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Mao JY, Wu S, Ding G, Wang ZP, Qian FS, Yang JQ, Zhou Y, Han ST. A van der Waals Integrated Damage-Free Memristor Based on Layered 2D Hexagonal Boron Nitride. Small 2022; 18:e2106253. [PMID: 35083839 DOI: 10.1002/smll.202106253] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 12/20/2021] [Indexed: 06/14/2023]
Abstract
2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage-free Au/h-BN/Au memristor is reported using a clean, water-assisted metal transfer approach by physically assembling Au electrodes onto the layered h-BN which minimized the structural damage and undesired interfacial defects. The memristors demonstrate significantly improved performance with the coexistence of nonpolar and threshold switching as well as tunable current levels by controlling the compliance current, compared with devices with evaporated contacts. The devices integrated into an array show suppressed sneak path current and can work as both logic gates and latches to implement logic operations allowing in-memory computing. Cross-sectional scanning transmission electron microscopy analysis validates the feasibility of this nondestructive metal integration approach, the crucial role of high-quality atomically sharp interface in resistive switching, and a direct observation of percolation path. The underlying mechanism of boron vacancies-assisted transport is further supported experimentally by conductive atomic force microscopy free from process-induced damage, and theoretically by ab initio simulations.
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Affiliation(s)
- Jing-Yu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shuang Wu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhan-Peng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fang-Sheng Qian
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jia-Qin Yang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
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