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Cao YL, Sun C, Xi JY, Luo SS, Hu JN, Zheng YS, Qiao K, Lu JH, Lin J. [Clinical features of peripheral neuropathy with livedo reticularis: an analysis of seven cases]. Zhonghua Yi Xue Za Zhi 2024; 104:218-221. [PMID: 38220448 DOI: 10.3760/cma.j.cn112137-20231024-00882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 01/16/2024]
Abstract
The clinical characteristics, auxiliary examinations, skin and neuropathological features of 7 patients who had reticular cyanosis with peripheral neuropathy from the Department of Neurology, Huashan Hospital, Fudan University from January 2019 to December 2022 were retrospectively analyzed. Among the 7 patients, 5 were female and 2 were male.The age of onset of peripheral neuropathy was (39.8±21.3) years and the disease duration of peripheral neuropathy was (2.7±2.3) years. Three patients had acute onset and 4 patients had chronic onset. All the patients had limb numbness, with limb weakness in 6 patients and pain in 5 cases. Neuroelectrophysiological examination revealed 1 case of mononeuropathy, 2 cases of polyneuropathy, 2 cases of peripheral neuropathy, and 2 cases of sensory neuron neuropathy. Skin biopsy was performed in 3 patients, which presented hyperplasia and expansion of blood vessels in the dermis with lymphocyte infiltration. Nerve biopsy was performed in 3 patients, indicating axonal damage. Reticular cyanosis with peripheral neuropathy characterizes with numbness and weakness of limbs, most of which were accompanied by pain. Electrophysiological changes are in various forms. The pathological changes are dominated by the damage of axonal.
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Affiliation(s)
- Y L Cao
- Department of Neurology, the Second Affiliated Hospital of Soochow University, Suzhou 215004, China
| | - C Sun
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - J Y Xi
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - S S Luo
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - J N Hu
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - Y S Zheng
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - K Qiao
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - J H Lu
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
| | - J Lin
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai 200040, China
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Hu X, Han C, Zhang M, Mu Z, Fu Z, Ren J, Qiao K, Jia J, Yu J, Yuan S, Wei Y. Predicting Radiation Esophagitis using 18F-FAPI-04 PET/CT in Patients with LA-ESCC Treated with Concurrent Chemoradiotherapy. Int J Radiat Oncol Biol Phys 2023; 117:e303-e304. [PMID: 37785107 DOI: 10.1016/j.ijrobp.2023.06.2323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
PURPOSE/OBJECTIVE(S) This prospective study examined whether 18F-FAPI-04 PET/CT can predict the development and severity of radiation esophagitis (RE) in patients with locally advanced esophageal squamous cell carcinoma (LA-ESCC) treated with concurrent chemoradiotherapy. MATERIALS/METHODS From June 2021 to March 2022, images were prospectively collected from LA-ESCC patients who underwent 18F-FAPI-04 PET/CT examinations before and during radiotherapy. The development of RE was evaluated weekly according to Radiation Therapy Oncology Group criterion. The target-to-background ratio in blood (TBRblood) was analyzed at each time point and correlated with the onset and severity of RE. Factors that predicted RE were identified by multivariate logistic analyses. RESULTS Thirty patients (median age, 66.5 years [interquartile range: 56¨C71 years]; 22 men) were evaluated. Significantly higher TBRblood (during radiotherapy, mean: 3.06 vs 7.11, P = 0.003) and change in TBRblood compared with pre-RT (ΔTBRblood, mean: 0.67 vs 4.81, P = 0.002) were observed in patients with RE than patients without RE. Those with grade 3 RE had a significantly higher TBRblood (during radiotherapy, mean: 4.55 vs 9.66, P = 0.003) and ΔTBRblood (mean: 2.16 vs 7.50, P = 0.003) compared with those with RE CONCLUSION The ΔTBRblood on 18F-FAPI-04 PET/CT may be effective at identifying patients at risk for the development of RE, especially grade 3 RE.
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Affiliation(s)
- X Hu
- Department of Radiology, Shandong Cancer Hospital and Institute, Shandong First Medical University, Shandong Academy of Medical Sciences, Jinan, Shandong, China
| | - C Han
- Department of Surgery II, Breast Cancer Center, Shandong Cancer Hospital and Institute, Jinan, Shandong, China
| | - M Zhang
- 1.Department of Radiology, Shandong Cancer Hospital and Institute, Shandong First Medical University, Shandong Academy of Medical Sciences, Jinan, Shandong, China. 2.Cheeloo College of Medicine, Shandong University, Jinan, China
| | - Z Mu
- Department of Pathology, Shandong Cancer Hospital and Institute, Shandong First Medical University, Shandong Academy of Medical Sciences, Jinan, Shandong, China
| | - Z Fu
- Shandong Cancer Hospital and Institute, Jinan, China
| | - J Ren
- Department of PET/CT Center, Shandong Cancer Hospital and Institute, Shandong First Medical University, Shandong Academy of Medical Sciences, Jinan, China
| | - K Qiao
- Cheeloo College of Medicine, Shandong University, Jinan, Shandong, China
| | - J Jia
- Cheeloo College of Medicine, Shandong University, Jinan, Shandong, China 2. Department of Radiology, Shandong Cancer Hospital and Institute, Shandong First Medical University, Shandong Academy of Medical Sciences, Jinan, Shandong, China
| | - J Yu
- Shandong Cancer Hospital, Shandong University, Jinan, Shandong, China
| | - S Yuan
- Cheeloo College of Medicine, Shandong University, Jinan, Shandong, China
| | - Y Wei
- Shandong Cancer Hospital and Institute, Shandong First Medical University and Shandong Academy of Medical Sciences, Jinan, China
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3
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Kim H, Liu Y, Lu K, Chang CS, Sung D, Akl M, Qiao K, Kim KS, Park BI, Zhu M, Suh JM, Kim J, Jeong J, Baek Y, Ji YJ, Kang S, Lee S, Han NM, Kim C, Choi C, Zhang X, Choi HK, Zhang Y, Wang H, Kong L, Afeefah NN, Ansari MNM, Park J, Lee K, Yeom GY, Kim S, Hwang J, Kong J, Bae SH, Shi Y, Hong S, Kong W, Kim J. High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process. Nat Nanotechnol 2023; 18:464-470. [PMID: 36941360 DOI: 10.1038/s41565-023-01340-3] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Accepted: 02/03/2023] [Indexed: 05/21/2023]
Abstract
Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.
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Affiliation(s)
- Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yunpeng Liu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kuangye Lu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Celesta S Chang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dongchul Sung
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
| | - Marx Akl
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Kuan Qiao
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Menglin Zhu
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Jun Min Suh
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jekyung Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Junseok Jeong
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Sungsu Kang
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Sangho Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ne Myo Han
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chansoo Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyeong-Kyu Choi
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
| | - Yanming Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Lingping Kong
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Nordin Noor Afeefah
- Institute of Power Engineering, Universiti Tenaga Nasional, Kajang, Malaysia
| | | | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Republic of Korea
| | - Sungkyu Kim
- HMC, Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea
| | - Jinwoo Hwang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Jing Kong
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA
- Institute of Materials Science and Engineering, Washington University in St Louis, St Louis, MO, USA
| | - Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Suklyun Hong
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea.
| | - Wei Kong
- Department of Materials Science and Engineering, Westlake University, Hangzhou, Zhejiang, China.
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA.
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4
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Kim Y, Suh JM, Shin J, Liu Y, Yeon H, Qiao K, Kum HS, Kim C, Lee HE, Choi C, Kim H, Lee D, Lee J, Kang JH, Park BI, Kang S, Kim J, Kim S, Perozek JA, Wang K, Park Y, Kishen K, Kong L, Palacios T, Park J, Park MC, Kim HJ, Lee YS, Lee K, Bae SH, Kong W, Han J, Kim J. Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors. Science 2022; 377:859-864. [PMID: 35981034 DOI: 10.1126/science.abn7325] [Citation(s) in RCA: 35] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Recent advances in flexible and stretchable electronics have led to a surge of electronic skin (e-skin)-based health monitoring platforms. Conventional wireless e-skins rely on rigid integrated circuit chips that compromise the overall flexibility and consume considerable power. Chip-less wireless e-skins based on inductor-capacitor resonators are limited to mechanical sensors with low sensitivities. We report a chip-less wireless e-skin based on surface acoustic wave sensors made of freestanding ultrathin single-crystalline piezoelectric gallium nitride membranes. Surface acoustic wave-based e-skin offers highly sensitive, low-power, and long-term sensing of strain, ultraviolet light, and ion concentrations in sweat. We demonstrate weeklong monitoring of pulse. These results present routes to inexpensive and versatile low-power, high-sensitivity platforms for wireless health monitoring devices.
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Affiliation(s)
- Yeongin Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45219, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jiho Shin
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Yunpeng Liu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Hanwool Yeon
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Hyun S Kum
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea
| | - Chansoo Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Han Eol Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, South Korea
| | - Chanyeol Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jaeyong Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ji-Hoon Kang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Sungsu Kang
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, South Korea
| | - Jihoon Kim
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, South Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, South Korea
| | - Joshua A Perozek
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kejia Wang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311200 Zhejiang, People's Republic of China
| | - Yongmo Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kumar Kishen
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Lingping Kong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, South Korea.,Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, South Korea
| | - Min-Chul Park
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea
| | - Hyung-Jun Kim
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea.,Division of Nano and Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, South Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, South Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Department of Mechanical Engineering and Materials Science, Institute of Materials Science and Engineering, Washington University in St. Louis, MO 63139, USA
| | - Wei Kong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Department of Materials Science and Engineering, Westlake University, Hangzhou 310024 Zhejiang, People's Republic of China
| | - Jiyeon Han
- Skincare Division, Amorepacific R&D Center, Yongin 17074, South Korea
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.,Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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5
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Kim H, Lu K, Liu Y, Kum HS, Kim KS, Qiao K, Bae SH, Lee S, Ji YJ, Kim KH, Paik H, Xie S, Shin H, Choi C, Lee JH, Dong C, Robinson JA, Lee JH, Ahn JH, Yeom GY, Schlom DG, Kim J. Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene. ACS Nano 2021; 15:10587-10596. [PMID: 34081854 DOI: 10.1021/acsnano.1c03296] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.
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Affiliation(s)
- Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yunpeng Liu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hyun S Kum
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ki Hyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Saien Xie
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Chanyeol Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - June Hyuk Lee
- Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea
| | - Chengye Dong
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
- Leibniz-Institut für Kristallzüchtung, Berlin 12489, Germany
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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6
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Qiao K, Liu Y, Kim C, Molnar RJ, Osadchy T, Li W, Sun X, Li H, Myers-Ward RL, Lee D, Subramanian S, Kim H, Lu K, Robinson JA, Kong W, Kim J. Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes. Nano Lett 2021; 21:4013-4020. [PMID: 33900785 DOI: 10.1021/acs.nanolett.1c00673] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Free-standing crystalline membranes are highly desirable owing to recent developments in heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the release of crystalline membranes from their substrates. However, suppressed nucleation density due to low surface energy has been a challenge for crystallization; reactive materials synthesis environments can induce detrimental damage to vdW surfaces, often leading to failures in membrane release. This work demonstrates a novel platform based on graphitized SiC for fabricating high-quality free-standing membranes. After mechanically removing epitaxial graphene on a graphitized SiC wafer, the quasi-two-dimensional graphene buffer layer (GBL) surface remains intact for epitaxial growth. The reduced vdW gap between the epilayer and substrate enhances epitaxial interaction, promoting remote epitaxy. Significantly improved nucleation and convergent quality of GaN are achieved on the GBL, resulting in the best quality GaN ever grown on two-dimensional materials. The GBL surface exhibits excellent resistance to harsh growth environments, enabling substrate reuse by repeated growth and exfoliation.
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Affiliation(s)
- Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yunpeng Liu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Chansoo Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Richard J Molnar
- MIT Lincoln Laboratory, Lexington, Massachusetts 02421, United States
| | - Tom Osadchy
- MIT Lincoln Laboratory, Lexington, Massachusetts 02421, United States
| | - Wenhao Li
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Xuechun Sun
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Huashan Li
- School of Physics, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China
| | | | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shruti Subramanian
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Wei Kong
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310024, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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7
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Sun J, Luo S, Suetterlin KJ, Song J, Huang J, Zhu W, Xi J, Zhou L, Lu J, Lu J, Zhao C, Hanna MG, Männikkö R, Matthews E, Qiao K. Clinical and genetic spectrum of a Chinese cohort with SCN4A gene mutations. Neuromuscul Disord 2021; 31:829-838. [PMID: 33965302 DOI: 10.1016/j.nmd.2021.03.014] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Revised: 03/02/2021] [Accepted: 03/31/2021] [Indexed: 10/21/2022]
Abstract
Skeletal muscle sodium channelopathies due to SCN4A gene mutations have a broad clinical spectrum. However, each phenotype has been reported in few cases of Chinese origin. We present detailed phenotype and genotype data from a cohort of 40 cases with SCN4A gene mutations seen in neuromuscular diagnostic service in Huashan hospital, Fudan University. Cases were referred from 6 independent provinces from 2010 to 2018. A questionnaire covering demographics, precipitating factors, episodes of paralysis and myotonia was designed to collect the clinical information. Electrodiagnostic studies and muscle MRI were retrospectively analyzed. The clinical spectrum of patients included: 6 Hyperkalemic periodic paralysis (15%), 18 Hypokalemic periodic paralysis (45%), 7 sodium channel myotonia (17.5%), 4 paramyotonia congenita (10%) and 5 heterozygous asymptomatic mutation carriers (12.5%). Review of clinical information highlights a significant delay to diagnosis (median 15 years), reports of pain and myalgia in the majority of patients, male predominance, circadian rhythm and common precipitating factors. Electrodiagnostic studies revealed subclinical myotonic discharges and a positive long exercise test in asymptomatic carriers. Muscle MRI identified edema and fatty infiltration in gastrocnemius and soleus. A total of 13 reported and 2 novel SCN4A mutations were identified with most variants distributed in the transmembrane helix S4 to S6, with a hotspot mutation p.Arg675Gln accounting for 32.5% (13/40) of the cohort. Our study revealed a higher proportion of periodic paralysis in SCN4A-mutated patients compared with cohorts from England and the Netherlands. It also highlights the importance of electrodiagnostic studies in diagnosis and segregation studies.
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Affiliation(s)
- J Sun
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - S Luo
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China; Department of Neurology, North Huashan Hospital, Fudan University, Shanghai, 200003, China
| | - K J Suetterlin
- Department of Neuromuscular Diseases, Queen Square Institute of Neurology, UCL, London, WC1N 3BG, United Kingdom
| | - J Song
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - J Huang
- Department of Clinical Electrophysiology, Institute of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - W Zhu
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - J Xi
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - L Zhou
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - J Lu
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - J Lu
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - C Zhao
- Department of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China
| | - M G Hanna
- Department of Neuromuscular Diseases, Queen Square Institute of Neurology, UCL, London, WC1N 3BG, United Kingdom
| | - R Männikkö
- Department of Neuromuscular Diseases, Queen Square Institute of Neurology, UCL, London, WC1N 3BG, United Kingdom
| | - E Matthews
- Department of Neuromuscular Diseases, Queen Square Institute of Neurology, UCL, London, WC1N 3BG, United Kingdom; Atkinson Morley Neuromuscular Centre, Regional Neurosciences Centre, Department of Neurology, St George's University Hospitals NHS Foundation Trust, London, United Kingdom
| | - K Qiao
- Department of Clinical Electrophysiology, Institute of Neurology, Huashan Hospital, Fudan University, Shanghai, 200040, China.
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8
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Jiang SW, Gao H, Wu L, Wang GW, Cen FL, Li JX, Feng C, Wen JM, Chen Y, He RL, Qiao K, Wang Y, Liu YX, Wang ZQ. [Clinical feature changes of a COVID-19 patient from mild to critical condition and cardiopulmonary pathological results]. Zhonghua Xin Xue Guan Bing Za Zhi 2020; 48:580-586. [PMID: 32455515 DOI: 10.3760/cma.j.cn112148-20200304-00155] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Abstract
Objective: To analyse the clinical history, laboratory tests and pathological data of a patient who suffered from novel coronavirus pneumonia(COVID-19) and provide reference for the clinical treatment of similar cases. Methods: Data of clinical manifestation, laboratory examination, bronchoscopy, echocardiography and cardiopulmonary pathological results were retrospectively reviewed in a case of COVID-19 with rapid exacerbation from mild to critical condition. Results: This patient hospitalized at day 9 post 2019 novel coronavirus(2019-nCoV) infection, experienced progressive deterioration from mild to severe at day 12, severe to critical at day 18 and underwent extracorporeal membrane oxygenation(ECMO) and continuous renal replacement therapy(CRRT) as well as heart lung transplantation during day 28-45 post infection, and died at the second day post heart and lung transplantation. The patient had suffered from hypertension for 8 years. At the early stage of the disease, his symptoms were mild and the inflammatory indices increased and the lymphocyte count decreased continuously. The patient's condition exacerbated rapidly with multi-organ infections, and eventually developed pulmonary hemorrhage and consolidation, pulmonary hypertension, right heart failure, malignant ventricular arrhythmias, liver dysfunction, etc. His clinical manifestations could not be improved despite viral RNAs test results became negative. The patient underwent lung and heart transplantation and finally died of multi organ failure at the second day post lung and heart transplantation. Pathological examination indicated massive mucus, dark red secretions and blood clots in bronchus. The pathological changes were mainly diffused pulmonary hemorrhagic injuries and necrosis, fibrosis, small vessel disease with cardiac edema and lymphocyte infiltration. Conclusions: The clinical course of severe COVID-19 can exacerbate rapidly from mild to critical with lung, liver and heart injuries.
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Affiliation(s)
- S W Jiang
- Department of Cardiology, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - H Gao
- Department of Cardiology, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - L Wu
- Department of Cardiology, Peking University First Hospital, Beijing 100034, China
| | - G W Wang
- Intensive Care Unit, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - F L Cen
- Intensive Care Unit, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - J X Li
- Intensive Care Unit, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - C Feng
- Department of Medical Ultrasonics, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - J M Wen
- Intensive Care Unit, Fuwai Hospital, Chinese Academy of Medical Sciences Shenzhen, Shenzhen 518057, China
| | - Y Chen
- Department of Hemodialysis, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - R L He
- Department of Anesthesia, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - K Qiao
- Department of Cardiothoracic Surgery, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - Y Wang
- Department of Anesthesia, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - Y X Liu
- Administration Office, Shenzhen Third People's Hospitle, Shenzhen 518112, China
| | - Z Q Wang
- Administration Office, Shenzhen Third People's Hospitle, Shenzhen 518112, China
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9
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Bae SH, Lu K, Han Y, Kim S, Qiao K, Choi C, Nie Y, Kim H, Kum HS, Chen P, Kong W, Kang BS, Kim C, Lee J, Baek Y, Shim J, Park J, Joo M, Muller DA, Lee K, Kim J. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy. Nat Nanotechnol 2020; 15:272-276. [PMID: 32042164 DOI: 10.1038/s41565-020-0633-5] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2019] [Accepted: 01/02/2020] [Indexed: 06/10/2023]
Abstract
Although conventional homoepitaxy forms high-quality epitaxial layers1-5, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances6-8, is fundamentally unavoidable in highly lattice-mismatched epitaxy9-11. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.
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Affiliation(s)
- Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yimo Han
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Sungkyu Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yifan Nie
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyun S Kum
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Peng Chen
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Wei Kong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Beom-Seok Kang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chansoo Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jaeyong Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmin Baek
- Electrical and Computer Engineering, Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Jaewoo Shim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jinhee Park
- Materials & Devices Advanced Research Institute, LG Electronics, Seoul, Republic of Korea
| | - Minho Joo
- Materials & Devices Advanced Research Institute, LG Electronics, Seoul, Republic of Korea
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
| | - Kyusang Lee
- Electrical and Computer Engineering, Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA.
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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10
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Kong W, Li H, Qiao K, Kim Y, Lee K, Nie Y, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang Y, Sundram S, Yu Y, Bae SH, Rajan S, Shao-Horn Y, Cho K, Ougazzaden A, Grossman JC, Kim J. Polarity governs atomic interaction through two-dimensional materials. Nat Mater 2018; 17:999-1004. [PMID: 30297812 DOI: 10.1038/s41563-018-0176-4] [Citation(s) in RCA: 86] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2017] [Accepted: 08/28/2018] [Indexed: 05/27/2023]
Abstract
The transparency of two-dimensional (2D) materials to intermolecular interactions of crystalline materials has been an unresolved topic. Here we report that remote atomic interaction through 2D materials is governed by the binding nature, that is, the polarity of atomic bonds, both in the underlying substrates and in 2D material interlayers. Although the potential field from covalent-bonded materials is screened by a monolayer of graphene, that from ionic-bonded materials is strong enough to penetrate through a few layers of graphene. Such field penetration is substantially attenuated by 2D hexagonal boron nitride, which itself has polarization in its atomic bonds. Based on the control of transparency, modulated by the nature of materials as well as interlayer thickness, various types of single-crystalline materials across the periodic table can be epitaxially grown on 2D material-coated substrates. The epitaxial films can subsequently be released as free-standing membranes, which provides unique opportunities for the heterointegration of arbitrary single-crystalline thin films in functional applications.
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Affiliation(s)
- Wei Kong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Huashan Li
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Sino-French Institute for Nuclear Energy and Technology, Sun Yat-Sen University, Guangzhou, China
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yunjo Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kyusang Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Departments of Electrical and Computer Engineering & Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Yifan Nie
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | | | | | | | | | - Yuewei Zhang
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA
| | - Suresh Sundram
- School of Electrical and Computer Engineering, Georgia Institute of Technology, GT-Lorraine, UMI 2958 Georgia Tech-CNRS, Metz, France
| | - Yang Yu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Siddharth Rajan
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA
| | - Yang Shao-Horn
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA
| | - Abdallah Ougazzaden
- School of Electrical and Computer Engineering, Georgia Institute of Technology, GT-Lorraine, UMI 2958 Georgia Tech-CNRS, Metz, France
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
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11
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Shim J, Bae SH, Kong W, Lee D, Qiao K, Nezich D, Park YJ, Zhao R, Sundaram S, Li X, Yeon H, Choi C, Kum H, Yue R, Zhou G, Ou Y, Lee K, Moodera J, Zhao X, Ahn JH, Hinkle C, Ougazzaden A, Kim J. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials. Science 2018; 362:665-670. [DOI: 10.1126/science.aat8126] [Citation(s) in RCA: 145] [Impact Index Per Article: 24.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2018] [Revised: 08/11/2018] [Accepted: 09/21/2018] [Indexed: 01/18/2023]
Abstract
Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.
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Affiliation(s)
- Jaewoo Shim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Wei Kong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Daniel Nezich
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Yong Ju Park
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Ruike Zhao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH, USA
| | - Suresh Sundaram
- School of Electrical and Computer Engineering, Georgia Institute of Technology, UMI 2958 GT-CNRS, GT-Lorraine, Metz, France
| | - Xin Li
- School of Electrical and Computer Engineering, Georgia Institute of Technology, UMI 2958 GT-CNRS, GT-Lorraine, Metz, France
| | - Hanwool Yeon
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyun Kum
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ruoyu Yue
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA
| | - Guanyu Zhou
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA
| | - Yunbo Ou
- Department of Physics, and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kyusang Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Departments of Electrical and Computer Engineering and Materials Science Engineering, University of Virginia, Charlottesville, VA, USA
| | - Jagadeesh Moodera
- Department of Physics, and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xuanhe Zhao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Christopher Hinkle
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
| | - Abdallah Ougazzaden
- School of Electrical and Computer Engineering, Georgia Institute of Technology, UMI 2958 GT-CNRS, GT-Lorraine, Metz, France
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Microsystem Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
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12
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Wan L, Qiao K, Sun XN, Di ZC, Fang Z, Li ZJ, Guo K. Benzylation of heterocyclic N-oxides via direct oxidative cross-dehydrogenative coupling with toluene derivatives. NEW J CHEM 2016. [DOI: 10.1039/c6nj02560a] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A novel cross-dehydrogenative coupling (CDC) of heterocyclic N-oxides with toluene derivatives has been disclosed.
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Affiliation(s)
- L. Wan
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
| | - K. Qiao
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
| | - X. N. Sun
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
| | - Z. C. Di
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
| | - Z. Fang
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
| | - Z. J. Li
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
| | - K. Guo
- College of Biotechnology and Pharmaceutical Engineering
- Nanjing Tech University
- 30 Puzhu South Road
- Nanjing
- P. R. China
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13
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Liu Y, Ye X, Zhang JB, Ouyang H, Shen Z, Wu Y, Wang W, Wu J, Tao S, Yang X, Qiao K, Zhang J, Liu J, Fu Q, Xie Y. PROX1 promotes hepatocellular carcinoma proliferation and sorafenib resistance by enhancing β-catenin expression and nuclear translocation. Oncogene 2015; 34:5524-35. [PMID: 25684142 DOI: 10.1038/onc.2015.7] [Citation(s) in RCA: 65] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2014] [Revised: 11/19/2014] [Accepted: 11/25/2014] [Indexed: 12/13/2022]
Abstract
Aberrant activation of the Wnt/β-catenin pathway is frequent in hepatocellular carcinoma (HCC) and contributes to HCC initiation and progression. This abnormal activation may result from somatic mutations in the genes of the Wnt/β-catenin pathway and/or dysregulation of the Wnt/β-catenin pathway. The mechanism for the latter remains poorly understood. Prospero-related homeobox 1 (PROX1) is a downstream target of the Wnt/β-catenin pathway in human colorectal cancer and elevated PROX1 expression promotes malignant progression. However, the Wnt/β-catenin pathway does not regulate PROX1 expression in the liver and HCC cells. Here we report that PROX1 promotes HCC cell proliferation in vitro and tumor growth in HCC xenograft mice. PROX1 and β-catenin levels are positively correlated in tumor tissues as well as in cultured HCC cells. PROX1 can upregulate β-catenin transcription by stimulating the β-catenin promoter and enhance the nuclear translocation of β-catenin in HCC cells, which leads to the activation of the Wnt/β-catenin pathway. Moreover, we show that increase in PROX1 expression renders HCC cells more resistant to sorafenib treatment, which is the standard therapy for advanced HCC. Overall, we have pinpointed PROX1 as a critical factor activating the Wnt/β-catenin pathway in HCC, which promotes HCC proliferation and sorafenib resistance.
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Affiliation(s)
- Y Liu
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China.,Department of Surgery, Huashan Hospital, Fudan University, Shanghai, China
| | - X Ye
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - J-B Zhang
- Liver Cancer Institute, Zhongshan Hospital; Key Laboratory of Carcinogenesis and Cancer Invasion (MOE), Fudan University, Shanghai, China
| | - H Ouyang
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China.,Institute of Biochemistry and Cell Biology, Shanghai Institutes for Biological Sciences, Chinese Academy of Sciences, Shanghai, China
| | - Z Shen
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - Y Wu
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - W Wang
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - J Wu
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - S Tao
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - X Yang
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - K Qiao
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - J Zhang
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - J Liu
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
| | - Q Fu
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China.,Department of Immunology, Binzhou Medical University, Yantai, China
| | - Y Xie
- Key Laboratory of Medical Molecular Virology (MOE & MOH), Institute of Biomedical Sciences, Shanghai Medical College, Fudan University, Shanghai, China
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Qiao K, Huang J, Lu C, Wu Z. 73. Correlation study between (CAG) n/(GGC) n microsatellites and electrophysiological changes in chinese spinal bulbar muscular atrophy patients. Clin Neurophysiol 2012. [DOI: 10.1016/j.clinph.2011.11.155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
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Lan R, Yang C, Lan L, Ou J, Qiao K, Liu F, Gao Q. Mycobacterium tuberculosis and non-tuberculous mycobacteria isolates from HIV-infected patients in Guangxi, China. Int J Tuberc Lung Dis 2012; 15:1669-75. [PMID: 22118176 DOI: 10.5588/ijtld.11.0036] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
BACKGROUND Tuberculosis (TB) remains the leading cause of death among human immunodeficiency virus (HIV) infected persons. The prevalence of infection with Mycobacterium tuberculosis and non-tuberculous mycobacteria (NTM) in HIV-infected patients in China is unknown. OBJECTIVE To estimate the prevalence of M. tuberculosis and NTM in HIV-infected patients in Guangxi Province, determine their drug resistance profiles, and evaluate the genotype patterns of M. tuberculosis strains. DESIGN Samples were collected from two HIV designated hospitals in Guangxi Province between 2005 and 2008. HIV-infected patients who were culture-positive for mycobacteria were included. Drug susceptibility testing was performed for mycobacterial isolates. NTM species was identified by sequencing, and M. tuberculosis isolates were genotyped using the variable number of tandem repeats method. RESULTS M. tuberculosis and NTM were identified in respectively 117 (53%) and 102 (47%) HIV-infected patients. Drug resistance was found in 27% and multi-drug-resistant TB (MDR-TB) in 11% of the patients with TB. Previous treatment for TB was significantly associated with MDR-TB. Twenty (17%) TB patients belonged to eight VNTR-defined clusters. CONCLUSION The high frequency of NTM among HIV-infected patients raises concerns about accurate species identification before the determination of appropriate treatment. The potential for TB transmission exists among HIV-infected patients. Intensified screening and effective treatment of TB-HIV co-infected patients is urgently needed.
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Affiliation(s)
- R Lan
- Guangxi Zhuang Autonomous Region Center for Disease Control and Prevention, Nanning, Guangxi, China
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Qiao K, Hyde TW. Structural phase transitions and out-of-plane dust lattice instabilities in vertically confined plasma crystals. Phys Rev E Stat Nonlin Soft Matter Phys 2005; 71:026406. [PMID: 15783428 DOI: 10.1103/physreve.71.026406] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2004] [Revised: 11/15/2004] [Indexed: 05/24/2023]
Abstract
The formation of plasma crystals confined in an external one-dimensional parabolic potential well is simulated for a normal experimental environment employing a computer code called BOX_TREE. Under appropriate conditions, crystals were found to form layered systems. The system's structural phase transitions, including transitions between crystals with differing numbers of layers and the same number of layers but different intralayer structures, were investigated and found to agree with previous theoretical and experimental research results. One- to two-layer transitions were examined in detail and shown to start at the point where the out-of-plane lattice instability appears. The resulting three layer system caused by this instability was observed at the center of the system. Finally, growth rates for this out-of-plane lattice instability were obtained using the BOX_TREE simulation with these results shown to agree with those obtained from analytical theory.
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Affiliation(s)
- K Qiao
- Center for Astrophysics, Space Physics and Engineering Research, Baylor University, Waco, Texas 76798-7310, USA
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Qiao K, Hyde TW. Dispersion properties of the out-of-plane transverse wave in a two-dimensional Coulomb crystal. Phys Rev E Stat Nonlin Soft Matter Phys 2003; 68:046403. [PMID: 14683050 DOI: 10.1103/physreve.68.046403] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2003] [Indexed: 05/24/2023]
Abstract
The formation of a two-dimensional (2D) Coulomb crystal in a typical experimental environment was simulated with a computer code called BOX_TREE. The dispersion properties of a novel dust lattice wave (DLW) mode, the out-of-plane transverse wave, were obtained. The dispersion relation was determined to be an opticlike inverse dispersion when wave number k is lower than a critical value k(critical), and a positive dispersion when k>k(critical). The negative group velocity of the wave for k<k(critical) depends on the kappa value (with kappa=a/lambda(D), where a is the interparticle spacing and lambda(D) is the Debye length) and the positive group velocity for k>k(critical) depends on the propagation direction. The value of k(critical) depends on both kappa and propagation direction, but changes very little for all propagation directions and the range of kappa investigated. An analytical method has also been used to derive the dispersion relations assuming a hexagonal 2D lattice and Yukawa interparticle potential. These dispersion relations compare favorably with the simulation results. The dispersion relation for a 1D string was also obtained via BOX_TREE simulation and shown to agree with the analytical result given by Vladimirov [Physica A 315, 222 (2002)]. Comparison shows that the out-of-plane transverse DLW in a 2D lattice when k<k(critical) has a negative group velocity much larger than that of the 1D string, given the same particle parameters and operating environment. Again k(critical) for 1D string and 2D lattice are in the same range.
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Affiliation(s)
- K Qiao
- Center for Astrophysics, Space Physics, and Engineering Research, Baylor University, Waco, Texas 76798-7310, USA
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