Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar+ ion beam: a comparative study

Desired modifications of surfaces at the nanoscale may be achieved using energetic ion beams. In the present work, a complete study of self-assembled ripple pattern fabrication on Si and Ge by 100 keV Ar+ ion beam bombardment is discussed. The irradiation was performed in the ion fluence range of ≈3 × 1017 to 9 × 1017 ions/cm2 and at an incident angle of θ ≈ 60° with respect to the surface normal. The investigation focuses on topographical studies of pattern formation using atomic force microscopy, and induced damage profiles inside Si and Ge by Rutherford backscattering spectrometry and transmission electron microscopy. The ripple wavelength was found to scale with ion fluence, and energetic ions created more defects inside Si as compared to that of Ge. Although earlier reports suggested that Ge is resistant to structural changes upon Ar+ ion irradiation, in the present case, a ripple pattern is observed on both Si and Ge. The irradiated Si and Ge targets clearly show visible damage peaks between channel numbers (1000-1100) for Si and (1500-1600) for Ge. The clustering of defects leads to a subsequent increase of the damage peak in irradiated samples (for an ion fluence of ≈9 × 1017 ions/cm2) compared to that in unirradiated samples.

Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions

Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO. However, the ballistic nature of this process makes the use of annealing essential. The selection of implantation parameters, as well as post-implantation annealing, turns out to be non-trivial because they determine the luminous efficiency of the ZnO:RE system. This paper presents a comprehensive study of the optimal implantation and annealing conditions, ensuring the most efficient luminescence of RE³⁺ ions in the ZnO matrix. Deep and shallow implantations, implantations performed at high and room temperature with various fluencies, as well as a range of post-RT implantation annealing processes are tested: rapid thermal annealing (minute duration) under different temperatures, times, and atmospheres (O₂, N₂, and Ar), flash lamp annealing (millisecond duration) and pulse plasma annealing (microsecond duration). It is shown that the highest luminescence efficiency of RE³⁺ is obtained for the shallow implantation at RT with the optimal fluence of 1.0 × 10¹⁵ RE ions/cm² followed by a 10 min annealing in oxygen at 800 °C, and the light emission from such a ZnO:RE system is so bright that can be observed with the naked eye.

Determining the chronological sequence of inks deposited with different writing and printing tools using ion beam analysis

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

Effect of Soft X-ray Irradiation on Film Properties of a Hydrogenated Si-Containing DLC Film

The effect of soft X-ray irradiation on hydrogenated silicon-containing diamond-like carbon (Si-DLC) films intended for outer space applications was investigated by using synchrotron radiation (SR). We found that the reduction in film thickness was about 60 nm after 1600 mA·h SR exposure, whereas there was little change in their elemental composition. The reduction in volume was attributable to photoetching caused by SR, unlike the desorption of hydrogen in the case of exposure of hydrogenated DLC (H-DLC) film to soft X-rays. The ratio of the sp² hybridization carbon and sp³ hybridization carbon in the hydrogenated Si-DLC films, sp²/(sp² + sp³) ratio, increased rapidly from ~0.2 to ~0.5 for SR doses of less than 20 mA·h. SR exposure significantly changed the local structure of carbon atoms near the surface of the hydrogenated Si-DLC film. The rate of volume reduction in the irradiated hydrogenated Si-DLC film was 80 times less than that of the H-DLC film. Doping DLC film with Si thus suppresses the volume reduction caused by exposure to soft X-rays.

Reverse osmosis membrane composition, structure and performance modification by bisulphite, iron(III), bromide and chlorite exposure

Reverse osmosis (RO) membrane exposure to bisulphite, chlorite, bromide and iron(III) was assessed in terms of membrane composition, structure and performance. Membrane composition was determined by Rutherford backscattering spectrometry (RBS) and membrane performance was assessed by water and chloride permeation, using a modified version of the solution-diffusion model. Iron(III) dosage in presence of bisulphite led to an autooxidation of the latter, probably generating free radicals which damaged the membrane. It comprised a significant raise in chloride passage (chloride permeation coefficient increased 5.3-5.1 fold compared to the virgin membrane under the conditions studied) rapidly. No major differences in terms of water permeability and membrane composition were observed. Nevertheless, an increase in the size of the network pores, and a raise in the fraction of aggregate pores of the polyamide (PA) layer were identified, but no amide bond cleavage was observed. These structural changes were therefore, in accordance with the transport properties observed.

Stabilization of the GeO2/Ge Interface by Nitrogen Incorporation in a One-Step NO Thermal Oxynitridation

The thermal instability of GeO₂/Ge structures lasts as a barrier against the development of Ge-based metal-oxide-semiconductor devices. In the present work, stabilization was achieved through the incorporation of nitrogen into the oxide layer by thermally growing GeO_xN_y films in NO. With this approach, a stable layer is obtained in a single step as opposed to other nitridation techniques (like plasma immersion) which require additional processing. Significant reduction of GeO desorption from the surface and a strong barrier against additional substrate oxidation were obtained by the insertion of a small amount of nitrogen content (N/O ≈ 10%). Nuclear reaction analysis and profiling showed that nitrogen incorporation and removal occur simultaneously during film growth, yielding N to be distributed throughout the whole film, without accumulation in any particular region. Both the oxidation barrier and the lower GeO desorption rate are explained by a reduction of vacancy diffusivity inside the dielectric. This is not caused by the densification of the oxide, but is a consequence of nitrogen blockage of oxygen vacancy diffusion paths.

A study on the consequence of swift heavy ion irradiation of Zn-silica nanocomposite thin films: electronic sputtering

Zn-silica nanocomposite thin films with varying Zn metal content, deposited by atom beam sputtering technique were subjected to 100 MeV Ag ion irradiation. Rutherford backscattering spectrometry reveals the loss of Zn with irradiation, which is observed to be greater from thin films with lower Zn content. The sputtered species collected on carbon-coated transmission electron microscopy (TEM) grids consist of Zn nanoparticles of sizes comparable to those present in the nanocomposite thin film. The process of size-dependent electronic sputtering of Zn is explained on the basis of an inelastic thermal spike model. The possibility of direct cluster emission is explained by pressure spike built inside the track, initiated by a temperature spike.