Insight into the High Mobility and Stability of In2 O3 :H Film

Wide bandgap semiconductors, particularly In2 O3 :Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high-concentration oxygen vacancy (VO ) defects, the mobility of ITO is always lower than 40 cm2  V-1  s-1 . Recently, hydrogen-doped In2 O3 (In2 O3 :H) films have been proven to have high mobility (>100 cm2  V-1  s-1 ), but the origin of this high mobility is still unclear. Herein, a high-resolution electron microscope and theoretical calculations are employed to investigate the atomic-scale mechanisms behind the high carrier mobility in In2 O3 :H films. It is found that VO can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of VO , which accounts for high carrier mobility. The thermal stability and acid-base corrosion mechanism of the In2 O3 :H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In2 O3 grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2 O3 :H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.

Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (V_gs < V_th). Sharp fluctuations happen when the temperature rises with a gate voltage of V_th < V_gs < V_FB. The conductance steadily decreases with increasing temperature after increasing the gate bias to V_gs > V_FB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires.

Direct Measurement of Water-Assisted Ion Desorption and Solvation on Isolated Carbon Nanotubes

We have investigated the change in mean residence time of gaseous ions adsorbed on the surface of suspended carbon nanotube field-effect transistors (CNT-FETs) with and without native surface water layers that exists in atmospheric conditions. Devices were characterized electrically before and after dehydration by thermal, dry gas, and vacuum desiccation and in each scenario were found to have substantially higher mean ion residence times. It is proposed that water molecules native to the CNT surface in ambient conditions provide a reduction pathway for incoming gaseous ions, yielding hydronium ions (H₃O⁺). This is supported by the appearance of frequent clustered readsorption events in the presence of surface water, caused by the rapid hopping of H⁺ between the device surface and the lowest water layer, which are not present in data collected from desiccated devices. After desiccation of the device, a thermal trial was conducted to determine the adsorption energy of N₂⁺ ions on the CNT surface. This work has profound implications for our understanding of wetting in one-dimensional systems and the chemistry of ion chemisorption and solvation on the surfaces of materials in general.

Hydrogen Plasma Exposure of Monolayer MoS2 Field-Effect Transistors and Prevention of Desulfurization by Monolayer Graphene

Atomic vacancies related to structural disorder and doping variation influence carrier transport in monolayer transition-metal dichalcogenide devices. Here, we investigate the effect of hydrogen plasma exposure (HPE) on monolayer MoS₂ field-effect transistors (FETs). We observe that a 1% increase in sulfur vacancy after HPE results in incremental 0.06 eV of the Schottky barrier. Short-range scattering from the sulfur vacancies reduces the carrier mobility of monolayer MoS₂ by 2 orders of magnitude. Despite the defects and grain boundaries formed during the chemical vapor deposition and transferring process, the surface desulfurization induced by the proton exposure and thermally accelerated oxidation can be blocked by monolayer graphene cladding with a van der Waals contact distance of 2.5 Å. The material-level study indicates a promising route for a low-cost and robust fabrication of smart sensor circuits on a monolithic MoS₂ wafer, where the bare MoS₂ FETs can serve as proton sensors, with their electronic readout processed by a logic circuit of graphene-protected pristine FETs with a high on/off ratio.

Thermoelectric Property in Orthorhombic-Domained SnSe Film

Single-crystal SnSe exhibits extremely high thermoelectric properties, and fabrication of SnSe films is promising for practical application and basic research on properties. However, the high thermoelectric properties have not yet been reported in SnSe films and their thermoelectric properties and nanostructure have not yet been analyzed in detail. In the present study, a-axis-oriented epitaxial SnSe films were prepared to discuss the thermoelectric properties of the SnSe films. While the electrical conductivity of the films was orders of magnitude smaller than that in the single crystals at room temperature, surprisingly, the thermoelectric property (power factor) of the films was slightly higher than that in the single crystals at high temperatures (∼300 °C). The SnSe films contained orthorhombic domain boundaries with a spacing of several hundred nanometers. The orthorhombic domain boundaries caused carrier scattering and degraded the mobility of the films at room temperature, but their effect decreased with increasing temperature. Thus, the carrier scattering at domain boundaries results in characteristic temperature dependence of thermoelectric properties in the SnSe films. High thermoelectric properties at high temperatures were successfully achieved in the SnSe films in spite of the existence of domain boundaries, demonstrating the possibility of high-performance of SnSe thermoelectric films.

Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire

Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal-organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO₂, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.

Carrier Scattering at Alloy Nanointerfaces Enhances Power Factor in PEDOT:PSS Hybrid Thermoelectrics

This work demonstrates the first method for controlled growth of heterostructures within hybrid organic/inorganic nanocomposite thermoelectrics. Using a facile, aqueous technique, semimetal-alloy nanointerfaces are patterned within a hybrid thermoelectric system consisting of tellurium (Te) nanowires and the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (

PEDOT

PSS). Specifically, this method is used to grow nanoscale islands of Cu1.75Te alloy subphases within hybrid

PEDOT

PSS-Te nanowires. This technique is shown to provide tunability of thermoelectric and electronic properties, providing up to 22% enhancement of the system's power factor in the low-doping regime, consistent with preferential scattering of low energy carriers. This work provides an exciting platform for rational design of multiphase nanocomposites and highlights the potential for engineering of carrier filtering within hybrid thermoelectrics via introduction of interfaces with controlled structural and energetic properties.