Atomic Diffusion Engineered PtSnCu Nanoframes with High-Index Facets Boost Ethanol Oxidation

Electrochemical ethanol oxidation is crucial to directly convert a biorenewable liquid fuel with high energy density into electrical energy, but it remains an inefficient reaction even with the best catalysts. To boost ethanol oxidation, developing multimetallic nanoalloy has emerged as one of the most effective strategies, yet faces a challenge in the rational engineering of multimetallic active-site ensembles at atomic-level. Herein, starting from typical PtCu nanocrystals, an atomic Sn diffusion strategy is developed to construct well-defined Pt47Sn12Cu41 octopod nanoframes, which is enclosed by high-index facets of n (111)-(111), such as {331} and {221}. Pt47Sn12Cu41 achieves a high mass activity of 3.10 A mg-1 Pt and promotes the C-C bond breaking and oxidation of poisonous CO intermediate, representing a state-of-the-art electrocatalyst toward ethanol oxidation in acidic electrolyte. Density functional theory （DFT） calculations have confirmed that the introduction of Sn improves the electroactivity by uplifting the d-band center through the s-p-d coupling. Meanwhile, the strong binding of ethanol and the reduced energy barrier of CO oxidation guarantee a highly efficient ethanol oxidation process with improved Faradic efficiency of C1 products. This work offers a promising strategy for constructing novel multimetallic nanoalloys tailored by atomic metal sites as the efficient electrocatalysts.

First-Principles Study of Atomic Diffusion by Vacancy Defect of the L12-Al3M (M = Sc, Zr, Er, Y) Phase

Atomic diffusion by the vacancy defect of L12-Al3M (M = Sc, Zr, Er, Y) was investigated based on a first-principles calculation. The point defect formation energies were firstly evaluated. Then, the migration energy for different diffusion paths was obtained by the climbing-image nudged elastic band (CI-NEB) method. The results showed that Al atomic and M atomic diffusions through nearest-neighbor jump (NNJ) mediated by Al vacancy (VAl) were, respectively, the preferred diffusion paths in Al3M phases under both Al-rich and M-rich conditions. The other mechanisms, such as six-jump cycle (6JC) and next-nearest-neighbor jump (NNNJ), were energetically inhibited. The order of activation barriers for NNJ(Al-VAl) was Al3Zr < Al3Y < Al3Er < Al3Sc. The Al3Sc phase had high stability with a high self-diffusion activation barrier, while the Al3Zr and Al3Y phases were relatively unstable with a low self-diffusion activation energy. Moreover, the atomic-diffusion behavior between the core and shell layers of L12-Al3M was also further investigated. Zr atoms were prone to diffusion into the Al3Y core layer, resulting in no stable core-shelled Al3(Y,Zr), which well agreed with experimental observation.

The Atomic Observation of the Structural Change Process in Pt Networks in Air Using Environmental Cell Scanning Transmission Electron Microscopy

The structural change in Pt networks composed of multiple chain connections among grains was observed in air at 1 atm using atomic-resolution environmental cell scanning transmission electron microscopy. An aberration-corrected incident electron probe with a wide convergence angle made it possible to increase the depth resolution that contributes to enhancing the signal-to-noise ratio of Pt network samples in air in an environmental cell, resulting in the achievement of atomic-resolution imaging. The exposure of the Pt networks to gas molecules under Brownian motion, stimulated by electron beams in the air, increases the collision probability between gas molecules and Pt networks, and the Pt networks are more intensely stressed from all directions than in a situation without electron irradiation. By increasing the electron beam dose rate, the structural change of the Pt networks became significant. Dynamic observation on an atomic scale suggested that the structural change of the networks was not attributed to the surface atomic-diffusion-induced step motion but mainly caused by the movement and deformation of unstable grains and grain boundaries. The oxidized surface layers may be one of the factors hindering the surface atomic step motion, mitigating the change in the size of the grains and grain boundaries.

Diffusion in Copper/Cobalt Systems under High Magnetic Fields

Comprehensive research on a high magnetic field’s effect on diffusion is lacking; hence, this study investigates the effect of the magnetization of such a field on diffusion using a copper/cobalt diffusion couple in the diamagnetic/ferromagnetic states, respectively. The diffusion couple was formed using explosive welding to avoid diffusion during manufacturing. The diffusion couple annealed within a temperature range of 1165–1265 K under a 0–6-T high magnetic field. The angle between the diffusion and magnetic field directions was set as 0° and then 180°. The penetration profiles of cobalt volume diffusion in the copper and grain-boundary diffusion of copper in cobalt were constructed using an electron probe micro analyzer. The high magnetic field increased the volume diffusivity of cobalt in copper, but had no evident effect on the grain-boundary diffusivity of copper in cobalt, irrespective of the magnetic field direction. An Arrhenius plot of the cobalt volume diffusivity in copper demonstrated that the applied high magnetic field enhanced diffusion by changing the frequency factor rather than the activation energy; this can be attributed to the increased diffusion entropy caused by changing the vacancy concentration, which resulted from the introduction of magnetization under a high magnetic field.

Multimodal Nanoscopic Study of Atomic Diffusion and Related Localized Optoelectronic Response of WS2/MoS2 Lateral Heterojunctions

The atomic diffusion in transition metal dichalcogenides (TMDs) van der Waals heterojunctions (HJs) strongly modifies their optoelectronic properties in the nanoscale. However, probing such localized properties challenges the spatial resolution and the sensitivity of a variety of analytic tools. Herein, a multimodal nanoscopy (based on tip enhanced Raman spectroscopy (TERS) and photoluminescence (TEPL)) combined with the Kelvin probe force microscopy (KPFM) method was used to probe such nanoscale localized optoelectronic properties induced by atomic diffusion. Chemical vapor deposition (CVD)-grown lateral bilayer (2L) WS₂/MoS₂ HJs were imaged with a spatial resolution better than 40 nm via TERS and TEPL mapping by using intrinsic Raman and photoluminescence (PL) peaks. The contact potential difference (CPD), capacitance, and PL variation in a nanoscale vicinity of the HJ interface can be correlated to the local stoichiometry variation determined by TERS. The diffusion coefficients of W and Mo were obtained to be ∼0.5 × 10^-12 and ∼1 × 10^-12 cm²/s, respectively, by using Fick's second law. The obtained results would be useful to further understand the localized optoelectronic response of the TMDs HJs.

Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements

For a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.

PdPt Alloy Nanocatalysts Supported on TiO2 : Maneuvering Metal-Hydrogen Interactions for Light-Driven and Water-Donating Selective Alkyne Semihydrogenation

Low power consumption and minimal potential hazards are ultimate goals for the modern development of chemical manufacturing; however, it often reduces the selectivity of chemical reactions by implementing a new reaction system. A nanocatalyst design is reported for achieving efficient and selective alkyne semihydrogenation through the photocatalytic hydrogen transfer from water, which avoids the use of a heat source and explosive H₂ . The PdPt catalytic sites that are implemented on the TiO₂ photocatalyst hold the key to achieving both high activity and selectivity. As compared with pure Pd or Pt, the alloy cocatalysts can better harness H diffusion/desorption for selective semihydrogenation as well as suppress competitive H₂ evolution. This work opens up new possibilities for green and selective alkyne semihydrogenation and highlights the importance of lattice engineering to catalytic selectivity.

Recrystallization of highly-mismatched Be(x)Zn(1-x)O alloys: formation of a degenerate interface

We investigate the effect of thermally induced phase transformations on a metastable oxide alloy film, a multiphase Be(x)Zn(1-x)O (BZO), grown on Al2O3(0001) substrate for annealing temperatures in the range of 600-950 °C. A pronounced structural transition is shown together with strain relaxation and atomic redistribution in the annealed films. Increasing annealing temperature initiates out-diffusion and segregation of Be and subsequent nucleation of nanoparticles at the surface, corresponding to a monotonic decrease in the lattice phonon energies and band gap energy of the films. Infrared reflectance simulations identify a highly conductive ZnO interface layer (thicknesses in the range of ≈ 10-29 nm for annealing temperatures ≥ 800 °C). The highly degenerate interface layers with temperature-independent carrier concentration and mobility significantly influence the electronic and optical properties of the BZO films. A parallel conduction model is employed to determine the carrier concentration and conductivity of the bulk and interface regions. The density-of-states-averaged effective mass of the conduction electrons for the interfaces is calculated to be in the range of 0.31 m0 and 0.67 m0. A conductivity as high as 1.4 × 10(3) S · cm(-1) is attained, corresponding to the carrier concentration n(Int) = 2.16 × 10(20) cm(-3) at the interface layers, and comparable to the highest conductivities achieved in highly doped ZnO. The origin of such a nanoscale degenerate interface layer is attributed to the counter-diffusion of Be and Zn, rendering a high accumulation of Zn interstitials and a giant reduction of charge-compensating defects. These observations provide a broad understanding of the thermodynamics and phase transformations in Be(x)Zn(1-x)O alloys for the application of highly conductive and transparent oxide-based devices and fabrication of their alloy nanostructures.