A Systematic Study of the Factors Affecting the Surface Quality of Chemically Vapor-Deposited Diamond during Chemical and Mechanical Polishing

Diamond surfaces must be of high quality for potential use in semiconductors, optical windows, and heat conductivity applications. However, due to the material's exceptional hardness and chemical stability, it can be difficult to obtain a smooth surface on diamond. This study examines the parameters that can potentially influence the surface quality of chemically vapor-deposited (CVD) diamonds during the chemical and mechanical polishing (CMP) process. Analysis and experimental findings show that the surface quality of polished CVD diamonds is significantly influenced by the crystal structure and the growth quality of the diamond. In particular, when the surface roughness is below Ra 20 nm, the pores and grain boundaries on CVD diamond obstruct surface roughness reduction during mechanical polishing. To obtain a smooth polished surface, careful consideration of the size of diamond abrasives and polishing methods is also a prerequisite. Chemical mechanical polishing is a novel method to achieve a surface quality with roughness below Ra 3 nm, as in this method, the anisotropy of the CVD diamond allows the uneven steps to be efficiently erased. However, the chemical actions of polishing slurry should be controlled to prevent the formation of chemical etching pits.

Triple Synergism Effect of Ammonium Nitrilotriacetate on the Chemical Mechanical Polishing Performance of Ruthenium Barrier Layers

As the feature size of integrated circuits continues to decrease, ruthenium (Ru) has been suggested as the successor to traditional Ta/TaN bilayers for barrier layer materials due to its unique properties. This research delves into the effects of ammonium nitrilotriacetate (NTA(NH4 )3 ) on the chemical mechanical polishing (CMP) performance of Ru in H2 O2 -based slurry. The removal rate (RR) of Ru surged from 47 to 890 Å min-1 , marking an increase of about 17 times. The essence of this mechanism lies in the triple synergistic effects of NTA(NH4 )3 in promoting ruthenium (Ru) removal: 1) The interaction betweenNH 4 + ${\mathrm{NH}}_{\mathrm{4}}^{\mathrm{+}}$ from NTA(NH4 )3 and SiO2 abrasives; 2) The chelating action of [(NH4 )N(CH2 COO)3 ]2-  from NTA(NH4 )3 on Ru and its oxides; 3) The ammoniation and chelation of Ru and its oxides byNH 4 + ${\mathrm{NH}}_{\mathrm{4}}^{\mathrm{+}}$ from NTA(NH4 )3 , which enhance the dissolution and corrosion of oxidized Ru, making its removal during the barrier layer CMP process more efficient through mechanical means. This research introduces a synergistic approach for the effective removal of Ru, shedding light on potential applications of CMP in the field of the integrated circuits.

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Polyamines have become important chemical components used in several integrated circuit manufacturing processes, such as etching, chemical mechanical polishing (CMP), and cleaning. Recently, researchers pointed out that polyamines can be excellent enhancers in promoting the material removal rate (MRR) of Si CMP, but the interaction mechanism between the polyamines and the silicon surface has not been clarified. Here, the micro-interaction mechanisms of polyamines, including ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), and pentaethylenehexamine (PEHA), with the Si(1, 0, 0) surface were investigated through molecular dynamics (MD) simulations using the ReaxFF reactive force field. Polyamines can adsorb onto the Si(1, 0, 0) surface, and the adsorption rate first accelerates and then tends to stabilize with the increase in the quantity of -CH2CH2NH-. The close connection between the adsorption properties of polyamines and the polishing rate has been confirmed by CMP experiments on silicon wafers. A comprehensive bond analysis indicates that the adsorption of polyamines can stretch surface Si-Si bonds, which facilitates subsequent material removal by abrasive mechanical wear. This work reveals the adsorption mechanism of polyamines onto the silicon substrate and the understanding of the MRR enhancement in silicon CMP, which provides guidance for the design of CMP slurry.

Nanoscale Surface Refinement of CoCrMo Alloy for Artificial Knee Joints via Chemical Mechanical Polishing

In this study, we address the challenge of surface roughness in CoCrMo alloys, typically used in artificial knee joints, which can initiate a cascade of biological responses causing inflammation, osteolysis, joint instability, and increased susceptibility to infection. We propose the application of a chemical mechanical polishing (CMP) technique, using an ecologically responsible slurry composed of 4 wt% SiO2, 0.3 wt% H2O2, 1.0 wt% glycine, and 0.05 wt% benzotriazole. Our innovative approach demonstrated significant improvements, achieving a material removal rate of 30.9 nm/min and reducing the arithmetic mean roughness from 20.76 nm to 0.25 nm, thereby enhancing the nanoscale surface quality of the artificial knee joint alloy. The smoother surface is attributed to a decrease in corrosion potential to 0.18 V and a reduction in corrosion current density from 9.55 µA/cm2 to 4.49 µA/cm2 with the addition of BTA, evidenced by electrochemical tests. Furthermore, the preservation of the phase structure of the CoCrMo alloy, as confirmed by XRD analysis and elemental mapping, ensures the structural integrity of the treated surfaces. These outcomes and our simulation results demonstrate the effectiveness of our CMP method in engineering surface treatments for artificial knee joints to optimize friction behavior and potentially extend their lifespans.

Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing

Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective.

Polymer Nanoparticles Applied in the CMP (Chemical Mechanical Polishing) Process of Chip Wafers for Defect Improvement and Polishing Removal Rate Response

Chemical mechanical planarization (CMP) is a wafer-surface-polishing planarization technique based on a wet procedure that combines chemical and mechanical forces to fully flatten materials for semiconductors to be mounted on the wafer surface. The achievement of devices of a small nano-size with few defects and good wafer yields is essential in enabling IC chip manufacturers to enhance their profits and become more competitive. The CMP process is applied to produce many IC generations of nanometer node, or those of even narrower line widths, for a better performance and manufacturing feasibility. Slurry is a necessary supply for CMP. The most critical component in slurry is an abrasive particle which affects the removal rates, uniformity, defects, and removal selectivity for the materials on the wafer surface. The polishing abrasive is the source of mechanical force. Conventional CMP abrasives consist of colloidal silica, fume silica or other inorganic polishing particles in the slurries. We were the first to systematically study nanoparticles of the polymer type applied in CMP, and to compare traditional inorganic and polymer nanoparticles in terms of polishing performance. In particular, the polymer nanoparticle size, shape, solid content dosing ratio, and molecular types were examined. The polishing performance was measured for the polishing removal rates, total defect counts, and uniformity. We found that the polymer nanoparticles significantly improved the total defect counts and uniformity, although the removal rates were lower than the rates obtained using inorganic nanoparticles. However, the lower removal rates of the polymer nanoparticles are acceptable due to the thinner film materials used for smaller IC device nodes, which may be below 10 nm. We also found that the physical properties of polymer nanoparticles, in terms of their size, shape, and different types of copolymer molecules, cause differences in the polishing performance. Meanwhile, we used statistical analysis software to analyze the data on the polishing removal rates and defect counts. This method helps to determine the most suitable polymer nanoparticle for use as a slurry abrasive, and improves the reliability trends for defect counts.

Synthesis, Characterization, and Polishing Properties of a Lanthanum Cerium Fluoride Abrasive

One kind of lanthanum cerium fluoride abrasive was prepared using the raw materials Ce₂(CO₃)₃, La·Ce(CO₃)₃, and NH₄F at temperatures of 400-1050 °C. The combined techniques of X-ray diffraction with Rietveld refinements, scanning electron microscopy, and X-ray photoelectron spectroscopy were employed to characterize the products. It was found that the materials are all made up of agglomerated irregular block-shaped particles with particle sizes in micrometer ranges. Below 850 °C, the product is a mixture of cubic CeO₂ and trigonal LaF₃, while above 900 °C, it is a mixture of cubic CeO₂ and tetragonal LaOF. A higher calcination temperature suppresses the formation of the LaF₃ phase but enhances the LaOF phase. The Ce in the prepared material is present in mixed states of Ce³⁺ and Ce⁴⁺, and the Ce⁴⁺/Ce³⁺ ratio increases with increasing calcination temperature. When the material prepared at 900 °C was used in the polishing test on K9 glass, the obtained polishing surface is very clean and flat, and the thickness difference before and after grinding is moderate, indicating its potential as an abrasive for polishing the surface of optical glass.

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.

Research on Chemical Mechanical Polishing Technology for Zirconium-Based Amorphous Alloys

Crystallization often occurs in the processing of amorphous alloys, causing the materials lose their excellent properties. The study adopts chemical mechanical polishing of amorphous alloys, presenting the effect of the rotational speed of the polishing turntable, size of abrasive, polishing pressure, and oxidant concentration. The Taguchi method is used to find the best processing parameters, and AFM is used to characterize the machined material surface. At the same time, XPS is used to detect the change of oxide film composition with the addition of oxidant. The results indicate the optimum process parameters: rotational speed of the polishing turntable is 75 r/min, polishing pressure is 28.3 kPa, the size of abrasive is 0.5 μm, and the size of abrasive is a significant factor affecting surface roughness Sa. In addition, as the size of abrasive increases, the material removal rate increases while the surface roughness Sa increases. At pH 10, with an abrasive particle size of 0.5 μm, as the H₂O₂ concentration increases, the MRR first rapidly decreases at 0.21 wt.% H₂O₂, and then gradually increases, while the Sa decreases. Furthermore, with the addition of oxidant, the main composition of the surface oxide film changes from oxide to hydroxide, and the contents of Zr⁴⁺ and Cu⁰/Cu¹⁺ elements increase. The findings can provide a feasible chemical mechanical polishing process for zirconium-based amorphous alloys to obtain a satisfactory polishing effect.

Dispersion and Polishing Mechanism of a Novel CeO2-LaOF-Based Chemical Mechanical Polishing Slurry for Quartz Glass

Quartz glass shows superior physicochemical properties and is used in modern high technology. Due to its hard and brittle characteristics, traditional polishing slurry mostly uses strong acid, strong alkali, and potent corrosive additives, which cause environmental pollution. Furthermore, the degree of damage reduces service performance of the parts due to the excessive corrosion. Therefore, a novel quartz glass green and efficient non-damaging chemical mechanical polishing slurry was developed, consisting of cerium oxide (CeO₂), Lanthanum oxyfluoride (LaOF), potassium pyrophosphate (K₄P₂O₇), sodium N-lauroyl sarcosinate (SNLS), and sodium polyacrylate (PAAS). Among them, LaOF abrasive showed hexahedral morphology, which increased the cutting sites and uniformed the load. The polishing slurry was maintained by two anionic dispersants, namely SNLS and PAAS, to maintain the suspension stability of the slurry, which makes the abrasive in the slurry have a more uniform particle size and a smoother sample surface after polishing. After the orthogonal test, a surface roughness (S_a) of 0.23 nm was obtained in the range of 50 × 50 μm², which was lower than the current industry rating of 0.9 nm, and obtained a material removal rate (MRR) of 530.52 nm/min.

CMP Pad Conditioning Using the High-Pressure Micro-Jet Method

In this study, in order to improve and restore the performance of the polishing pads and reduce the cost of chemical mechanical polishing, three types of material polishing pads, namely, polyurethane, damping cloth, and non-woven fabric, were selected for the experiment. Accordingly, each polishing pad was set up with diamond conditioner and high-pressure micro-jet (HPMJ) conditioning control experiments. Subsequently, the fluctuation ranges of the material removal rate on the three polishing pads were 2.73-3.75 μm/h, 1.38-1.99 μm/h, and 2.36-4.32 μm/h, respectively under the HPMJ conditioning method, while the fluctuation ranges of the material removal rate on the three polishing pads were 1.80-4.14 μm/h, 1.02-2.09 μm/h, and 1.78-5.88 μm/h under the diamond conditioning method. Comparing the polishing pad morphologies under SEM, we observed that the surface of the polishing pad after HPMJ conditioning was relatively clean, and the hole structure was not blocked. Contrastingly, there remained numerous abrasive particles on the surface after the conventional diamond conditioning and the hole structure was blocked. Thus, the HPMJ conditioning technology is better than the traditional diamond conditioning technology. Subsequently, the polishing pad after HPMJ conditioning has a longer service life and a more stable material removal rate than that after traditional diamond conditioning.

Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics

The efficient removal of epitaxially grown materials from their host substrate has a pivotal role in reducing the cost and material consumption of III-V solar cells and in making flexible thin-film devices. A multilayer epitaxial lift-off process is demonstrated that is scalable in both film size and in the number of released films. The process utilizes in-built, individually engineered epitaxial strain in each film to tailor the bending without the need for external layers to induce strain. Even without external support layers, the films retain good integrity after the lift-off, as evidenced by photoluminescence measurements. The films can be further processed into devices, demonstrated here with the fabrication of cm-scale solar cells using a three-layer lift-off process. Based on the included cost analysis, the solar cells are fabricated with a facile two-step process from the as-released films. The scalable multilayer lift-off process is highly cost-efficient and enables a 4-to-6-fold reduction in the cost with respect to the single-layer epitaxial lift-off process. The results are therefore significant for III-V photovoltaics and any other technologies that rely on thin-film III-V semiconductors.

Numerical Analysis of the Effect of Retaining Ring Structure on the Chemical Mechanical Polishing Abrasive Motion State

Optimizing the retaining ring structure can improve the quality of Chemical Mechanical Polishing (CMP). This study establishes a two-dimensional Computational Fluid Dynamics-Discrete Element Method (CFD-DEM) model, while the model is validated by experiments. The results graphically demonstrate the influence of the retaining ring groove design on the motion of the slurry abrasive particles. The size of the retaining ring groove appears to have a threshold value, above which the abrasives start to have significant distribution in the wafer region. As the groove size continues to increase, the number of abrasives entering the ring increases abruptly and oscillates at specific nodes. The abrasive transfer rate increases with the number of grooves in the early stage but reaches a limit at a certain number of grooves. Meanwhile, the retaining ring position affects the transfer of the abrasives. This study provides a base for optimizing the design of retaining rings.

The Effects of Precursors on the Morphology and Chemical Mechanical Polishing Performance of Ceria-Based Abrasives

Ceria-based abrasives are widely used in precision chemical mechanical polishing (CMP) fields, such as thin film transistor liquid crystal display (TFT-LCD) glass substrates and integrated circuits, because of their excellent physicochemical properties. Rare earth carbonates, as precursors of ceria-based abrasives, directly affect the morphology of ceria-based abrasives, which, in turn, affects the material removal rate (MRR) and the surface roughness (R_a) after polishing. Herein, rare earth carbonates with different morphologies were obtained by adjusting reaction parameters during precipitation, including flake, spindle, and spheroid. Moreover, the phase of precursors was analyzed, and the evolution process of morphology from precursors to ceria-based abrasives was investigated. Furthermore, the effect of precursors on the polishing performance of ceria-based abrasives was explored. The results show that the primary particles of ceria-based abrasives are near-spherical, but the morphology and dispersion of the secondary particles are obviously inherited from precursors. Among them, near-spherical ceria-based abrasives prepared by nearly monodisperse near-spherical precursors show better uniformity and higher dispersion, and they not only achieve the lowest R_a but also obtain a higher MRR of 555 nm/min (9 wt.%) for polishing TFT-LCD glass substrates. The result is significant for the further optimization and application of high-performance ceria-based abrasives.

Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

An integration technology for wafer-level LiNbO₃ single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO₃ single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO₃ can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO₃ single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO₃ single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

Atom-by-Atom and Sheet-by-Sheet Chemical Mechanical Polishing of Diamond Assisted by OH Radicals: A Tight-Binding Quantum Chemical Molecular Dynamics Simulation Study

Ultraflat and damage-free single-crystal diamond is a promising material for use in electronic devices such as field-effect transistors. Diamond surfaces are conventionally prepared by the chemical mechanical polishing (CMP) method, although the CMP efficiency remains a critical issue owing to the extremely high hardness of diamond. Recently, OH radicals have been demonstrated to be potentially useful for improving the CMP efficiency for diamond; however, the underlying mechanisms are still elusive. In this work, we applied our previously developed CMP-specialized tight-binding quantum chemical molecular dynamics simulator to comprehensively elucidate the CMP mechanisms of diamond assisted by OH radicals. Our simulation results indicate that the diamond surface is oxidized by reactions with OH radicals and then a concomitant surface reconstruction takes place due to the distorted and unstable nature of the oxidized diamond surface structure. Furthermore, we interestingly reveal that the reconstruction of the diamond surface ultimately leads to two distinct removal mechanisms: (i) gradual atom-by-atom removal through the desorption of gaseous molecules (e.g., CO₂ and H₂CO₃) and (ii) drastic sheet-by-sheet removal through the exfoliation of graphitic ring structures. Hence, we propose that promoting the oxidation-induced graphitization of the diamond surface may provide a route to further improving the CMP efficiency.

Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304)

Fluidized bed machining (FBM) is used for the surface finishing or cleaning of complex 3D machine parts. FBM is a process of injecting air into a chamber to encourage particles into a fluid-like state. Subsequently, FBM involves rotating the specimen at high speed to process the surface of the material. However, owing to the long processing time involved in FBM, there is a limit to its application in various industries. In this paper, we propose a fluidized bed chemical mechanical polishing (FB-CMP) process, wherein the material removal mechanism of chemical mechanical polishing (CMP) is applied to FBM to improve the processing efficiency of FBM. An FB-CMP system was prepared, and preliminary experiments on the chemical solution were conducted using stainless steel 304 (SS304) plates. In the experiment, hydrogen peroxide (H₂O₂) was used as the oxidant, oxalic acid (C₂H₂O₄) was used as the complexing agent and alumina (Al₂O₃) was used as the abrasive particle. The material removal rate (MRR) and roughness reduction rate during the FB-CMP of SS304 were dependent on the composition of the chemical solution. The experimental results revealed the highest MRR and roughness reduction rate at 0.33 wt % H₂O₂ and 0.2 wt % oxalic acid. To stabilize the proposed FB-CMP process, it is necessary to examine the chemical solutions of various materials.

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.

Evaluation of Chemical Mechanical Polishing-Based Surface Modification on 3D Dental Implants Compared to Alternative Methods

Chemical mechanical polishing (CMP) has been introduced in previous studies as a synergistic technique to modify the surface chemistry and topography of titanium-based implants to control their biocompatibility. In this study, the effectiveness of CMP implementation on titanium-based implant surface modification was compared to machined implants, such as baseline and etching and biphasic calcium phosphate (BCP) particle-based sand blasting treatments, in terms of the surface chemical and mechanical performance. Initially, a lab-scale 3D CMP technique was developed and optimized on commercial dental implant samples. The mechanical competitiveness of the dental implants treated with the selected methods was examined with the Vickers microhardness test as well as pull-out force and removal torque force measurements. Furthermore, the surface structures were quantified through evaluation of the arithmetic mean roughness parameter (Ra). Subsequently, the surface chemistry changes on the treated implants were studied as wettability by contact angle measurement, and surface passivation was evaluated through electrochemical methods. In each evaluation, the CMP treated samples were observed to perform equal or better than the baseline machined implants as well as the current method of choice, the BCP treatment. The ability to control the surface topography and chemistry simultaneously by the use of CMP technique is believed to be the motivation for its adaptation for the modification of implant surfaces in the near future.

Superconductivity in planarised nanocrystalline diamond films

Chemical vapour deposition (CVD) grown boron-doped nanocrystalline diamond (B-NCD) is an attractive material for the fabrication of high frequency superconducting nanoelectromechanical systems (NEMS) due to its high Young's modulus. The as-grown films have a surface roughness that increases with film thickness due to the columnar growth mechanism. To reduce intrinsic losses in B-NCD NEMS it is crucial to correct for this surface roughness by polishing. In this paper, in contrast to conventional polishing, it is demonstrated that the root-mean-square (RMS) roughness of a 520 nm thick B-NCD film can be reduced by chemical mechanical polishing (CMP) from 44.0 nm to 1.5 nm in 14 hours without damaging the sample or introducing significant changes to the superconducting transition temperature, [Formula: see text], thus enabling the use of B-NCD films in the fabrication of high quality superconducting NEMS.

Atomistic Mechanisms of Chemical Mechanical Polishing of a Cu Surface in Aqueous H2O2: Tight-Binding Quantum Chemical Molecular Dynamics Simulations

We applied our original chemical mechanical polishing (CMP) simulator based on the tight-binding quantum chemical molecular dynamics (TB-QCMD) method to clarify the atomistic mechanism of CMP processes on a Cu(111) surface polished with a SiO2 abrasive grain in aqueous H2O2. We reveal that the oxidation of the Cu(111) surface mechanically induced at the friction interface is a key process in CMP. In aqueous H2O2, in the first step, OH groups and O atoms adsorbed on a nascent Cu surface are generated by the chemical reactions of H2O2 molecules. In the second step, at the friction interface between the Cu surface and the abrasive grain, the surface-adsorbed O atom intrudes into the Cu bulk and dissociates the Cu-Cu bonds. The dissociation of the Cu-Cu back-bonds raises a Cu atom from the surface that is mechanically sheared by the abrasive grain. In the third step, the raised Cu atom bound to the surface-adsorbed OH groups is removed from the surface by the generation and desorption of a Cu(OH)2 molecule. In contrast, in pure water, there are no geometrical changes in the Cu surface because the H2O molecules do not react with the Cu surface, and the abrasive grain slides smoothly on the planar Cu surface. The comparison between the CMP simulations in aqueous H2O2 and pure water indicates that the intrusion of a surface-adsorbed O atom into the Cu bulk is the most important process for the efficient polishing of the Cu surface because it induces the dissociation of the Cu-Cu bonds and generates raised Cu atoms that are sheared off by the abrasive grain. Furthermore, density functional theory calculations show that the intrusion of the surface-adsorbed O atoms into the Cu bulk has a high activation energy of 28.2 kcal/mol, which is difficult to overcome at 300 K. Thus, we suggest that the intrusion of surface-adsorbed O atoms into the Cu bulk induced by abrasive grains at the friction interface is a rate-determining step in the Cu CMP process.

Silica based polishing of {100} and {111} single crystal diamond

Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square and 0.31 to 0.09 nm rms for {100} and {111} samples respectively was observed.