Statistical Design-Guided Synthesis of Nanoarchitectonics of High-Performance NiFeMoN Electrocatalyst through Facile One-Step Magnetron Sputtering

This study presents an innovative, statistically-guided magnetron sputtering technique for creating nanoarchitectonics of high-performing, NiFeMoN electrocatalysts for oxygen evolution reaction (OER) in water splitting. Using a central composite face-centered (CCF) design, 13 experimental conditions are identified that enable precise optimization of synthesis parameters through response surface methodology (RSM), confirmed by analysis of variance (ANOVA). The statistical analysis highlighted a interaction between Mo% and N% in the nanostructured NiFeMoN and found optimizing values at 31.35% Mo and 47.12% N. The NiFeMoN catalyst demonstrated superior performance with a low overpotential of 216 mV at 10 mA cm-2 and remarkable stability over seven days, attributed to the modifications in electronic structure and the creation of new active sites through Mo and N additions. Furthermore, the NiFeMoN coating, when used as a protective layer for a Si photoanode in 1 m KOH, achieved an applied-bias photon-to-current efficiency (ABPE) of 5.2%, maintaining stability for 76 h. These advancements underscore the profound potential of employing statistical design for optimizing synthesis parameters of intricate catalyst materials via magnetron sputtering, paving the way for accelerated advancements in water splitting technologies and also in other energy conversion systems, such as nitrogen reduction and CO2 conversion.

Ferri-hydrite: A Novel Electron-Selective Contact Layer for InP Photovoltaic and Photoelectrochemical Cells

Solar energy conversion devices with charge-selective contacts are attracting significant research interest as a cost-effective alternative to homojunction counterparts. This study presents a novel approach for fabricating high-performance solar cells based on InP heterojunctions using a solution-processed ferri-hydrite (Fh) electron-selective contact (ESC). The champion cell efficiency of 16.6% is achieved, which is a significant improvement over those from previous studies using other solution-processed ESC materials. X-ray photoelectron spectroscopy measurements showed that the low conduction band offset at the Fh-InP interface facilitated selective transport of photogenerated electrons from InP. Moreover, the Fh electron-selective contact layer provided an excellent photoelectrochemical half-cell water reduction efficiency of 8.4%. The Fh layer not only selectively extracts photogenerated electrons from InP but also simultaneously serves as a surface protection layer, improving the cell's long-term stability. These results demonstrate the potential of Fh as a low-cost and easily fabricated material for use in high-efficiency photovoltaic and photoelectrochemical devices. Our findings pave the way for further improvements in the efficiency of InP heterojunction solar cells by addressing the losses incurred in the cells.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×109cm-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.

Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique

Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down approach, combining self-assembled random mask and plasma etching techniques. We describe the deposition of Au/SiO₂ layers to prepare random etch mask. We then detail the fabrication of nanopillars and photocathodes. Finally, we demonstrate III-V semiconductor nanopillars as a photoelectrode for photoelectrochemical water splitting. For complete details on the use and execution of this protocol, please refer to Narangari et al. (2021).¹.

Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting

Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoliation technique. The protocol details the fabrication procedure for producing thin monocrystalline semiconductors with thicknesses in the range of a few tens of micrometers from thick donor substrates. In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochemical water-splitting to produce hydrogen fuel. For complete details on the use and execution of this protocol, please refer to Lee et al. (2021).

Bi2 S3 -In2 S3 Heterostructures for Efficient Photoreduction of Highly Toxic Cr6+ Enabled by Facet-Coupling and Z-Scheme Structure

The construction of Z-scheme photocatalyst materials mimicking the natural photosynthesis system provides many advantages, including increased light harvesting, spatially separated reductive and oxidative active sites and strong redox ability. Here, a novel Bi₂ S₃ nanorod@In₂ S₃ nanoparticle heterojunction photocatalyst synthesized through one-pot hydrothermal method for Cr⁶⁺ reduction is reported. A systematic investigation of the microstructural and compositional characteristics of the heterojunction catalyst confirms an intimate facet coupling between (440) crystal facet of In₂ S₃ and (060) crystal facet of Bi₂ S₃ , which provides a robust heterojunction interface for charge transfer. When tested under visible-light irradiation, the Bi₂ S₃ -In₂ S₃ heterojunction photocatalyst with 15% Bi₂ S₃ loading content achieves the highest Cr⁶⁺ photoreduction efficiency of nearly 100% with excellent stability, which is among the best-reported performances for Cr⁶⁺ removal. Further examination using optical, photoelectrochemical, impedance spectroscopy, and electron spin resonance spectroscopy characterizations reveal greatly improved photogenerated charge separation and transfer efficiency, and confirm Z-scheme electronic structure of the photocatalyst. The Z-scheme Bi₂ S₃ -In₂ S₃ photocatalyst demonstrated here presents promise for the removal of highly toxic Cr⁶⁺ , and could also be of interest in photocatalytic energy conversion.

Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution

With a band gap close to the Shockley-Quiesser limit and excellent conduction band alignment with the water reduction potential, InP is an ideal photocathode material for photoelectrochemical (PEC) water reduction. Here, we develop facile self-assembled Au nanodots based on dewetting phenomena as a masking technique to fabricate wafer-scale InP nanowires (NWs) via a top-down approach. In addition, we report dual-function wet treatment using sulfur-dissolved oleylamine (S-OA) to remove a plasma-damaged surface in a controlled manner and stabilize InP NWs against surface corrosion in harsh electrolyte solutions. The resulting InP NW photocathodes exhibit an excellent photocurrent density of 33 mA/cm² under 1 sun illumination in 1 M HCl with a highly stabilized performance without needing additional protection layers. Our approach combining large-area NW fabrication and surface engineering synergistically enhances light harvesting and PEC performance and stability, thereby providing a pathway for the development of efficient and durable InP photoelectrodes in a scalable manner.

Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting

Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 μm thickness are demonstrated by incorporating a nickel oxide (NiO_x) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn⁺ junction, to generate a photo-current density of 23.43 mA/cm² with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices.

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Design and fabrication of thin Si photoanode using crack-assisted layer exfoliation

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A systematic investigation of the crack-assisted layer exfoliation method

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Optical simulation on the dependence of photoelectrochemical performance on Si thickness

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Demonstration of thin Si photoanode with notable photoelectrochemical performance

Hole-Storage Enhanced a-Si Photocathodes for Efficient Hydrogen Production

Ferrihydrite (Fh) has been demonstrated as an effective interfacial layer for photoanodes to achieve outstanding photoelectrochemical (PEC) performance for water oxidation reaction owing to its unique hole-storage function. However, it is unknown whether such a hole-storage layer can be used to construct highly efficient photocathodes for hydrogen evolution reaction (HER). In this work, we report Fh interfacial engineering of amorphous silicon photocathode (with nickel as HER cocatalyst) achieving a photocurrent density of 15.6 mA cm^-2 at 0 V vs. the reversible hydrogen electrode and a half-cell energy conversion efficiency of 4.08 % in alkaline solution, outperforming most of reported a-Si based photocathodes including multi-junction configurations integrated with noble metal cocatalysts in acid solution. Besides, the photocurrent density is maintained above 14 mA cm^-2 for 175 min with 100 % Faradaic efficiency for HER in alkaline solution. Our results demonstrate a feasible approach to construct efficient photocathodes via the application of a hole-storage layer.

Preferential T-cell receptor beta-chain variable gene use in myelin basic protein-reactive T-cell clones from patients with multiple sclerosis

Multiple sclerosis is an autoimmune disease in which T lymphocytes reactive to myelin basic protein (BP) could play a central role. T cells specific for BP were cloned from the blood of multiple sclerosis patients and normal individuals, and expression of T-cell receptor variable region genes was analyzed. A remarkable bias for use of beta-chain variable region (V beta) 5.2 and, to a lesser extent, V beta 6.1 was seen among BP-specific clones from patients but not from controls. The preferential use of V beta 5.2 for BP recognition did not reflect altered expression of this V beta in the peripheral repertoire. Interestingly, shared V beta 5.2 usage was apparent for clones specific for different BP determinants, even when derived from the same individual. The concurrent demonstration by others (J. R. Oksenberg, M. A. Panzara, A. B. Begovich, H. Erlich, R. Murray, M. Sherritt, S. Stuart, C. C. Bernard, and L. Steinman, personal communication) that T cells within demyelinating areas of multiple sclerosis brains preferentially express V beta 5.2 and V beta 6.1 suggests that the BP-specific clones derived from blood may be relevant to disease pathogenesis. These findings may have important implications for the treatment of multiple sclerosis.