Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes.
NANOSCALE RESEARCH LETTERS 2019;
14:40. [PMID:
30706287 PMCID:
PMC6355890 DOI:
10.1186/s11671-019-2872-7]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2018] [Accepted: 01/20/2019] [Indexed: 05/31/2023]
Abstract
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm- 2. With the electrical performance measurements conducted, the SBDs show a low turn-on voltage Von (0.70~0.78 V) and high current Ion/Ioff ratio (9.9 × 107~1.3 × 1010). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5 ns for the 100-, 200-, 300-, 400-, and 500-μm-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.
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