusive. Here we use ferroelectricity in BaTiO3 crystals to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature. The detailed analysis of the data in the light of first-principles calculations indicate that the phenomenon is mediated by both strain and field effects from the BaTiO3. Our results correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude and open new perspectives for the use of ferroelectrics in magnetic storage and spintronics.

Atomic and electronic structure of the BaTiO3/Fe interface in multiferroic tunnel junctions

Artificial multiferroic tunnel junctions combining a ferroelectric tunnel barrier of BaTiO(3) with magnetic electrodes display a tunnel magnetoresistance whose intensity can be controlled by the ferroelectric polarization of the barrier. This effect, called tunnel electromagnetoresistance (TEMR), and the corollary magnetoelectric coupling mechanisms at the BaTiO(3)/Fe interface were recently reported through macroscopic techniques. Here, we use advanced spectromicroscopy techniques by means of aberration-corrected scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) to probe locally the nanoscale structural and electronic modifications at the ferroelectric/ferromagnetic interface. Atomically resolved real-space spectroscopic techniques reveal the presence of a single FeO layer between BaTiO(3) and Fe. Based on this accurate description of the studied interface, we propose an atomistic model of the ferroelectric/ferromagnetic interface further validated by comparing experimental and simulated STEM images with atomic resolution. Density functional theory calculations allow us to interpret the electronic and magnetic properties of these interfaces and to understand better their key role in the physics of multiferroics nanostructures.

Interface-induced room-temperature multiferroicity in BaTiO₃

Multiferroic materials possess two or more ferroic orders but have not been exploited in devices owing to the scarcity of room-temperature examples. Those that are ferromagnetic and ferroelectric have potential applications in multi-state data storage if the ferroic orders switch independently, or in electric-field controlled spintronics if the magnetoelectric coupling is strong. Future applications could also exploit toroidal moments and optical effects that arise from the simultaneous breaking of time-reversal and space-inversion symmetries. Here, we use soft X-ray resonant magnetic scattering and piezoresponse force microscopy to reveal that, at the interface with Fe or Co, ultrathin films of the archetypal ferroelectric BaTiO₃ simultaneously possess a magnetization and a polarization that are both spontaneous and hysteretic at room temperature. Ab initio calculations of realistic interface structures provide insight into the origin of the induced moments and bring support to this new approach for creating room-temperature multiferroics.

Low-energy termination of graphene edges via the formation of narrow nanotubes

We demonstrate that free graphene sheet edges can curl back on themselves, reconstructing as nanotubes. This results in lower formation energies than any other nonfunctionalized edge structure reported to date in the literature. We determine the critical tube size and formation barrier and compare with density functional simulations of other edge terminations including a new reconstructed Klein edge. Simulated high resolution electron microscopy images show why such rolled edges may be difficult to detect. Rolled zigzag edges serve as metallic conduction channels, separated from the neighboring bulk graphene by a chain of insulating sp(3)-carbon atoms, and introduce van Hove singularities into the graphene density of states.

Defective structure of BN nanotubes: from single vacancies to dislocation lines

A combination of electron microscopy and theoretical calculations provides new insights into the structure, electronics, and energetics of point defects and vacancy lines in BN single-wall nanotubes (SWNT). We show that the point defects forming under electron irradiation in the BN SWNTs are primarily divacancies. Due to the partially ionic character of the BN bonding, divacancies behave like an associated Schottky pair, with a dissociation energy of around 8 eV. Clustering of multiple vacancies is energetically favorable and leads to extended defects which locally change the nanotube diameter and chirality. Nevertheless these defects do not alter significantly the band gap energy, and all of them have electronic structure similar to that of BN divacancies. We thus conclude that under irradiation BN SWNT may have a very stable alteration of its electronic and optical properties.

"Magic" heteroepitaxial growth on vicinal surfaces

The step period (Lambda) of vicinal surfaces can be used as a new parameter for the control of metallic heteroepitaxial growth. This is evidenced here in the case of Ag/Cu(211). The deposition of 1 monolayer (ML) exhibits a c(2 x 10) superstructure leading to the formation of [111] steps in the Ag adlayer in contrast with the original [100] steps for the Cu substrate. This wetting layer can be viewed as a (133) Ag plane and it will be the starting point for the epitaxial growth. The deposition of 4 ML shows that the thin Ag film results homogeneous and no twins or stacking faults are detected. Moreover, the film grows along the [133] axis which is the orientation that minimizes the misfit between Cu(211) and the Ag film. Thus, the use of a regular stepped substrate allows one to select the crystallographic orientation of the growth and seems to be a way to avoid the creation of stacking faults.