Miniaturized On-Ground 2.4 GHz IoT LTCC Chip Antenna and Its Positioning on a Ground Plane

This paper presents a very low-profile on-ground chip antenna with a total volume of 0.075λ0× 0.056λ0× 0.019λ0 (at f0 = 2.4 GHz). The proposed design is a corrugated (accordion-like) planar inverted F antenna (PIFA) embedded in low-loss glass ceramic material (DuPont GreenTape 9k7 with ϵr = 7.1 and tanδ = 0.0009) fabricated with LTCC technology. The antenna does not require a clearance area on the ground plane where the antenna is located, and it is proposed for 2.4 GHz IoT applications for extreme size-limited devices. It shows a 25 MHz impedance bandwidth (for S11 < -6 dB), which means a relative bandwidth of 1%). A study in terms of matching and total efficiency is performed for several size ground planes with the antenna installed at different positions. The use of characteristic modes analysis (CMA) and the correlation between modal and total radiated fields is performed to demonstrate the optimum position of the antenna. Results show high-frequency stability and a total efficiency difference of up to 5.3 dB if the antenna is not placed at the optimum position.

Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect

We report on the enhancement of responsivity by more than one order of magnitude of a silicon-based sub-terahertz detector when a mesoscopic dielectric particle was used to localize incident radiation to a sub-wavelength volume and focus it directly onto the detector. A strained-silicon modulation field-effect transistor was used as a direct detector on an incident terahertz beam at 0.3 THz. A systematic study in which Teflon cubes were placed in front of the detector to focus the terahertz beam was performed. In this study, cubes with different sizes were investigated, and an enhancement of the responsivity up to 11 dB was observed for a cube with an edge length of 3.45 mm (or 3.45λ). Electromagnetic simulation results were in good agreement with the experimental ones and demonstrated that the size of the mesoscopic particle plays an important role in focalizing the electric field within an area below the diffraction limit. This approach provides an efficient, uncostly, and easy to implement method to substantially improve the responsivity and noise equivalent power of sub-terahertz detectors.

Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz. The device response in the photovoltaic mode was non-resonant, in agreement with the Dyakonov and Shur model for plasma waves detectors. The maximum of the photoresponse was clearly higher under THz illumination at 0.15 THz than at 0.3 THz. A numerical study was conducted using three-dimensional (3D) electromagnetic simulations to delve into the coupling of THz radiation to the channel of the transistor. 3D simulations solving the Maxwell equations using a time-domain solver were performed. Simulations considering the full transistor structure, but without taking into account the bonding wires used to contact the transistor pads in experiments, showed an irrelevant role of the gate length in the coupling of the radiation to the device channel. Simulations, in contradiction with measurements, pointed to a better response at 0.3 THz than under 0.15 THz excitation in terms of the normalized electric field inside the channel. When including four 0.25 mm long bonding wires connected to the contact pads on the transistor, the normalized internal electric field induced along the transistor channel by the 0.15 THz beam was increased in 25 dB, revealing, therefore, the important role played by the bonding wires at this frequency. As a result, the more intense response of the transistor at 0.15 THz than at 0.3 THz experimentally found, must be attributed to the bonding wires.