Improving Néel Domain Walls Dynamics and Skyrmion Stability Using He Ion Irradiation

Ion irradiation with light ions is an appealing way to finely tune the magnetic properties of thin magnetic films and in particular the perpendicular magnetic anisotropy (PMA). In this work, the effect of He⁺ irradiation on the magnetization reversal and on the domain wall dynamics  of Pt/Co/AlOx trilayers is illustrated. Fluences up to 1.5 × 10¹⁵ ions cm^-2 strongly decrease the PMA, without affecting neither the spontaneous magnetization nor the strength of the interfacial Dzyaloshinskii-Moriya interaction (DMI). This confirms experimentally the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA, a strong decrease of the domain wall depinning field is observed after irradiation. This allows the domain walls to reach large maximum velocities with a lower magnetic field compared to that needed for the pristine films. Decoupling PMA from DMI can, therefore, be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He⁺ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition, where ≈100nm size magnetic skyrmions are stabilized. It is observed that as the He⁺ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field, as predicted by theoretical models developed for ultrathin films with labyrinthine domains.

Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations

Deep learning has an increasing impact to assist research, allowing, for example, the discovery of novel materials. Until now, however, these artificial intelligence techniques have fallen short of discovering the full differential equation of an experimental physical system. Here we show that a dynamical neural network, trained on a minimal amount of data, can predict the behavior of spintronic devices with high accuracy and an extremely efficient simulation time, compared to the micromagnetic simulations that are usually employed to model them. For this purpose, we re-frame the formalism of Neural Ordinary Differential Equations to the constraints of spintronics: few measured outputs, multiple inputs and internal parameters. We demonstrate with Neural Ordinary Differential Equations an acceleration factor over 200 compared to micromagnetic simulations for a complex problem - the simulation of a reservoir computer made of magnetic skyrmions (20 minutes compared to three days). In a second realization, we show that we can predict the noisy response of experimental spintronic nano-oscillators to varying inputs after training Neural Ordinary Differential Equations on five milliseconds of their measured response to a different set of inputs. Neural Ordinary Differential Equations can therefore constitute a disruptive tool for developing spintronic applications in complement to micromagnetic simulations, which are time-consuming and cannot fit experiments when noise or imperfections are present. Our approach can also be generalized to other electronic devices involving dynamics.

Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation

We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He[Formula: see text]) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the multilayers. Our results show clear evidence of the He[Formula: see text] irradiation effects on the magnetic properties which is consistent with interface modification due to the effects of the He[Formula: see text] irradiation. This external degree of freedom offers promising perspectives to further improve the control of magnetic skyrmions in multilayers, that could push them towards integration in future technologies.

Helium Ions Put Magnetic Skyrmions on the Track

Magnetic skyrmions are deemed to be the forerunners of novel spintronic memory and logic devices. While their observation and their current-driven motion at room temperature have been demonstrated, certain issues regarding their nucleation, stability, pinning, and skyrmion Hall effect still need to be overcome to realize functional devices. Here, we demonstrate that focused He⁺-ion-irradiation can be used to create and guide skyrmions in racetracks. We show that the reduction of the perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in the track defined by ion-irradiation leads to the formation of stable isolated skyrmions. Current-driven skyrmion motion experiments and simulations reveal that the skyrmions move along the irradiated track, resulting in the suppression of the skyrmion Hall effect, and that the maximum skyrmion velocity can be enhanced by tuning the magnetic properties. These results open up a new path to nucleate and guide magnetic skyrmions in racetrack devices.

Magnetoresistive sensors based on the elasticity of domain walls

Magnetic sensors based on magnetoresistance effects have promising application prospects due to their excellent sensitivity and their advantages in terms of integration. However, the competition between higher sensitivity and a larger measuring range remains a problem. Here, we propose a novel mechanism for designing magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic domain wall in the free layer of a spin valve or a magnetic tunnel junction. The performances of devices based on this mechanism, such as the sensitivity and the measuring range, can be tuned by manipulating the geometry of the device. This can be achieved without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via a micromagnetic simulation.

Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures

The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices.

The use of electric fields to control the magnetization of ferromagnetic materials could enable more efficient electronics. Lei et al. show that by applying lateral strain to a magnetostrictive nanowire with a piezoelectric, voltage-controlled gating of magnetic domain wall motion in the wire can be achieved.

Magnetic logic using nanowires with perpendicular anisotropy

In addition to a storage function through the magnetization of nanowires, domain wall propagation can be used to trigger magnetic logic functions. Here, we present a new way to realize a pure magnetic logic operation by using magnetic nanowires with perpendicular anisotropy. Emphasis is given on the generation of the logic function 'NOT' that is based on the dipolar interaction between two neighbouring magnetic wires, which favours the creation of a domain wall. This concept has been validated on several prototypes and the results fit well with the expectations.

Domain wall creation in nanostructures driven by a spin-polarized current

We report on current-driven magnetization reversal in nanopillars with elements having perpendicular magnetic anisotropy. Whereas only the two uniform magnetization states are available under the action of a magnetic field, we observed current-induced Bloch domain walls in pillars as small as 50 x 100 nm(2). This domain wall state can be further controlled by current to restore the uniform states. The ability to nucleate and manipulate domain walls by a current gives insight into the reversal mechanisms of small nanoelements and provides new prospects for ultrahigh density spintronic devices.

Thermally activated depinning of a narrow domain wall from a single defect

We describe the field induced depinning process of a magnetic domain wall (DW) from a single bidimensional nanometric defect. The DW propagates in a wire lithographed on a film with strong perpendicular anisotropy. We observe a statistical distribution of the relaxation time consistent with a Néel-Brown picture of magnetization reversal. This indicates that the nanometric DW can be considered as an ideal monodomain particle switching over a single energy barrier. Such a stochastic character of DW depinning has to be taken into account for spintronic applications.

Nanometer scale observation of high efficiency thermally assisted current-driven domain wall depinning

Nanometer scale observation of the depinning of a narrow domain wall (DW) under a spin current is reported. We studied approximately 12 nm wide 1D Bloch DWs created in thin films exhibiting perpendicular magnetic anisotropy. Magnetotransport measurements reveal thermally assisted current-driven DW motion between pinning sites separated by as little as 20 nm. The efficiency of current-driven DW motion assisted by thermal fluctuations is measured to be orders of magnitude higher than has been found for in-plane magnetized films, allowing us to control DW motion on a nanometer scale at low current densities.

Domain wall creep in magnetic wires

The dynamics of a 1D domain wall (DW) in magnetic wires patterned in 2D ultrathin Co films is studied as a function of the wire width w0. The DW velocity v(H) is hugely reduced when w0 is decreased, and its field dependence is consistent with a creep process with a critical exponent micro=1/4. The effective critical field scales as (1/w0). Measurements of v(H) in wires with controlled artificial defects show that this arises from the edge roughness introduced by patterning. We show that the creep law can be renormalized by introducing a topologically induced critical field proportional to (1/w0).

Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media

We show how, combining He ion irradiation and thermal mobility below 600 K, the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd) may be triggered and controlled. Kinetic Monte Carlo simulations show that the initial directional short range order determines the transformation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially weak magnetic anisotropy to the highest values known for FePd films. Applications to ultrahigh density magnetic recording are suggested.