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Qu Y, Xu H, Hu J, Wang F, Liu Y. Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain. Sci Rep 2024; 14:9414. [PMID: 38658733 PMCID: PMC11043405 DOI: 10.1038/s41598-024-60190-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 04/19/2024] [Indexed: 04/26/2024] Open
Abstract
The h-BN/diamond mix-dimensional heterostructure has broad application prospects in the fields of optoelectronic devices and power electronic devices. In this paper, the electronic properties and band offsets of hexagonal boron nitride (h-BN)/(H, O, F, OH)-diamond (111) heterostructures were studied by first-principles calculations under biaxial strain. The results show that different terminals could significantly affect the interface binding energy and charge transfer of h-BN/diamond heterostructure. All heterostructures exhibited semiconductor properties. The h-BN/(H, F)-diamond systems were indirect bandgap, while h-BN/(O, OH)-diamond systems were direct bandgap. In addition, the four systems all formed type-II heterostructures, among which h-BN/H-diamond had the largest band offset, indicating that the system was more conducive to the separation of electrons and holes. Under biaxial strain the bandgap values of the h-BN/H-diamond system decreased, and the band type occurred direct-indirect transition. The bandgap of h-BN/(O, F, OH)-diamond system increased linearly in whole range, and the band type only transformed under large strain. On the other hand, biaxial strain could significantly change the band offset of h-BN/diamond heterostructure and promote the application of this heterostructure in different fields. Our work provides theoretical guidance for the regulation of the electrical properties of h-BN/diamond heterostructures by biaxial strain.
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Affiliation(s)
- Yipu Qu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
| | - Hang Xu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China
| | - Jiping Hu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China
| | - Fang Wang
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Research Institute of Industrial Technology Co. Ltd, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Zhengzhou Way Do Electronics Co. Ltd, Zhengzhou, 450001, Henan, People's Republic of China.
| | - Yuhuai Liu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Research Institute of Industrial Technology Co. Ltd, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Zhengzhou Way Do Electronics Co. Ltd, Zhengzhou, 450001, Henan, People's Republic of China.
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Petala A, Noe A, Frontistis Z, Drivas C, Kennou S, Mantzavinos D, Kondarides DI. Synthesis and characterization of CoO x/BiVO 4 photocatalysts for the degradation of propyl paraben. J Hazard Mater 2019; 372:52-60. [PMID: 29567302 DOI: 10.1016/j.jhazmat.2018.03.008] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2017] [Revised: 03/05/2018] [Accepted: 03/06/2018] [Indexed: 06/08/2023]
Abstract
Cobalt-promoted bismuth vanadate photocatalysts of variable cobalt content (0-1.0 wt.%) were synthesized and characterized with various techniques including BET, XRD, DRS, XPS and TEM. BiVO4 exists in the monoclinic scheelite structure, while cobalt addition improves the absorbance in the visible region although it does not affect the band gap energy of BiVO4. Cobalt exists in the form of well-dispersed Co3O4 nanocrystallites, which are in intimate contact with the much larger BiVO4 nanoparticles. Photocatalytic activity was evaluated for the degradation of propyl paraben (PP) under simulated solar radiation. The activity of pristine BiVO4 is significantly improved adding small amounts of cobalt and is maximized for the catalyst containing 0.5 wt.% Co. PP degradation in ultrapure pure water increases with increasing photocatalyst loading (100 mg/L to 1.5 g/L), and decreasing PP concentration (1600-200 μg/L). Experiments in bottled water, as well as in pure water spiked with bicarbonate and chloride ions showed little effect of non-target inorganics on degradation. Conversely, degradation is severely impeded in secondary treated wastewater. The enhancement of the photocatalytic activity of the synthesized catalysts is attributed to efficient electron-hole separation, achieved at the p-n junction formed between the p-type Co3O4 and the n-type BiVO4 semiconductors.
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Affiliation(s)
- Athanasia Petala
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece
| | - Antigoni Noe
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece
| | - Zacharias Frontistis
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece
| | - Charalampos Drivas
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece
| | - Stella Kennou
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece
| | - Dionissios Mantzavinos
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece
| | - Dimitris I Kondarides
- Department of Chemical Engineering, University of Patras, Caratheodory 1, GR-26504 Patras, Greece.
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